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| Bulletin I27294 12/06 IRKDS201/045P SCHOTTKY RECTIFIER Description/ Features The IRKDS201.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. 175C TJ operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability UL pending TOTALLY LEAD-FREE, RoHS Compliant (3) (1) 100 Amp ~ + (2) Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 s sine VF TJ @ 100Apk, TJ=125C range Values 100 45 8600 0.65 - 55 to 175 Units A V A V C Outline TO-240AA www.irf.com 1 IRKDS201/ 045P Bulletin I27295 12/06 Voltage Ratings Parameters VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) IRKDS201/045P 45 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current (Per Leg) Per Module Per Leg Values 200 100 8600 1850 270 20 Units A Conditions 50% duty cycle @ TC = 120 C, rectangular wave form 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied Max. Peak One Cycle Non-Repetitive A mJ A TJ = 25 C, IAS = 24 Amps, L = 1mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) Values Units 0.7 0.92 0.65 0.86 V V V V mA mA pF nH V @ 100A @ 200A @ 100A @ 200A TJ = 25 C Conditions TJ = 25 C TJ = 125 C VR = rated VR IRM CT LS VINS Max. Reverse Leakage Current (1) Max. Junction Capacitance Typical Series Inductance RMS isolation voltage (1 sec) 10 90 5200 7.0 10000 3500 TJ = 125 C VR = 5VDC (test signal range 100Khz to 1Mhz) 25C From top of terminal hole to mounting plane 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 500s dv/dt Max. Voltage Rate of Change V/ s (Rated VR) Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range Values -55 to 175 -55 to 175 0.6 0.1 Units C C Conditions RthJC Max. Thermal Resistance, Junction to Case (Per Leg) RthCS Max. Thermal Resistance, case to Heatsink wt T Approximate Weight Mounting Torque 10% Case Style to heatsink busbar C/W DC operation C/W Mounting Surface, smooth and greased 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC 2 www.irf.com IRKDS201/ 045P Bulletin I27294 12/06 1000 Reverse Current - IR (mA) 1000 175C 100 125C 10 1 0.1 0.01 0.001 5 10 15 20 25 30 35 40 45 Tj = 175C Instantaneous Forward Current - IF (A) 25C 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10000 10 Tj = 125C Junction Capacitance - CT (pF) Tj = 25C Tj = 25C 1 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 1 1000 0 10 20 30 40 50 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (C/W) D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 1E+01 www.irf.com 3 IRKDS201/ 045P Bulletin I27295 12/06 180 Allowable Case Temperature (C) Average Power Loss - (Watts) 100 Square wave (D=0.50) 80% rated Vr applied 160 140 120 100 80 60 40 20 0 0 50 100 see note (2) 80 60 40 20 0 180 120 90 60 30 DC DC RMS Limit 150 200 250 300 0 30 60 90 120 150 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 10000 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 1000 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L HIGH-S PEED S CH WIT FREE-WHEEL DIODE 40HF L40S 02 + DUT IR P460 F R = 25 ohm g Vd = 25 Volt CURR ENT MONIT OR Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKDS201/ 045P Bulletin I27294 12/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 KD 2 - S 3 20 4 1 5 / 045 6 P 7 International Rectifier Circuit Configuration KC = Add-A-Pak - 2 diodes in Series S = Schottky Diode Average Rating (x10) Product Silicon Identification Voltage Rating (045 = 45V) Lead-Free www.irf.com 5 IRKDS201/ 045P Bulletin I27295 12/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/06 6 www.irf.com |
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