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| Transys Electronics LIMITED TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1 W (Tamb=25) TRANSISTOR (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 1 A 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage 2SC1383 2SC1384 Collector-emitter breakdown voltage 2SC1383 2SC1384 Emitter-base breakdown voltage Collector cut-off current unless otherwise specified) Symbol V(BR)CBO Test conditions MIN 30 50 25 50 5 0.1 85 50 0.4 1.2 100 V V MHz 340 MAX UNIT V Ic= 10A , IE=0 IC=2mA , IB=0 IE= 10A, IC=0 VCB=20V , IE=0 VCE=10 V, IC= 500mA VCE=5 V, IC= 1A IC= 500m A, IB=50mA IC= 500mA , IB= 50mA VCE= 10 V, IC= 50mA V(BR)CEO V(BR)EBO ICBO hFE(1) V V A DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT CLASSIFICATION OF hFE(1) Rank Range Q 85-170 R 120-240 S 170-340 |
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