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| IPW50R140CP CoolMOSTM Power Transistor Features * Worldwide best R DS ,on in TO220 * Lowest figure of merit RON x Qg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Pb-free lead plating; RoHS compliant * Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: * Hard & soft switching SMPS topologies * CCM PFC for ATX, Notebookadapter & PDP and LCD TV * PWM for ATX, Notebook adapter, PDP and LCD TV Type IPW50R140CP Package PG-TO247 Marking 5R140P Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.140 48 V nC PG-TO247 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque P tot T j, T stg M3 and M3.5 screws T C=25 C T C=25 C I D=9.3 A, V DD=50 V I D=9.3 A, V DD=50 V Value 23 15 56 616 0.93 9.3 50 20 30 192 -55 ... 150 60 W C Ncm A V/ns V mJ Unit A Rev. 1.01 page 1 2007-02-06 IPW50R140CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 14 56 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.65 62 K/W T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) V DS=V GS, I D=0.93 mA V DS=500 V, V GS=0 V, T j=25 C V DS=500 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=14 A, T j=25 C V GS=10 V, I D=14 A, T j=150 C Gate resistance RG f =1 MHz, open drain 500 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 2 A - 20 0.13 100 0.14 nA - 0.32 2.2 Rev. 1.01 page 2 2007-02-06 IPW50R140CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 2540 110 110 - pF V GS=0 V, V DS=0 V to 400 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=14 A, R G=12.2 230 35 14 80 8.0 ns Q gs Q gd Qg V plateau V DD=400 V, I D=14 A, V GS=0 to 10 V - 11 15 48 5.2 64 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=14 A, T j=25 C - 0.9 300 5.6 26 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. I SDI D, di /dt 200A/s, VDClink=400V, Vpeak 3) 4) 5) 6) Rev. 1.01 page 3 2007-02-06 IPW50R140CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 200 180 160 140 10 120 100 s 1 102 limited by on-state resistance 10 s 1 s 1 ms P tot [W] I D [A] 100 80 60 40 20 0 0 25 50 75 100 125 150 175 DC 10 ms 100 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z(thJC)=f(tp); parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 75 20 V 10 V 60 0.5 8V 7V Z thJC [K/W] 0.2 45 10-1 I D [A] 0.1 6V 0.05 0.02 0.01 single pulse 30 5.5 V 15 5V 4.5 V 10 -2 0 10-4 10-3 10-2 10-1 100 0 5 10 15 20 10-5 t p [s] V DS [V] Rev. 1.01 page 4 2007-02-06 IPW50R140CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 50 20 V 10 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 0.8 7V 0.7 6.5 V 10 V 40 8V 6V 7V 0.6 R DS(on) [] 30 I D [A] 5.5 V 0.5 5.5 V 6V 20 5V 0.4 10 4.5 V 0.3 0 0 5 10 15 20 25 0.2 0 10 20 30 40 50 60 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=14 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.35 100 0.3 80 25 C 0.25 R DS(on) [] 60 0.2 98 % I D [A] 40 typ 150 C 0.15 0.1 20 0.05 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 1.01 page 5 2007-02-06 IPW50R140CP 9 Typ. gate charge V GS=f(Q gate); I D=14 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 C, 98% 120 V 150 C, 98% 8 150 C 400 V 25 C 101 6 V GS [V] 4 100 2 I F [A] 0 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=9.3 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 700 580 600 560 500 540 E AS [mJ] 400 V BR(DSS) [V] 25 75 125 175 520 300 500 200 480 100 460 0 440 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 1.01 page 6 2007-02-06 IPW50R140CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 100000 105 12 10000 104 Ciss 9 E oss [J] 1000 103 C [pF] Coss 6 100 102 3 10 101 Crss 0 101 0 0 100 200 300 400 500 0 100 200 300 400 500 V DS [V] V DS [V] Rev. 1.01 page 7 2007-02-06 IPW50R140CP Definition of diode switching characteristics Rev. 1.01 page 8 2007-02-06 IPW50R140CP PG-TO247-3-1: Outlines Dimensions in mm/inches Rev. 1.01 page 9 2007-02-06 IPW50R140CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 10 2007-02-06 |
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