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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 100 2.0 0.1 UNIT V V A A W V s Tmb 25 C IC = 3.0 A; IB = 0.4 A ICon = 3.0 A; IBon = 0.3 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 400 5 10 2 4 100 150 150 UNIT V V A A A A W C C Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. MAX. 1.25 60 UNIT K/W K/W March 1996 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFE PARAMETER Collector cut-off current 1 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 9.0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 3.0 A;IB = 0.4 A IC = 3.0 A;IB = 0.4 A IC = 1.0 A; VCE = 2 V IC = 3.0 A; VCE = 2 V IC = 1.0 A; VCE = 2 V MIN. 400 13 7.5 13 18 23 TYP. 0.8 21 11 - MAX. 1.0 2.0 10.0 2.0 1.3 30 20 25 30 UNIT mA mA mA V V V Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Gain bands2 (Acceptance limits) 1 2 3 DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ts tf PARAMETER Switching times resistive load Turn-off storage time Turn-off fall time Switching times inductive load ts tf ts tf Turn-off storage time Turn-off fall time Turn-off storage time Turn-off fall time CONDITIONS ICon = 3.0 A; IBon = 0.3 A; -IBoff = 0.6 A TYP. 1.5 0.5 MAX. 2.0 0.8 UNIT s s ICon = 3.0 A; IBon = 0.3 A; LB = 1 H; -VBB = 5 V ICon = 3.0 A; IBon = 0.3 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 1.0 60 1.1 120 1.2 100 1.4 250 s ns s ns 1 Measured with half sine-wave voltage (curve tracer). 2 Gain Banding. Product is divided into 3 gain bands for matching purposes. The gain band is printed on the device. All devices within a device rail will be from the same gain band. However, a box may contain rails from more than one band. Band quantities are shown on the box label. It is not possible to order specific gain bands. March 1996 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 + 50v 100-200R IC 90 % ICon 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IBon 10 % tr 30ns -IBoff tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 200 LC IBon 100 LB T.U.T. -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V;LB = 1 uH VCC ICon 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IBon 10 % tf t T -IBoff t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. March 1996 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VCEsat / V IC/IB= 12 10 8 Tj = 25 C Tj = 125 C 0 20 40 60 80 100 Tmb / C 120 140 0.1 1 IC / A 10 Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) Zth / (K/W) Fig.10. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB VBEsat / V 1.2 1.1 Tj = 25 C Tj = 125 C 10 1 D= 0.5 0.2 0.1 0.05 0.02 0 1 0.9 0.1 P D tp D= tp 0.8 0.7 T t 0.6 IC = 5A 3A 2A T 0.01 1E-06 1E-04 1E-02 t/s 1E+00 0 0.4 0.8 1.2 IB / A 1.6 2 2.4 Fig.8. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VBEsat / V 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A IC/IB= 8 10 12 10 Tj = 25 C Tj = 125 C Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC VCEsat / V 10 Tj = 25 C Tj = 125 C 5A 1 3A IC=2A 0.1 0.1 1 IB / A 10 Fig.9. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB Fig.12. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC March 1996 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 h FE 100 5V IC / A 6 5 4 1V 10 3 2 Tj = 25 C Tj = 125 C 1 0 1 0.01 0.1 IC / A 1 10 0 200 400 600 800 1000 VCE / V Fig.13. Typical DC current gain. hFE = f(IC) parameter VCE IC / A 100 Fig.15. Reverse bias safe operating area. Tj Tj max VCC = 0.01 ICMmax 10 LC tp = VCL 10 us ICmax 100 us 1 II IBon LB T.U.T. -VBB 500 us Fig.16. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V LC = 200 H; VCL 850 V; LB = 1 H 2 ms 10 ms DC I 0.1 0.01 1 10 100 1000 VCE / V Fig.14. Forward bias safe operating area. Tmb = 25C I II NB: Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. March 1996 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1996 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1996 7 Rev 1.100 This datasheet has been download from: www..com Datasheets for electronics components. |
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