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| WT4884AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 12 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D 1 3 S S 8 7 D 2 D 6 S Features: *Super high dense cell design for low RDS(ON) R DS(ON) <6 m@VGS=10V R DS(ON) <8.5 m@VGS=4.5V *Rugged and Reliable *SO-8 Package D Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value 30 Unite V V A A A W C/W C G 4 5 1 SO-8 + -20 12 44 1.7 2.5 50 -55 to 150 Device Marking WT4884AM=STM4884A http://www.weitron.com.tw WEITRON 1/6 01-Aug-05 WT4884AM Electrical Characteristics Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ 1.6 - Max 3 + -100 1 7 11 Unit V V nA uA m Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=24V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=12A VGS=4.5V, ID=10A On-State Drain Current VDS=10V, VGS=10V Forward Transconductance VDS=15V, ID=12A 30 1 - 20 rDS (on) 6 8.5 ID(on) gfs 22 - A S - Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 3150 680 510 PF Switching (3) Turn-On Delay Time VGS =10V,VDD =15V, ID=1A, RGEN=6 Rise Time VGS =10V,VDD =15V, ID=1A, RGEN=6 Turn-Off Time VGS =10V,VDD =15V, ID=1A, RGEN=6 Fall Time VGS =10V,VDD =15V, ID=1A, RGEN=6 Total Gate Charge VDS=15V, ID=12A, VGS =10V VDS=15V, ID=12A, V GS =4.5V Gate-Source Charge VDS=15V, VGS=10V, ID=12A Gate-Drain Charge VDS=15V, VGS=10V, ID=12A Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A td(on) tr td(off ) tf Qg - 27 13 127.5 55.5 - nS nS nS nS nc - - 65 30.5 11 13 0.75 Qgs Qgd 1.2 nc nc V VSD Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 3. Guaranteed by Design, not Subject to Production Testing. http://www.weitron.com.tw WEITRON 2/6 01-Aug-05 WT4884AM 20 VGS=3.5V VGS=4V VGS=10V W E IT R O N 20 15 ID, Drain Current (A) ID, Drain Current (A) 16 12 8 4 VGS=4.5V 10 125 C 5 25 C 1 0 -55 C VGS=3V VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.6 1.2 1.8 2.4 3.0 3.6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig.1 Output Characteristics Fig.2 Transfer Characteristics 4200 1.8 Ciss RDS(ON), On-Resistance (Normalized) 3500 1.6 1.4 1.2 1.0 0.8 0.6 -55 VGS=10V ID=12A C, Capacitance (pF) 2800 2100 1400 700 0 Coss Crss 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 VDS, Drain-to Source Voltage (V) Tj, Junction Temperature ( C) Fig.3 Capacitance Fig.4 On-Resistance Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 VDS=VGS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 ID=250uA 75 100 125 75 100 125 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Fig.5 Gate Threshold Variation with Temperature Fig.6 Breakdown Voltage Variation with Temperature http://www.weitron.com.tw WEITRON 3/6 01-Aug-05 WT4884AM 30 W E IT R O N 20.0 VGS=0V gFS, Transconductance (S) 24 18 12 6 0 VDS=10V 0 5 10 15 20 Is, Source-drain current (A) 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Fig.7 Transconductance Variation with Drain Current Fig.8 Body Diode Forward Voltage Variation with Source Current VGS, Gate to Source Voltage (V) ID, Drain Current (A) RD S 8 6 4 2 0 VDS=15V ID=12A 10 (O N) Li m it 10 50 1 DC 1s 10 10 m 0m s s 0.1 0.03 VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50 0 9 18 27 36 45 54 63 72 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig.9 Gate Charge Fig.10 Maximum Safe Operating Area V DD ton V IN D VGS R GEN G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% INVERTED S V IN 50% 10% 50% PULSE WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms http://www.weitron.com.tw WEITRON 4/6 01-Aug-05 WT4884AM W E IT R O N 10 r(t) ,NORMALIZED TRANSIENT THERMAL RESISTANCE 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 10 100 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE http://www.weitron.com.tw WEITRON 5/6 01-Aug-05 WT4884AM SO-8 Package Outline Dimensions Unit:mm 1 L E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 http://www.weitron.com.tw WEITRON 6/6 01-Aug-05 |
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