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VBO 40 Single Phase Rectifier Bridge IdAV = 40 A VRRM = 800-1600 V VRSM V 900 1300 1700 VRRM V 800 1200 1600 Standard Types VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 + ~ ~ - miniBLOC, SOT-227 B E72873 ~ ~ - + Symbol IdAV IdAV x IFSM Test Conditions TC = 100C TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 (diode) (module) t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 20 40 300 320 260 280 450 430 340 330 -40...+150 150 -40...+125 A A A A A A A2s A2s A2s A2s C C C V~ Features Isolation voltage 2500 V~ Planar passivated chips Low forward voltage drop q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q q q Advantages Easy to mount Space and weight savings TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA Mounting torque (M4) Terminal connection torque (M4) typ. 2500 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g M4 screws (4x) supplied Symbol IR VF VT0 rT RthJC RthCH dS dA a Test Conditions VR = VRRM; VR = VRRM; IF = 20 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 5 1.15 0.80 13 1.7 0.42 0.3 0.08 8 4 50 mA mA V V mW K/W K/W K/W K/W mm mm m/s2 Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.30 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.509 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 008 For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air z Max. allowable acceleration typ. typ. Data according to IEC 60747 and refer to a single diode unless otherwise stated x for resistive load at bridge output 0.180 21.08 (c) 2000 IXYS All rights reserved 1-2 VBO 40 80 A 70 IF 60 50 40 30 20 250 50Hz, 80% VRRM 103 TVJ=125C TVJ= 25C VR = 0 V A2s I2t A 200 IFSM TVJ = 45C 150 10 100 2 TVJ = 45C TVJ = 150C TVJ = 150C 50 10 0 0.0 0 0.001 101 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current versus voltage drop per diode 200 W 160 Ptot 120 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 50 A RthHA : 0.1 0.5 1.0 2.0 4.0 7.0 K/W K/W K/W K/W K/W K/W 40 Id(AV)M 30 80 20 40 10 0 0 10 20 30 40 50 Id(AV)M 60 A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 Power dissipation versus direct output current and ambient temperature 2.0 K/W 1.6 ZthJC Fig. 5 Max. forward current versus case temperature 1.2 Constants for ZthJC calculation: 0.8 i 1 2 3 4 5 Rthi (K/W) 0.081 0.1449 0.2982 0.735 0.441 ti (s) 0.00024 0.0036 0.0235 0.142 0.7 0.4 0.0 0.001 VBO 40 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2000 IXYS All rights reserved 2-2 |
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