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| 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Preliminary Specifications FEATURES: * High Gain: - Typically 29 dB gain across 2.4-2.5 GHz - Typically 29-26 dB gain across 4.9-5.8 GHz * High linear output power: - >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz - Meets 802.11b OFDM ACPR requirement up to 23.5 dBm across 2.4-2.5 GHz - Meets 802.11g OFDM ACPR requirement up to 23 dBm across 2.4-2.5 GHz - Added EVM ~4% up to 19 dBm for 54 Mbps 802.11g signal across 2.4-2.5 GHz - >24 dBm P1dB across 4.9-5.8 GHz - Meets 802.11a OFDM ACPR requirement up to 22.5 dBm across 4.9-5.8 GHz - Added EVM ~4% up to 18 dBm for 54 Mbps 802.11a signal across 4.9-5.8 GHz * High power-added efficiency/Low operating current for 802.11a/b/g applications - ~160 mA @ POUT = 19 dBm for 802.11g - ~235 mA @ POUT = 23.5 dBm for 802.11b - ~270 mA @ POUT = 18 dBm for 802.11a * Built-in Ultra-low IREF power-up/down control - IREF < 2 mA * High-speed power-up/down - Turn on/off time (10%-90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +85C across 2.4-2.5 GHz - ~3/1 dB gain/max linear power variation between 0C to +85C across 4.9-5.8 GHz - 0.5 dB detector variation between 0C to +85C * Low shut-down current (< 2 A) * 20 dB dynamic range on-chip power detection * Built-in input/output matching * Packages available - 16-contact LGA package (4mm x 4mm) * All non-Pb (lead-free) devices are ROHS compliant. APPLICATIONS: * * * * * * WLAN (IEEE 802.11a/g/b) Japanese WLAN HyperLAN2 Multimedia Home RF Cordless phones PRODUCT DESCRIPTION The SST13LP05 is a fully matched, dual-band power amplifier module (PAM) based on the highly-reliable InGaP/ GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/off control interfaces. The SST13LP05 provides stable RF and power detector performance over a large VCC power supply variation, with an ultra-low shut-down current. With a near-zero Rest of Bill of Materials (RBOM), the SST13LP05 is designed for 802.11a/b/g applications covering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for U.S., European, and Japanese markets. The SST13LP05 has excellent linearity, typically 4% added Error Vector Magnitude (EVM) at 19 dBm output power. This output power is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm and 802.11b spectrum mask at 23.5 dBm. For 802.11a operation, the SST13LP05 typically demonstrates <4% added EVM at 18 dBm output power while meeting 802.11a spectrum mask at 22.5 dBm. The SST13LP05 also has wide-range (>20 dB), temperature-stable (0.5 dB across 0C to +85C), directionallycoupled, power detectors which provide a reliable and costeffective solution to board-level power control. The device's analog on/off control can be driven by an analog or digital control signal from either a transceiver or baseband chip. These features, coupled with low operating current, make the SST13LP05 ideal for the final stage power amplification in both battery-powered 802.11a/b/g WLAN transmitters and access point applications. The SST13LP05 is offered in a 16-contact LGA package. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications FUNCTIONAL BLOCKS VREG_LB VCC_LB 14 16 15 13 Det_LB NC NC RFIN_LB RFIN_HB NC 1 2 3 4 Bias Network 12 NC 11 RFOUT_LB 10 RF OUT_HB Bias Network 9 NC 5 VREG_HB 6 7 VCC_HB 8 Det_HB NC 1318 B1.0 FIGURE 1: Functional Block Diagram (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 2 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications PIN ASSIGNMENTS VREG_LB VCC_LB 16 NC RFIN_LB RFIN_HB NC 15 14 13 12 NC 1 Top View 2 3 4 5 VREG_HB (contacts facing down) Det_LB NC 11 RFOUT_LB 10 RFOUT_HB 9 NC RF and DC GND 0 6 NC 7 VCC_HB 8 Det_HB 1318 P1.1 FIGURE 2: Pin Assignments for 16-contact LGA (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 3 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND NC RFIN_LB RFIN_HB NC VREG_HB NC VCC_HB DET_HB NC RFOUT_HB RFOUT_LB NC DET_LB VCC_LB NC VREG_LB Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Power Supply No Connection Power Supply PWR No Connection Power Supply Power Supply No Connection O PWR No Connection Power Supply No Connection Power Supply PWR O PWR Pin Name Ground No Connection I I Type Function Ground