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MP4009
TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
MP4009
High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching
Industrial Applications Unit: mm
* * * * *
Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C) High collector current: IC (DC) = -5 A (max) High DC current gain: hFE = 1000 (min) (VCE = -3 V, IC = -3 A) Complementary to MP4003
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating -100 -100 -5 -5 -8 -0.1 2.0 Unit V V V A A W
JEDEC JEITA TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
PT Tj Tstg
4.0 150 -55 to 150
W C C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Array Configuration
R1 R2 1 10
2
4
6
8
3
5
7
9
R1 5 k, R2 120
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MP4009
Thermal Characteristics
Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit
Rth (j-a)
31.3
C/W
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = -100 V, IE = 0 A VCE = -100 V, IB = 0 A VEB = -5 V, IC = 0 A IC = -1 mA, IE = 0 A IC = -30 mA, IB = 0 A VCE = -3 V, IC = -0.5 A VCE = -3 V, IC = -3 A IC = -3 A, IB = -12 mA IC = -3 A, IB = -12 mA VCE = -3 V, IC = -0.5 A VCB = 50 V, IE = 0 A, f = 1MHz Output 10 Min -0.3 -100 -100 1000 1000 3 Typ. 40 Max -10 -10 -2.0 -2.0 -2.5 Unit A A mA V V
Saturation voltage
V MHz pF
Transition frequency Collector output capacitance
Turn-on time
ton Input
IB2 IB1
0.5
IB2
Switching time
Storage time
IB1
tstg
VCC = -30 V
3.0
s
20 s Fall time tf -IB1 = IB2 = 12 mA, duty cycle 1% 2.0
Marking
MP4009
JAPAN
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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MP4009
IC - VCE
-8 -100 -30 Common -15 emitter Ta = 25C -8 Common emitter VCE = -3 V
IC - VBE
(A)
-7 -6 -3 -4 -1 -2 IB = -0.3 mA 0 0 0 -2 -4 -6 -8 -10
(A) Collector current IC
-6 -4
Collector current IC
-2
Ta = 100C
25
-55
0 0
-0.8
-1.6
-2.4
-3.2
-4.0
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE (V)
hFE - IC
10000 5000 Ta = 100C 25 Common emitter VCE = -3 V -2.8
VCE - IB
Common emitter Ta = 25C
DC current gain hFE
3000
VCE (V)
-2.4
1000 500 300
Collector-emitter voltage
-55
-2.0
-8 -7 -6 -5 -4 -3 -2 -1 IC = -0.1 A
-1.6
-1.2
100 50 -0.05 -0.1
-0.8
-0.3
-1
-3
-10
-30
Collector current IC
(A)
-0.4 -0.1
-0.3
-1
-3
-10
-30
-100 -300 -500
Base current IB (mA)
VCE (sat) - IC
-10 -10 Common emitter -5 -3 IC/IB = 250 Common emitter
VBE (sat) - IC
Base-emitter saturation voltage VBE (sat) (V)
Collector-emitter saturation voltage VCE (sat) (V)
-5 -3
IC/IB = 250
Ta = -55C 25 100
-1
Ta = -55C
-1
-0.5 -0.3 -0.1
100
25
-0.5 -0.3 -0.1
-0.3
-1
-3
-10
-0.3
-1
-3
-10
Collector current IC
(A)
Collector current IC
(A)
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MP4009
rth - tw
300
Transient thermal resistance rth (C/W)
Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width.
(4)
(1)
(3) (2)
30
10
3
1
0.3 0.001
-No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
Safe Operating Area
-30 8
PT - Ta
(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board
-10 -5
IC max (pulsed)* 10 ms* 1 ms* 100 s*
PT (W) Total power dissipation
6
(A)
-3
4
(4) (3) (2) Circuit board
Collector current IC
-1 -0.5 -0.3
2 (1)
0 0
40
80
120
160
200
Ambient temperature Ta (C)
-0.1 *: Single nonrepetitive pulse Ta = 25C VCEO max -30 -100 -200
-0.05 Curves must be derated linearly with increase in temperature. -0.03 -1 -3 -10
Collector-emitter voltage VCE (V)
Tj - PT
160
Junction temperature increase Tj (C)
(1) 120
(2)
(3)
(4)
80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 1 2 3 4 5
0 0
Total power dissipation
PT
(W)
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MP4009
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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