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 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt
ZTX552 ZTX553
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX552 -100 -80 -5 -2 -1 1 5.7
E-Line TO92 Compatible ZTX553 -120 -100 UNIT V V V A A W mW/ C C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-onn Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ZTX552 MIN. -100 -80 -5 -0.1 -0.1 -0.25 -1.1 -1.0 40 10 150 12 3-196 150 40 10 150 12 MAX. ZTX553 MIN. -120 -100 -5 -0.1 -0.1 -0.25 -1.1 -1.0 200 MHz MHz MAX. V V V
A A
UNIT
CONDITIONS. IC=-100A IC=-10mA IE=-100A VCB=-80V VCB=-100V VEB=-4V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz
Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on)
V V V
Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ZTX552 ZTX553
TYPICAL CHARACTERISTICS
-0.8
td tr ns ns 100 200 ts
IB1=IB2=IC/10
tf ts S nS 3 600
Switching time
VCE(sat) - (Volts)
-0.6 IC/IB=10 -0.4
80 160
tf
2
400
60 120
td 1 tr 200
40 80
-0.2
20 40
100
0
-0.001
0
-0.01
-0.1
-1
0 -0.01
0 -0.1 -1
0
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
hFE - Normalised Gain (%)
-1.0 80 VCE=-10V 60 IC/IB=10
VBE(sat) - (Volts)
-0.8
40
-0.6
20
-0.4
-0.001
-0.2 -0.01 -0.1 -1 -10
-0.001
-0.01
-0.1
-1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
-10 -1.2 VCE=-10V
VBE(sat) v IC
Single Pulse Test at Tamb=25C
IC - Collector Current (Amps)
VBE - (Volts)
-1.0
-1
-0.8
-0.6
-0.1
D.C. 1s 100ms 10ms 1.0ms 100s
-0.4
ZTX552
-0.0001
-0.001
-0.01
-0.1
-1 -0.01 -0.1 -1 -10
ZTX553
-100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-197


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