Pad Unconnected Pin 50 Matched RF Input for Low Band, AC coupled 50 Matched RF Input for High Band, AC coupled Unconnected Pin Analog current control for High Band Unconnected Pin VCC Power Supply for High Band Detector Voltage Output for High Band Unconnected Pin O/PWR 50 Matched RF output for High Band O/PWR 50 Matched RF output for Low Band Unconnected Pin Detector Voltage Output for Low Band VCC Power Supply for Low Band Unconnected Pin Analog current control for Low Band T1.0 1318 (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 4 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC voltage and current specifications. Refer to Figures 3 through 22 for the RF performance. Absolute Maximum Stress Ratings Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability. Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V Reference Voltage (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 5 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications For 802.11b/g Operation TABLE 2: DC Electrical Characteristics Symbol VCC ICC Supply Voltage Supply Current for 802.11g, 19 dBm for 802.11b, 23.5 dBm IREG VREG Analog control current at On state Reference Voltage 2.95 160 235 2 mA mA mA V T2.0 1318 Parameter Min. 3.0 Typ 3.3 Max. 3.6 Unit V TABLE 3: AC Electrical Characteristics for Configuration Symbol FL-U G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Parameter Frequency range Small signal gain Gain variation over temperature 0C - 85C Gain flatness over any 50 MHz bandwidth Meet 11b spectrum mask Meet 11g OFDM 54 Mbps spectrum mask POUT = 19 dBm with 54Mbps 11g OFDM signal when operating at 3.3V Vcc Harmonics at POUT = 20 dBm Spurious non-harmonics at POUT = 20 dBm In/Out return loss at 50 nominal impedance 6 Min. 2.4 28 -1 -0.3 22 22 23 23 -28 4 -50 -60 29 1 0.3 Typ Max. 2.5 Unit GHz dB dB dB dBm dBm dB % dBc dBc dB T3.0 1318 (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 6 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications For 802.11a Operation TABLE Symbol VCC ICC IREG VREG Supply Voltage Supply Current for 802.11a, 18 dBm Analog control current at On state Reference Voltage 2.95 270 2 mA A V T4.1 1318 4: DC Electrical Characteristics Parameter Min. 3 Typ 3.3 Max. 3.6 Unit V TABLE 5: AC Electrical Characteristics for Configuration Symbol FL-U G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Parameter Frequency range Small signal gain across 4.9- 5.8 GHz Gain variation over temperature 0C - 85C Gain flatness over any 100 MHz bandwidth Meet 11a OFDM 54 Mbps spectrum mask POUT = 18 dBm with 54Mbps 11aOFDM signal when operating at 3.3V Vcc Harmonics at 20 dBm Min. 4.92 26 -1 -0.5 22 22.5 -28 4 -45 1 0.5 Typ Max. 5.805 Unit GHz dB dB dB dBm dB % dBc T5.1 1318 (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 7 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Typical Low Band Performance for 802.11b/g Test Conditions: VCC = 3.3V, TA = 25C, VREF = 2.95V unless otherwise noted S11 versus Frequency 0 -5 -10 -15 -20 -25 -30 0.0 0 -10 -20 S12 versus Frequency S11 (dB) S12 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) S21 versus Frequency 40 30 20 0 -5 -10 -15 -20 -25 -30 0.0 S22 versus Frequency S21 (dB) 10 0 -10 -20 -30 -40 0.0 S22 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 1318 SParmLowB.0 FIGURE 3: Low Band S-Parameters (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 8 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Test Conditions: VCC = 3.3 V, VREF = 2.95 V, 54 Mbps 802.11g OFDM signal Output Power versus Input Power 22 21 20 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz Output Power (dBm) 19 18 17 16 15 14 13 12 11 10 9 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 Input Power (dBm) 1318 F5.1 FIGURE 4: Low Band Output Power versus Input Power Power Gain versus Output Power 40 38 36 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz Power Gain (dB) 34 32 30 28 26 24 22 20 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F6.1 FIGURE 5: Low Band Power Gain versus Output Power (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 9 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Supply Current versus Output Power 200 190 180 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz