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Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Hochstzulassige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It value Isolations Prufspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125C Tvj= 25C Tc= 80C Tc= 25C tp= 1ms, Tc= 80C Tc= 25C; Transistor VCES IC, nom IC ICRM Ptot VGES IF IFRM 1200 800 1200 1600 V A A A
3,9
kW
+/- 20
V
800
A
1600
A
It
140
k As
RMS, f= 50Hz, t= 1min.
VISOL
2,5
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sattigungsspannung collector emitter satration voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current IC= 800A, VGE= 15V, Tvj= 25C, IC= 800A, VGE= 15V, Tvj= 125C, IC= 32mA, VCE= VGE, Tvj= 25C, VGE= -15V...+15V; VCE=...V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VGE= 0V, Tvj= 25C, VCE= 1200V VCE= 0V, VGE= 20V, Tvj= 25C VCEsat VGE(th) QG Cies Cres ICES IGES min. 5 typ. 1,7 2 5,8 max. 2,15 t.b.d. 6,5 V V V
-
7,7
-
C
-
57
-
nF
-
2,7
-
nF
-
-
5
mA
-
-
400
nA
prepared by: MOD-D2; Mark Munzer approved: SM TM; Christoph Lubke
date of publication: 2002-07-30 revision: 2.0
1 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
IC= 800A, VCC= 600V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load)
VGE=15V, RGon=3,3W, T vj=25C VGE=15V, RGon=3,3W, T vj= 125C
min. td,on tr
typ. 0,60 0,66
max. s s
IC= 800A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load)
VGE=15V, RGon=3,3W, T vj=25C VGE=15V, RGon=3,3W, T vj= 125C
-
0,23 0,22
-
s s
IC= 800A, VCC= 600V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load)
VGE=15V, RGoff =0,39W, T vj=25C VGE=15V, RGoff =0,39W,T vj= 125C
td,off
-
0,82 0,96
-
s s
IC= 800A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulindiktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25C
VGE=15V, RGoff =0,39W, T vj=25C VGE=15V, RGoff =0,39W,T vj= 125C
tf
-
0,15 0,18 160
-
s s mJ
IC= 800A, VCC= 600V, Ls= 90nH
VGE=15V, RGon=3,3W, T vj= 125C
Eon Eoff ISC LsCE RCC/EE
-
IC= 800A, VCC= 600V, Ls= 90nH
VGE=15V, RGoff =0,39W, T vj= 125C
-
125
-
mJ
tP 10s, VGE 15V, TVj 125C VCC= 900V, VCEmax= VCES - LsCE * cdi/dtc
-
3200
-
A
-
20
-
nH
-
0,18
-
mW
Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF= IC, nom, VGE= 0V, Tvj= 25C IF= IC, nom, VGE= 0V, Tvj= 125C IF=IC,nom, -diF/dt= 3600A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Sperrverzogerungsladung recoverred charge IF=IC,nom, -diF/dt= 3600A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Ausschaltenergie pro Puls reverse recovery energy IF=IC,nom, -diF/dt= 3600A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C Erec 9 24 mJ mJ Qr 37 90 C C IRM 260 400 A A VF 2,2 2 2,8 V V
2 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Thermische Eigenschaften / thermal properties
min. Innerer Warmewiderstand thermal resistance, junction to case Transistor, DC, pro Modul / per module Transistor, DC, pro Zweig / per arm Diode/Diode, DC, pro Modul / per module Diode/Diode, DC, pro Zweig / per arm Ubergangs Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Modul / per module pro Zweig/ per arm; Paste/lgrease =1W/m*K l RthCK Tvj max Tvj op Tstg RthJC typ. 0,006 0,012 max. 0,016 0,032 0,032 0,064 150 K/W K/W K/W K/W K/W K/W C
-40
-
125
C
-40
-
125
C
Mechanische Eigenschaften / mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. Anschlusse terminal connection torque Schraube / screw M5 M 4,25 Al2O3
32
mm
20
mm
>400
-
5,75
Nm
Anschlusse / terminal M4
M
1,7
-
2,3
Nm
Anschlusse / terminal M8 Gewicht weight
M
8
-
10
Nm
G
1500
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Ausgangskennlinie (typisch) output characteristic (typical)
1600 1400 1200 1000 IC [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 VCE [V] 2,0
Tvj = 25C Tvj = 125C
IC= f(VCE) VGE= 15V
2,5
3,0
3,5
Ausgangskennlinienfeld (typisch) output characteristic (typical)
1600 1400
Vge=19V
IC= f(VCE) Tvj= 125C
1200 1000 IC [A] 800 600 400 200 0 0,0 0,5
Vge=17V Vge=15V Vge=13V Vge=11V Vge=9V
1,0
1,5
2,0
2,5 VCE [V]
3,0
3,5
4,0
4,5
5,0
4 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Ubertragungscharakteristik (typisch) transfer characteristic (typical)
1600 1400
Tvj=25C
IC= f(VGE) VCE= 20V
1200 1000 IC [A] 800 600 400 200 0 5 6
Tvj=125C
7
8
9 VGE [V]
10
11
12
13
Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical)
1600 1400
Tvj = 25C
IF= f(VF)
1200 1000 IF [A] 800 600 400 200 0
Tvj = 125C
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 VF [V]
DB_FF800R12KE3_2.0.xls 2002-07-30
5 (8)
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Schaltverluste (typisch) Switching losses (typical)
500 450 400 350 300 E [mJ] 250 200 150 100 50 0 0 200 400 600
Eon Eoff Erec
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
VGE=15V, Rgon=3,3W, Rgoff=0,39W, VCE=600V, Tvj=125C
800 IC [A]
1000
1200
1400
1600
Schaltverluste (typisch) Switching losses (typical)
500 450 400 350 E [mJ] 300 250 200 150 100 50 0 0 2 4 6 8
Eon Eoff Erec
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE=15V, IC=800A, VCE=600V, Tvj=125C
10
12 RG [W]
14
16
18
20
22
24
6 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Transienter Warmewiderstand Transient thermal impedance
0,1
ZthJC = f (t)
ZthJC [K/W]
0,01
Zth : IGBT Zth : Diode
0,001 0,001
0,01
0,1 t [s]
1
10
i ri [K/kW] : IGBT ti [s] : IGBT ri [K/kW] : Diode ti [s] : Diode
1 13,45 6,897E-01 18,37 4,452E-01
2 16,12 5,634E-02 20,16 7,451E-02
3 1,83 2,997E-02 21,17 2,647E-02
4 0,60 3,820E-03 4,30 2,850E-03
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
1800 1600 1400 1200 IC [A] 1000 800 600 400 200 0 0 200 400 600
IC,Chip IC,Chip
VGE=15V, T vj=125C
800
1000
1200
1400
VCE [V]
DB_FF800R12KE3_2.0.xls 2002-07-30
7 (8)
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12KE3
vorlaufige Daten preliminary data
Gehausemae / Schaltbild Package outline / Circuit diagram
8 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Terms & Conditions of Usage
Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact".

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