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PD - 95595
IRFIZ46NPBF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET(R) Power MOSFET VDSS = 55V
D
G S
RDS(on) = 0.020 ID = 33A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLP AK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
33 23 180 45 0.3 20 230 16 4.5 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Min.

Typ.

Max.
3.3 65
Units
C/W
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1
07/23/04
IRFIZ46NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. 55 2.0 16 Typ. 0.017 12 80 43 52 4.5 7.5 1500 450 160 12 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.020 VGS = 10V, ID = 19A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 61 ID = 28A 13 nC VDS = 44V 24 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 28A ns RG = 12 RD = 0.98, See Fig. 10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Q rr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units 72 210 33 180 1.3 110 310 V ns nC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 19A, VGS = 0V TJ = 25C, IF = 28A di/dt = 100A/s
D
G S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25C, L = 410H
R G = 25, IAS = 28A. (See Figure 12)
ISD 28A, di/dt 240A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 300s; duty cycle 2%.
Uses IRFZ46N data and test conditions
t=60s, =60Hz
2
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IRFIZ46NPBF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
100
10
10
4.5V
4.5V
1 0.1
20s PULSE WIDTH TJ TC = 25C
1 10
A
100
1 0.1
20s PULSE WIDTH TJ TC = 175C
1 10 100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 28A
I D , Drain-to-Source Current (A)
2.0
100
TJ = 25C TJ = 175C
1.5
1.0
10
0.5
1 4 5 6 7
V DS = 25V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFIZ46NPBF
2800 2400
C, Capacitance (pF)
2000
Ciss
1600
Coss
1200
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 28A V DS = 44V V DS = 28V
16
12
8
800
Crss
400
4
0 1 10 100
A
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
100
10s
TJ = 175C TJ = 25C
10
100s
10
1ms
1 0.4 0.8 1.2 1.6
VGS = 0V
2.0
A
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms
A
100
2.4
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFIZ46NPBF
35
VDS V GS
RD
30
RG 10V
D.U.T.
+
ID , Drain Current (A)
-V DD
25 20 15 10 5 0 25 50 75 100 125 150 175
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFIZ46NPBF
L
EAS , Single Pulse Avalanche Energy (mJ)
VDS D.U.T. RG + 10 V
500
TOP
400
BOTTOM
ID 11A 20A 28A
VDD
IAS tp
0.01
300
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
200
100
0
VDD = 25V
25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFIZ46NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFIZ46NPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE
IR F I840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E COD E YE AR 9 = 1999 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
8
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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