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| Composite Transistors XN4505 NPN epitaxial planer transistor Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) 2.8 -0.3 0.650.15 6 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 2.9 -0.05 1.90.1 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1-0.1 +0.2 0.95 s Features +0.2 5 2 4 3 s Basic Part Number of Element q 0.40.2 s Absolute Maximum Ratings (Ta=25C) Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 60 50 7 100 200 25 20 12 0.5 1 300 150 -55 to +150 Unit V V V mA mA V V V A A mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: DZ Internal Connection 6 5 4 Tr1 1 2 3 Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Tr2 Overall Junction temperature Storage temperature 0 to 0.05 2SD601A+2SD1328 0.1 to 0.3 0.8 0.16-0.06 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN4505 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.1 150 3.5 min 60 50 7 0.1 100 460 0.3 V MHz pF typ max Unit V V V A A s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 0.5A*1 VCE = 2V, IC = 1A*1 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 20mA VCB = 10V, IE = -50mA VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 200 60 0.13 0.4 1.2 V V MHz pF min 25 20 12 0.1 800 typ max Unit V V V A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance *1 *2 Pulse measurement Ron test circuit 1k IB=1mA f=1kHz V=0.3V Common characteristics chart PT -- Ta 500 VB VV VA Total power dissipation PT (mW) VB Ron= !1000() VA-VB 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) 2 Composite Transistors Characteristics charts of Tr1 IC -- VCE 60 Ta=25C IB=160A 50 XN4505 IB -- VBE 1200 VCE=10V Ta=25C 1000 200 240 IC -- VBE VCE=10V Collector current IC (mA) Base current IB (A) 140A 40 120A 100A 30 80A 20 60A 40A 10 20A 0 0 2 4 6 8 10 800 Collector current IC (mA) 160 600 120 Ta=75C 80 25C -25C 400 200 40 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) IC -- IB 240 VCE=10V Ta=25C 200 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 600 hFE -- IC VCE=10V 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C Forward current transfer ratio hFE 500 Collector current IC (mA) 160 400 Ta=75C 25C -25C 120 300 80 200 40 100 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base current IB (A) Collector current IC (mA) Collector current IC (mA) fT -- IE 300 VCB=10V Ta=25C Transition frequency fT (MHz) 240 180 120 60 0 -0.1 -0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE 1.2 IB=4.0mA 1.0 100 XN4505 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=25 100 VBE(sat) -- IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C -25C 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Collector current IC (A) 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 0.5mA 25C 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Collector to emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) hFE -- IC 1200 VCE=2V 400 350 300 250 200 150 100 50 0 0.01 0.03 0 -1 fT -- I E 24 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C Forward current transfer ratio hFE 1000 Transition frequency fT (MHz) 20 f=1MHz IE=0 Ta=25C 800 Ta=75C 600 25C -25C 16 12 400 8 200 4 0 -2 -3 -5 -10 -20 -30 -50 -100 0.1 0.3 1 3 10 1 2 3 5 10 20 30 50 100 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 4 |
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