Supply Current (mA) 170 160 150 140 130 120 110 100 90 80 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F7.1 FIGURE 6: Low Band Supply Current versus Output Power PAE versus Output Power 24 22 20 18 16 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz PAE (%) 14 12 10 8 6 4 2 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F8.1 FIGURE 7: Low Band PAE versus Output Power (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 10 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications EVM versus Output Power 10 9 8 7 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz EVM (%) 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F9.1 FIGURE 8: Low Band EMV versus Output Power 10 Freq = 2.412 GHz 0 -10 -20 -30 -40 -50 -60 -70 2.35 2.40 2.45 2.50 Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) 2.55 1318 F11 0 Frequency (GHz) FIGURE 9: Low Band 802.11b Spectrum Mask at 23 dBm with DC Current of 220 mA (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 11 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Test Conditions: VCC = 3.3V, VREF = 2.95V, TA = 25C, 1 Mbps 802.11b CCK Signal 10 Freq = 2.412 GHz 0 -10 -20 Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) -30 -40 -50 -60 -70 -80 2.35 2.40 2.45 2.50 2.55 1318 F12.0 Frequency (GHz) FIGURE 10: Low Band 802.11b Spectrum Mask at 23.5 dBm with DC Current of 235 mA (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 12 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Low Band Power Detector Characteristics Test Conditions: VCC = 3.3V, VREF = 2.95V, TA = 25C, 54 Mbps 802.11g OFDM Signal Detector Voltage versus Output Power 1.60 1.50 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz Detector Voltage (V) 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F10.1 FIGURE 11: Low Band Detector Voltage versus Output Power (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 13 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Typical High Band Performance for 802.11a Test Conditions: VCC = 3.3V, TA = 25C, VREF = 2.95V unless otherwise noted S11 versus Frequency 0 -5 -10 -15 -20 -25 -30 0.0 0 -10 -20 S12 versus Frequency S11 (dB) S12 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) S21 versus Frequency 40 30 20 0 -5 -10 -15 -20 -25 -30 0.0 S22 versus Frequency S21 (dB) 10 0 -10 -20 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 S22 (dB) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 1318 SParmHighB.0 FIGURE 12: High Band S-Parameters (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 14 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Test Conditions: VCC = 3.3V, VREF = 2.95V, 54 Mbps 802.11a OFDM Signal Output Power versus Input Power 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 Output Power (dBm) Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 Input Power (dBm) 1318 F17.1 FIGURE 13: High Band Output Power versus Input Power Power Gain versus Output Power 40 38 36 Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz Power Gain (dB) 34 32 30 28 26 24 22 20 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F18.1 FIGURE 14: High Band Power Gain versus Output Power (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 15 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications Supply Current versus Output Power 360 340 Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz Supply Current (mA) 320 300 280 260 240 220 200 180 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F19.1 FIGURE 15: High Band Supply Current versus Output Power PAE versus Output Power 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 9 10 Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz PAE (%) 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F20.2 FIGURE 16: High Band PAE versus Output Power (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 16 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications EVM versus Output Power 10 9 8 7 Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz EVM (%) 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F21.1 FIGURE 17: High Band EVM versus Output Power 10 0 -10 -20 -30 -40 -50 -60 -70 4.85 4.87 4.89 4.91 4.93 4.95 4.97 4.99 Amplitude (dB) Frequency (GHz) 1318 F23.0 FIGURE 