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MT4S102T
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S102T
UHF-SHF Low Noise Amplifier Application
Unit:mm 1.20.05
FEATURES
* * Low Noise Figure :NF=0.58dB (@f=2GHz) 1.20.05 High Gain:|S21e|2=16.0dB (@f=2GHz)
0.90.05
Marking
4 3
P8
1 2
0.520.05
1. Collector 2. Emitter 3. Base 4. Emitter TESQ
Rating 6 3 1.2 20 10 60 150 -55~150 Unit V V V mA mA mW C C
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
JEDEC JEITA TOSHIBA Weight: 0.0015 g
2-1G1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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0.120.05
0.80.05
3
4
1
2
MT4S102T
Microwave Characteristics (Ta = 25C)
Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2)
2 2
Test Condition VCE=2V, IC=15mA, f=2GHz VCE=2V, IC=15mA, f=2GHz VCE=2V, IC=15mA, f=5.2GHz VCE=2V, IC=10mA, f=2GHz VCE=2V, IC=10mA, f=5.2GHz
Min 21 13.5
Typ. 25 16.0 9.0 0.58 1.4
Max 0.85
Unit GHz dB dB dB dB
Noise Figure
Electrical Characteristics (Ta = 25C)
Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=6V, IE=0 VEB=1V, IC=0 VCE=2V, IC=15mA VCB=2V, IE=0, f=1MHz VCB=2V, IE=0, f=1MHz (Note 1) Min 200 Typ. 0.43 0.17 Max 1 1 400 0.6 0.25 Unit A A pF pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle.
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MT4S102T
IC-VCE
25 COMMON EMITTER Ta=25 1000
IB=70A
hFE-IC
Collector-current IC(mA)
20 15 10 5 0
60A 50A 40A 30A 20A 10A 4A 0.0 1.0 2.0 3.0 4.0
DC Current Gain hFE
100
10 0.1 1
COMMON EMITTER VCE=2V Ta=25 10 100
Collector-Emitter voltage VCE(V)
Collector-current IC(mA) |S21e|2-IC
25
VCE=2V 1V
IC-VBE
100 COMMON EMITTER VCE=2V Ta=25
Insertion Gain |S21e|2(dB)
Collector-current IC(mA)
10 1 0.1 0.01 0.001
20 15 10 5 0
f=1GHz Ta=25 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
Base-Emitter voltage VBE(V) |S21e|2-IC
20
1V
Collector-current IC(mA)
fT-IC
35
VCE=2V
15
Transition Frequency fT(GHz)
Insertion Gain |S21e|2(dB)
30 25 20 15 10 5 0 1 10
VCE=2V 1V
10
5 f=2GHz Ta=25 1 10 100
0
f=2GHz Ta=25 100
Collector-current IC(mA)
Collector-current IC(mA)
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MT4S102T
Cre,Cob-VCB Reverse Transfer Capacitance Cre(pF)
0.6 IE=0 f=1MHz Ta=25 Cob 1.8 1.6 Ga
NF,Ga-IC
18 16 14 12 10 NF VCE=2V f=2GHz Ta=25 1 10 8 6 4
Output Capacitance Cob(pF)
0.4 0.3 0.2
Noise Figure NF(dB)
1.4 1.2 1.0 0.8 0.6 0.4 0.2
Cre 0.1 0.0 0.1 1 10
2 100
Collector-Base voltage VCB(V)
Collector-current IC(mA)
PC-Ta Collector Power dissipation PC(mW)
100
75 60 50
25
0 0 25 50 75 100 125 150 175
Ambient temperature Ta()
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Associated Gain Ga(dB)
0.5
MT4S102T
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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