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| VN2001L New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) 200 FEATURES VGS(th) (V) 2 to 4 rDS(on) Max (W) 1.2 @ VGS = 10 V 1.3 @ VGS = 6 V ID (A) 0.56 0.54 D TrenchFETr Power MOSFET APPLICATIONS D CRT Monitor HD Drive Circuit D H-Drive Trans Switching TO-226AA (TO-92) S 1 Device Marking Front View "S" VN 2001L xxyy "S" = Siliconix Logo xxyy = Date Code G 2 D 3 Top View Ordering Information: VN2001L-TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta L = 0 1 mH 0.1 TA= 25_C TA = 70_C TA= 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS PD RthJA TJ, Tstg Limits 200 "20 0.56 0.45 2 1.5 0.11 0.8 0.51 156 -55 to 150 Unit V A Avalanche Current Single Pulse Avalanche Energy Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. mJ W _C/W _C Document Number: 72654 S-40246--Rev. A, 16-Feb-04 www.vishay.com 1 VN2001L Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltagea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = 100 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 200 V, VGS = 0 V TJ = 55_C VDS = 10 V, VGS = 10 V VGS = 10 V, ID = 0.56 A VGS = 6 V, ID = 0.54 A VDS = 10 V, ID = 0.56A IS = 0.5 A, VGS = 0 V 1 0.95 1.0 1.8 0.8 1.2 1.2 1.3 200 2.0 3.0 4.0 "100 1 10 V nA mA A W S V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 0.5 A, di/dt = 100 A/ms VDD = 100 V, RL = 200 W ID ^ 0.5 A VGEN = 10 V 0 5 A, RG = 25 W VDS = 90 V, VGS = 10 V, ID = 0.5 A 3.6 0.8 1.2 4 5.5 10 22 18 28 10 16 40 30 45 ns W 6 nC Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.0 VGS = 10 thru 5 V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 3.5 V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72654 S-40246--Rev. A, 16-Feb-04 TJ = 125_C Transfer Characteristics 1.6 I D - Drain Current (A) 1.2 0.8 4V 0.4 I D - Drain Current (A) 4.5 V 25_C -55_C 2 VN2001L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 2.00 r DS(on) - On-Resistance ( W ) 250 Vishay Siliconix Capacitance C - Capacitance (pF) 1.60 200 Ciss 1.20 VGS = 4.5 V VGS = 10 V 150 0.80 100 0.40 50 Crss Coss 40 60 80 100 0.00 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 90 V ID = 0.56 A 8 2.2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.56 A 1.8 6 r DS(on) - On-Resistance ( W) (Normalized) 1.5 2.0 2.5 3.0 3.5 4.0 1.4 4 1.0 2 0.6 0 0.0 0.5 1.0 0.2 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 2 1 r DS(on) - On-Resistance ( W ) 4 5 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) ID = 0.56 A 3 TJ = 150_C 0.1 TJ = 25_C 0.01 2 1 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72654 S-40246--Rev. A, 16-Feb-04 www.vishay.com 3 VN2001L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 0.001 -25 0 25 50 75 100 125 150 0.1 1 10 100 1000 TJ - Temperature (_C) VDS - Drain-to-Source Voltage (V) ID = 250 mA 1 I D - Drain Current (A) 10 rDS(on) Limited IDM Limited Safe Operating Area 0.1 ID(on) Limited 100 ms 1 ms 10 ms 0.01 TA = 25_C Single Pulse BVDSS Limited 100 ms 1s dc 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 0.01 Single Pulse 0.01 10-4 10-3 10-2 10-1 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 1 10 t1 - Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72654 S-40246--Rev. A, 16-Feb-04 |
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