18: High Band 802.11a Spectrum Mask at 4.92 GHz at Output Power 22.5 dBm with DC Current at 370 mA (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 17 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications 10 0 -10 -20 -30 -40 -50 -60 -70 5.11 5.13 5.15 5.17 5.19 5.21 5.23 5.25 1318 F24.0 Amplitude (dB) Frequency (GHz) FIGURE 19: High Band 802.11a Spectrum Mask at 5.18 GHz at Output Power 22.5 dBm with DC Current at 355 mA 10 0 -10 -20 -30 -40 -50 -60 -70 5.25 5.27 5.29 5.31 5.33 5.35 5.37 5.39 Amplitude (dB) Frequency (GHz) 1318 F25.0 FIGURE 20: High Band 802.11a Spectrum Mask at 5.32 GHz at Output Power 23 dBm with DC Current at 360 mA (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 18 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications 10 0 -10 -20 -30 -40 -50 -60 -70 5.74 5.76 5.78 5.80 5.82 5.84 5.86 5.88 Amplitude (dB) Frequency (GHz) FIGURE 21: High Band 802.11a Spectrum Mask at 5.805 GHz at Output Power 23 dBm with DC Current at 350 mA (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 19 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications High Band Power Detector characteristics Test Conditions: VCC = 3.3V, VREF = 2.95V, TA = 25C, 54 Mbps 802.11a OFDM Signal Detector Voltage versus Output Power 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 9 10 Detector Voltage (V) Freq=4.920 GHz Freq=5.180 GHz Freq=5.320 GHz Freq=5.805 GHz 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 1318 F22.2 FIGURE 22: High Band Detector Voltage versus Output Power (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 20 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications VCC_LB 1 F VREF_LB DET_LB 16 15 14 13 1 Bias Network 12 50 50 2 11 RFIN_LB 50 RFOUT_LB 50 RFIN_HB 3 4 10 RFOUT_HB Bias Network 9 5 6 7 8 VREF_HB DET_HB 1 F VCC_HB 1318 app_cir 1.1 FIGURE 23: Typical Application Circuit (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 21 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications PRODUCT ORDERING INFORMATION SST13LP SSTXXLP 05 XX - MLC - XXX F X Environmental Attribute F1 = non-Pb contact (lead) finish Package Modifier C = 16 leads Package Type ML = LFLGA Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 3 = 2.4 GHz / 5 GHz Dual-Band Product Line 1 = SST Communications 1. Environmental suffix "F" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST13LP05 SST13LP05-MLCF SST13LP05 Evaluation Kits SST13LP05-MLCF-K Note: Consult your SST sales representative to confirm availability of valid combinations. (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 22 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications TOP VIEW SIDE VIEW BOTTOM VIEW See notes 1 and 2 Pin #1 Laser Engraved Pin #1 2.7 0.075 4.00 0.10 2.7 0.65 BSC 4.00 0.10 1.40 1.20 0.39 0.35 0.0684 BSC4 1mm Note: 1. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 2. The external paddle is electrically connected to the die back-side and should be soldered to the VSS of the PC board. Connection of this paddle to any other voltage potential will result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target values. 4. Land set back from body edge applies to all lands of package. 5. All linear dimensions are in millimeters (max/min). 16-LGA-4x4-MLC-0.0 FIGURE 24: 16-contact Low-profile, Fine-pitch, Land Grid Array (LFLGA) SST Package Code: MLC TABLE 6: Revision History Revision 00 Description Date Dec 2006 * Initial release of data sheet. (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 23 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP05 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales and Marketing Offices NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Country Manager 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101, Taiwan, R.O.C. Tel: +886-2-8698-1168 Fax: +886-2-8698-1169 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Director, Field Applications Engineering Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Kiyomi Akaba Country Manager 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: kakaba@sst.com Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2006 Silicon Storage Technology, Inc. S71318-00-000 12/06 24 |
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