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| Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Transistors SOT-323 MMSTA42 FEATURES Power dissipation PCM: TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 0.2 W (Tamb=25) Collector current 0.3 A ICM: Collector-base voltage 310 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Unit: mm unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) Test conditions MIN 310 305 5 0.25 0.1 60 100 75 0.2 0.9 V V 200 MAX UNIT V V V Ic= 100A, IE=0 Ic= 1 mA, IB=0 IE= 100A, IC=0 VCB=200V, IE=0 VEB= 5V, IC=0 VCE= 10V, IC= 1mA VCE= 10V, IC=10mA VCE=10V, IC=30mA IC=20 mA, IB= 2mA IC= 20 mA, IB=2mA VCE= 20V, IC= 10mA A A DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) Transition frequency fT f=30MHz 50 MHz DEVICE MARKING MMSTA42=K3M |
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