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| Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.650.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 6 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SD1149 x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 100 100 15 20 50 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 4U Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) NV fT Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 60V, IE = 0 VCE = 60V, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100K, Function = FLAT VCB = 10V, IE = -2mA, f = 200MHz 400 0.05 80 150 min 100 100 15 0.1 1.0 2000 0.2 V mV MHz typ max Unit V V V A A 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features +0.1 +0.1 1 Composite Transistors PT -- Ta 500 80 Ta=25C XN5553 IC -- VCE 60 VCE=10V 50 25C IC -- VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100A 80A 60A 50A 40A 30A 20A Collector current IC (mA) 400 40 Ta=75C -25C 40 30 200 20 20 10A 100 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 fT -- IE 200 1800 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) VCB=10V Ta=25C 1500 Ta=75C 1200 25C -25C Transition frequency fT (MHz) 30 100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C Forward current transfer ratio hFE 160 120 900 80 600 300 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 NV -- IC f=1MHz IE=0 Ta=25C 100 VCE=10V GV=80dB Function=FLAT Ta=25C Rg=100k 100 NV -- VCE Collector output capacitance Cob (pF) 5 Rg=100k Noise voltage NV (mV) 4 60 22k 40 5k Noise voltage NV (mV) 80 80 60 22k 40 3 2 5k 1 20 20 0 1 2 3 5 10 20 30 50 100 0 0.01 0 0.03 0.1 0.3 1 1 2 3 5 10 IC=1mA GV=80dB Function=FLAT Ta=25C 20 30 50 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector to emitter voltage VCE (V) 2 |
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