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2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV)
2SK3799
Switching Regulator Applications
Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 1.0 (typ.) : |Yfs| = 6.0 S (typ.) Unit: mm
Low leakage current : IDSS = 100A (max) (VDS = 720 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 8 24 50 1080 8 5 150 -55~150 Unit V V V A A W mJ A mJ C C
1. Gate 2. Drain 3. Source
Pulse (Note 1)
Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
-- SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit C / W C / W 1
2
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 30.9 mH, RG = 25, IAR = 8 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3799
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ID = 4 A RL = 100 VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VGS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min -- 30 -- 450 2.0 -- 3.5 -- -- -- -- Output -- 65 -- ns -- 20 -- Typ. -- -- -- -- -- 1.0 6.0 2200 45 190 25 Max 10 -- 100 -- 4.0 1.3 -- -- -- -- -- pF Unit A V A V V S
VGS Turn-on time Switching time Fall time tf ton
10 V 0V 4.7
VDD 400 V
Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff Qg Qgs Qgd
Duty 1%, tw = 10 s
-- --
120 60 34 26
-- -- -- -- nC
VDD 400 V, VGS = 10 V, ID = 8 A
-- --
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V dlDR / dt = 100 A / S Test Condition -- -- Min -- -- -- -- -- Typ. -- -- -- 1700 23 Max 8 24 -1.7 -- -- Unit A A V ns C
Marking
K3799
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10 6 5.5 6 5.25 20 COMMON SOURCE Tc = 25C PULSE TEST
ID - VDS
15
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
8
16 10 12 15
6
4
5
8
5.5
4.75 2 VGS = 4.5 V
4
5 VGS = 4.5 V
0
0
2
4
6
8
10
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
20
VDS - VGS
20
DRAIN CURRENT ID (A)
16
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE VDS = 20 V PULSE TEST
16
COMMON SOURCE Tc = 25C PULSE TEST
12
25
12 ID = 8 A 8
8 100 4 Tc = -55C
4
4 2
0
0
2
4
6
8
10
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yfs - ID
100
RDS (ON) - ID
10 COMMON SOURCE
FORWARD TRANSFER ADMITTANCE Yfs (S)
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE VDS = 20 V PULSE TEST
Tc = 25C PULSE TEST
VGS = 10 V 1
10 Tc = -55C 25 100
1 0.1
1
10
100
0.1
1
10
100
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
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2SK3799
RDS (ON) - Tc
5
IDR - VDS
100
4
DRAIN REVERSE CURRENT IDR (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE VGS = 10 V PULSE TEST
COMMON SOURCE Tc = 25C PULSE TEST
10
3 ID = 8 A 2 4 2
1
10 5 3 1 VGS = 0 V -0.8 -1.2 -1.6
1
0 -80
-40
0
40
80
120
160
0.1
0
-0.4
CASE TEMPERATURE
Tc (C)
DRAIN-SOURCE VOLTAGE VDS (V)
C - VDS
10000 Ciss 5
Vth - Tc
Vth (V) GATE THRESHOLD VOLTAGE
(pF)
4
1000
CAPACITANCE C
Coss 100 Crss 10
3
2
COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 100
1
1 0.1
0 -80
COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST -40 0 40 80 120 160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE
Tc (C)
PD - Tc
80 500
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE ID = 8 A Tc = 25C PULSE TEST 20
PD (W)
400
16
60
DRAIN POWER DISSIPATION
300 200 200 VGS 100
100 VDS = 400 V
12
40
8
20
4
0 0
40
80
120
160
0 0
20
40
60
80
0 100
CASE TEMPERATURE
Tc (C)
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
VDS
(V)
2SK3799
rth - tw
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 PDM t
0.01
0.01
SINGLE PULSE
T Duty = t/T Rth (ch-c) = 2.5C/W
0.001 10
100
1
10
100
1
10
PULSE WIDTH tw
(s)
SAFE OPERATING AREA
100 ID max (PULSE) * 100 s * 10 ID max (CONTINUOUS) 1 ms * 2000
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
1600
DRAIN CURRENT ID (A)
1200
1 DC OPERATION Tc = 25C 0.1 * SINGLE NONPETITIVE PULSE Tc = 25C VDSS max 1000 10000
800
400
Curves must be derated linearly 0.01 1 with increase in temperature. 10 100
0 25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
DRAIN-SOURCE VOLTAGE VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
TEST CIRCUIT RG = 25 VDD = 90 V, L = 30.9 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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