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NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
* * * * SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 9 GHz HIGH COLLECTOR CURRENT: 100 mA
0.65 2.0 0.2 1.3 2 1
UPA809T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View) 2.1 0.1
1.25 0.1
6 0.2 (All Leads) 5
DESCRIPTION
The UPA809T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.
3
4
ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW C C RATINGS 9 6 2 100 110 200 150 -65 to +150 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package.
0.9 0.1 0.7 0.15 - 0.05 0 ~ 0.1
+0.10
TJ TSTG
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 1 V, IC = 3 mA Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 GHz pF dB dB 0.85 UNITS A A 80 110 9.0 0.75 6.5 1.5 0.85 MIN UPA809T S06 TYP MAX 0.1 0.1 160
Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA809T-T1, 3K per reel.
California Eastern Laboratories
UPA809T TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
100
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
50 VCE = 1 V
Total Power Dissipation, PT (mW)
Free Air
200
El
em
Collector Current, IC (mA)
2
20 10 5 2 1 0.5 0.2 0.1 0.05 0.02
en
ts
Pe
in
rE
lem
To t
al
en
t
100
0
50
100
150
0.01 0
0.5
1
Ambient Temperature, TA (C)
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
30 200 A 200
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 1 V
Collector Current, IC (mA)
180 A 160 A 20 140 A 120 A 100 A 10 80 A 60 A 40 A lB = 20 A 0 0 1 2 3 4 5 6 0.1 0.2 0.5 1 2 5 10 20 50 100
DC Current Gain, hFE
100
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
10 10
INSERTION POWER GAIN vs. COLLECTOR CURRENT
Gain Bandwidth Product, fT (GHz)
5
Insertion Power Gain, IS21eI2 (dB)
VCE = 1 V f= 2 GHz
VCE = 1 V f= 2 GHz
5
0 1 2 3 5 7 10
0 1 2 3 5 7 10
Collector Current, IC (mA)
Collector Current, IC (mA)
UPA809T TYPICAL PERFORMANCE CURVES (TA = 25C)
NOISE FIGURE vs. COLLECTOR CURRENT
3 VCE = 1 V f = 2 GHz
FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Feddback Capacitance, CRE (pF)
Noise Figure, NF (dB)
1.0
2
0.5
f = 1 GHz 1
0 1 2 3 5 7 10
0.1 1 5 10 20
Collector Current, lC (mA)
Collector to Base Voltage, VCB (V)
MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
VCE = 1 V lc = 5 mA 1.5
Maximum Available Power Gain, MAG (dB) Insertion Power Gain, IS21eI2 (dB)
VCE = 1 V lc = 5 mA
MAG
20 IS21EI 2
Noise Figure, NF (dB)
0.5 1 5
30
1
10
0 0.1
0.5 0.1 0.5 1.0 2
Frequency, f (GHz)
Frequency, f (GHz)
ORDERING INFORMATION
PART NUMBER UPA809T-T1 QUANTITY 3000 PACKAGING Tape & Reel
UPA809T BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1, Q2 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 0.06 3.5e-16 1.62 0.4 6.14 3.5 0.001 4.2 0.796e-12 0.71 0.38 0.45e-12 0.65 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1, Q2 0.48 0.56 0 0.75 0 0.75 9e-12 0.36 0.65 0.61 50 32e-12 1.11 0 3 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
(1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
UPA809T NONLINEAR MODEL SCHEMATIC
0.07 pF C_C1B2 0.1 pF CCBPKG1 LC Pin_1 0.05 nH 0.3 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.05 nH CCE1 0.19 pF LE1 0.95 nH C_E1B2 0.3 pF LB2 0.65 nH C_B1B2 0.05 pF LB 0.05 nH C_B2E2 0.05 pF LE2 0.8 nH 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 LE 0.05 nH Pin_4 Pin_5 LB 0.05 nH Pin_6
Q1
0.55 nH
C_E1C2 0.05 pF CCB2 0.3 pF
Q2
LC Pin_3 0.05 nH
MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 11/98
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM 8/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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