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| STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET IITM Power MOSFET General features Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V RDS(on) <0.010 <0.010 <0.010 ID 80A 80A 1 3 2 80A TO-220 TO-247 Exceptional dv/dt capability 100% avalanche tested Low threshold drive 3 1 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DPAK Internal schematic diagram Applications Switching application Order codes Part number STB80NF06T4 STP80NF06 STW80NF06 Marking B80NF06 P80NF06 W80NF06 Package DPAK TO-220 TO-247 Packaging Tape & reel Tube Tube September 2006 Rev 3 1/14 www.st.com 14 Contents STP80NF06 - STB80NF06 - STW80NF06 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP80NF06 - STB80NF06 - STW80NF06 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (vgs = 0) Gate- source voltage Drain current (continuos) at TC = 25C Drain current (continuos) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 60 20 80 80 320 300 2 870 - 65 to 175 175 Unit V V A A A W W/C mJ C ID IDM (2) PTOT EAS (3) Tstg Tj Single pulse avalanche energy Storage temperature Max. operating junction temperature 1. Current limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj= 25C, ID= 40A, VDD=40V Table 2. Rthj-a Tl Thermal data 0.5 62.5 300 C/W C/W C Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Rthj-case Thermal resistance junction-case Max 3/14 Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating, TC=125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 40A 2 3 Min. 60 1 10 100 4 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) 0.0065 0.010 Table 4. Symbol gfs (1) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 80A, VGS = 10V VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS = 2.5V, ID=18A Min. Typ. 20 3850 800 250 115 24 46 150 Max. Unit S pF pF pF nC nC nC Ciss Coss Crss Qg Qgs Qgd 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Table 5. Symbol td(on) tr td(off) tf td(off) tf tc Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Off-voltage Rise Time Fall Time Cross-over Time Test conditions VDD = 27V, ID = 40A RG = 4.7 VGS = 10V (see Figure 13) VDD = 27V, ID = 40A, RG = 4.7, VGS = 10V (see Figure 13) Vclamp =44V, ID =80A RG = 4.7, VGS = 10V (see Figure 15) Min. Typ. 25 85 70 25 85 75 110 Max. Unit ns ns ns ns ns ns ns 4/14 STP80NF06 - STB80NF06 - STW80NF06 Table 6. Symbol ISD ISDM VSD (1) (2) Electrical characteristics Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VGS = 0 ISD = 80A, VDD = 50V di/dt = 100A/s, Tj = 150C (see Figure 15) 80 250 6.4 Test conditions Min Typ. Max 80 320 1.5 Unit A A V ns nC A trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 5/14 Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STP80NF06 - STB80NF06 - STW80NF06 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized breakdown voltage vs tj 7/14 Test circuit STP80NF06 - STB80NF06 - STW80NF06 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/14 STP80NF06 - STB80NF06 - STW80NF06 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/14 Package mechanical data STP80NF06 - STB80NF06 - STW80NF06 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 10/14 STP80NF06 - STB80NF06 - STW80NF06 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 11/14 Package mechanical data STP80NF06 - STB80NF06 - STW80NF06 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STP80NF06 - STB80NF06 - STW80NF06 Revision history 5 Revision history Table 7. Date 09-Sep-2004 21-Jun-2005 17-Aug-2006 Revision history Revision 1 2 3 Complete version The word "STripFET" in the description title on the web was been corrected New template, no content change Changes 13/14 STP80NF06 - STB80NF06 - STW80NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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