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SSM3K122TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K122TU
Power Management Switch Applications High-Speed Switching Applications
* * 1.5 V drive Low ON-resistance: Ron = 304 m (max) (@VGS = 1.5 V) Ron = 211 m (max) (@VGS = 1.8 V) Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V)
2.00.1
Unit: mm
2.10.1 1.70.1 0.650.05 +0.1 0.3-0.05 3 0.1660.05
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 10 2.0 4.0 800 500 150 -55~150 Unit V V
1 2
mW C C
0.70.05
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on a FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2 )
Note:
UFM JEDEC JEITA TOSHIBA
1: Gate 2: Source 3: Drain 2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristics Drain-Source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF Test Condition ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = - 10 V VDS = 20 V, VGS = 0 V VGS = 10 V, VDS = 0 V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 1.0 A ID = 1.0 A, VGS = 4.0 V ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS = 1.8 V ID = 0.3 A, VGS = 1.5 V Min 20 12 0.35 2.6 Typ. 5.2 87 112 147 182 195 35 29 3.4 2.3 1.1 8.0 9.0 -0.85 Max 1 1 1.0 123 161 211 304 -1.2 Unit V A A V S
Drain-Source ON-resistance
(Note 3) (Note 3) (Note 3) (Note 3) (Note 3)
m
Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on time Switching time Turn-off time Drain-Source forward voltage
VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID= 2.0 A VGS = 4 V VDD = 10 V, ID = 0.5 A, VGS = 0 to 2.5 V, RG = 4.7 ID = -2.0 A, VGS = 0 V (Note 3)
pF
nC
ns V
Note 3: Pulse test
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SSM3K122TU
Switching Time Test Circuit
(a) Test Circuit (b) VIN
OUT IN 0V RG 10 s VDD = 10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 2.5 V 90%
2.5 V 0
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Marking
3
Equivalent Circuit (top view)
3
KKC
1 2 1 2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM3K122TU
4
ID - VDS
10 V 4.0 V 2.5 V Common Source Ta = 25 C 1.8 V 10 Common Source VDS = 3 V
ID - VGS
(A)
ID
ID Drain current
2 1.5 V
(A)
0.1 Ta = 100 C 0.01 - 25 C 0.001 25 C VGS = 1.2 V 0 0.2 0.4 0.6 0.8 1 0.0001 0
3
1
Drain current
1
0
1.0
2.0
Drain-source voltage
VDS
(V)
Gate-source voltage
VGS
(V)
RDS (ON) - VGS
500 ID =1.0A Common Source Ta = 25C 500 Ta = 25C
RDS (ON) - ID
Common Source
Drain-source ON-resistance RDS (ON) (m)
300
Drain-source ON-resistance RDS (ON) (m)
400
400
300 1.5 V 200 1.8 V 2.5 V 100 VGS = 4.0 V
200 25 C 100 - 25 C 00 2 4 6 8 10 Ta = 100 C
00
1
2
3
4
Gate-source voltage
VGS
(V)
Drain current
ID
(A)
RDS (ON) - Ta
400 1.0
Vth - Ta
Common Source
Vth (V)
Common Source
VDS = 3V ID = 1 mA
Drain-source ON-resistance RDS (ON) (m)
300
0.3 A / 1.5 V
Gate threshold voltage
200
0.5 A / 1.8 V 1.0 A / 2.5 V
0.5
100
ID = 1.0 A / VGS = 4.0 V
0 -50
0
50
100
150
0 -50
0
50
100
150
Ambient temperature
Ta
(C)
Ambient temperature
Ta
(C)
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SSM3K122TU
IDR - VDS
10 Common Source VGS = 0 V 1 G D IDR
(S)
10 Common Source Ta = 25C 3 VDS = 3 V
|Yfs| - ID (A) Drain reverse current IDR
Forward transfer admittance
Yfs
1
0.1
S Ta =100 C 25 C
0.3
0.01
-25 C 0.1 0.01 0.1 1 10 0.001 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Drain current
ID
(A)
Drain-source voltage
VDS
(V)
C - VDS
1000
1000
t - ID
Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 C RG = 4.7
(ns)
500
(pF)
300 Ciss
toff 100 tf
C
Capacitance
100
Switching time
t
50 30 Common Source Ta = 25C f = 1 MHz VGS = 0 V 10 0.1 1 10 Coss Crss
10
ton tr
100
1 0.01
0.1
1
10
Drain-source voltage
VDS
(V)
Drain current
ID
(A)
Dynamic Input Characteristic
10 Common Source ID = 2.0 A 8 Ta = 25C
Gate-Source voltage
VGS
6 VDD=10V 4 VDD=16V 2 0 0 2 4 6 8 10
(V)
Total Gate Charge
Qg
(nC)
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SSM3K122TU
t - ID Transient thermal impedance Rth (C/W)
600 1000
PD - Ta Drain power dissipation PD (mW)
c
a: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) b: Mounted on a ceramic board 2 (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm )
800
100
b a
b
600 a 400
10
1 0.001 0.01
Single Pulse a: Mounted on a ceramic board 2 (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) b: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3)
200
0.1
1
10
100
600
0 -40
-20
0
20
40
60
80
100 120 140 160
Pulse width
tw
(s)
Ambient temperature
Ta
(C)
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SSM3K122TU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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