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| 7MBR30U2A060 IGBT MODULE (U series) 600V / 30A / PIM IGBT Modules Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless ptherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rating 600 20 30 60 30 60 133 600 20 20 40 104 600 800 30 210 221 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Converter Brake Continuous 1ms 1ms 1 device Unit V V A Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute W V V A A W V V A A A 2s C C V N*m *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM VFM IRRM R B Symbol Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=30mA Tj=25C VGE=15V Tj=125C Ic=30A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=300V IC=30A VGE=15V RG=120 VGE=0V IF=30A Tj=25C Tj=125C Tj=25C Tj=125C Min. 7MBR30U2A060 Characteristics Typ. Max. 1.0 200 6.2 6.7 7.7 2.10 2.40 2.40 1.85 2.15 1.7 0.36 1.20 0.20 0.60 0.05 0.45 1.20 0.04 0.45 2.10 2.65 2.00 1.85 1.75 0.35 1.0 200 1.85 2.15 2.15 1.70 2.00 0.45 1.20 0.15 0.60 0.37 1.20 0.04 0.45 1.0 1.20 1.50 1.10 1.0 5000 465 495 520 3305 3375 3450 Characteristics Typ. Max. 0.94 1.60 1.20 1.20 0.05 Unit mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=30A VCE=600V, VGE=0V VCE=0V, VGE=20V Tj=25C IC=20A Tj=125C VGE=15V Tj=25C Tj=125C VCC=300V IC=20A VGE=15V RG=150 VR=600V IF=30A VGE=0V VR=800V T=25C T=100C T=25/50C Condition s mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value s Converter terminal chip mA V mA K Unit Item Thermistor Thermal resistance Characteristics Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 80 80 7MBR30U2A060 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip VGE=20V 15V 12V Collector current : Ic [ A ] Collector current : Ic [ A ] 60 60 VGE=20V 15V 12V 40 10V 40 10V 20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] 20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 80 Collector-Emitter voltage : VCE [ V ] 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip Collector current : Ic [ A ] 60 Tj=25C Tj=125C 8 6 40 4 Ic=60A Ic=30A Ic=15A 5 10 15 20 25 20 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 0 Gate-Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector-Emitter voltage : VCE [ V ] 10.00 Capasitance : Cies, Coes, Cres [ nF ] Cies 1.00 Coes Cres 0.10 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=30A, Tj= 25C 25 [V] 400 20 Gate - Emitter voltage : VGE 300 VGE 15 200 10 100 5 VCE 0.01 0 10 20 30 Collector-Emitter voltage : VCE [ V ] 0 0 20 40 60 80 100 120 140 0 Gate charge : Qg [ nC ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 25C 1000 Switching time : ton, tr, toff, tf [ nsec ] toff ton tr Switching time : ton, tr, toff, tf [ nsec ] 1000 7MBR30U2A060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj=125C ton toff tr 100 100 tf tf 10 0 20 40 60 Collector current : Ic [ A ] 10 0 20 40 60 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=30A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff ton tr 1000 3 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120 Eon(125C) 2 Eon(25C) Eoff(125C) 1 Eoff(25C) Err(125C) Err(25C) 0 0 20 40 60 Collector current : Ic [ A ] 100 tf 10 10 100 1000 10000 Gate resistance : Rg [ ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=30A, VGE=15V, Tj= 125C 12 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10 8 6 4 Eoff 2 0 10 100 Err 1000 10000 0 0 200 Eon Collector current : Ic [ A ] 60 80 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 120 ,Tj <= 125C 40 20 400 600 800 Gate resistance : Rg [ ] Collector-Emitter voltage : VCE [ V ] IGBT Module [ Inverter ] Forward current vs. Forward on voltage (typ.) chip 80 1000 7MBR30U2A060 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=120 Forward current : IF [ A ] 60 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 100 trr (125C) trr (25C) 40 Tj=25C Tj=125C 20 10 Irr (125C) Irr (25C) 0 0.0 1.0 2.0 3.0 4.0 Forward on voltage : VF [ V ] 1 0 20 40 60 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip 80 Forward current : IF [ A ] 60 40 Tj=125C 20 Tj=25C 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance (max.) 10.000 Thermal resistanse : Rth(j-c) [ C/W ] 100 [ Thermistor ] Temperature characteristics (typ.) FWD[Inverter] Resistance : R [ k ] 1.000 IGBT[Inverter] 10 IGBT[Brake],Conv.Diod 0.100 1 0.010 0.001 0.1 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [ C ] Pulse width : Pw [ sec ] IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 50 VGE=20V 15V 12V Collector current : Ic [ A ] 50 7MBR30U2A060 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip VGE=20V 40 15V 12V 40 Collector current : Ic [ A ] 30 10V 30 10V 20 20 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 50 Collector-Emitter voltage : VCE [ V ] 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 40 Collector current : Ic [ A ] Tj=25C 8 30 6 20 Tj=125C 10 4 Ic=40A Ic=20A Ic=10A 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10.00 Collector-Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ nF ] 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C 25 Cies 1.00 400 VGE 20 300 15 Coes 0.10 Cres 200 10 100 VCE 5 0.01 0 10 20 30 Collector-Emitter voltage : VCE [ V ] 0 0 40 80 120 Gate charge : Qg [ nC ] 0 Gate-Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR30U2A060 |
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