 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) (0.30) 6 5 4 0.20+0.05 -0.02 Unit: mm 0.100.02 1.200.05 1.600.05 For switching Features * High-speed switching * Gate protection diode built-in * Two elements incorporated into one package (Each transistor is separated) * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.000.05 1.600.05 5 Display at No.1 lead (0.20) * 2SJ0672 + 2SK3539 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Drain-source surrender voltage Gate-source voltage (Drain open) Drain current Peak drain current Tr2 Drain-source surrender voltage Gate-source voltage (Drain open) Drain current Peak drain current Overall Total power dissipation * Junction temperature Storage temperature Symbol VDSS VGSO ID IDP VDSS VGSO ID IDP PT Tch Tstg Rating 50 7 100 200 -30 7 -100 -200 125 125 -55 to +125 Unit V V mA mA V V mA mA mW C C 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) JEDEC: SOD-723 0 to 0.02 Basic Part Number 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) SSMini6-F1 Package Marking Symbol: 4T Internal Connection (D1) (G2) 6 5 (S2) 4 1 (S1) 2 3 (G1) (D2) Note) *: Measuring on substrate at 17 mm x 10 mm x 1 mm 0.10 max. 5 0.550.05 (0.20) Publication date: August 2004 SJJ00303AED 1 UP04979 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs ton toff Conditions ID = 10 A, VGS = 0 VDS = 30 V, VGS = 0 VGS = 7 V, VDS = 0 ID = 1.0 A, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Turn-on time * Min 50 Typ Max Unit V A A V mS ns ns 1.0 10 0.5 1.0 8 6 20 60 200 200 1.5 15 12 ID = 10 mA, VDS = 3.0 V VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA Turn-off time * Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to ton, toff test circuit. * Tr2 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs ton toff Conditions ID = -10 A, VGS = 0 VDS = -20 V, VGS = 0 VGS = 7 V, VDS = 0 ID = -1.0 A, VDS = -3.0 V ID = -10 mA, VGS = -2.5 V ID = -10 mA, VGS = -4.0 V Forward transfer admittance Turn-on time * Turn-off time * Min -30 Typ Max -1.0 10 Unit V A A V mS ns ns - 0.5 -1.0 25 15 -1.5 45 30 ID = -10 mA, VDS = -3.0 V VDD = -3 V, VGS = 0 V to -3 V, ID = -10 mA VDD = -3 V, VGS = -3 V to 0 V, ID = -10 mA 20 35 850 850 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to ton, toff test circuit. ton, toff test citcuit (Tr1) VOUT 470 VIN VDD = 3 V VOUT 10% 90% 100 F VGS = 3.0 V 50 10% 90% ton toff ton, toff test citcuit (Tr2) VOUT 280 VGS 100 F 10% 90% 90% 10% ton toff VGS = 0 V to -3 V 50 VDD = -3 V VOUT 2 SJJ00303AED UP04979 Common characteristics chart PT Ta 140 120 100 80 60 40 20 0 Total power dissipation PT (mW) 0 40 80 120 Ambient temperature Ta (C) Characteristics charts of Tr1 ID VDS 70 60 Ta = 25C VGS = 2.0 V 1.9 V 300 VDS = 3 V ID VGS 180 Yfs ID Forward transfer admittance |Yfs | (mS) Ta = -25C 25C 160 140 120 100 80 60 40 20 0 0 50 100 150 VGS = 3 V Ta = 25C 250 Drain current ID (mA) 50 40 30 20 10 0 Drain current ID (mA) 200 85C 150 1.8 V 1.7 V 1.6 V 100 50 1.5 V 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 200 250 Drain-source voltage VDS (V) Gate-source voltage VGS (V) Drain current ID (mA) Yfs VGS 180 VDS = 3 V 40 RDS(on) VGS Drain-source ON resistance RDS(on) () ID = 10 mA Forward transfer admittance |Yfs | (mS) 160 140 120 100 80 60 40 20 0 0 1 2 3 30 20 10 Ta = 85C 25C -25C 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) SJJ00303AED 3 UP04979 Characteristics charts of Tr2 ID VDS -120 Ta = 25C VGS = -3.50 V -3.25 V -80 -3.00 V -2.75 V -2.50 V -40 -180 -160 -140 ID VGS 70 Yfs VGS Forward transfer admittance |Yfs | (mS) 60 50 40 30 20 10 0 VDS = -3 V Ta = 25C VDS = -3 V Ta = -25C 25C -100 Drain current ID (mA) Drain current ID (mA) -120 85C -100 -80 -60 -40 -20 -60 -20 0 0 -2 -4 -6 -8 -10 -12 0 0 -2 -4 -6 0 -2 -4 -6 Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) RDS(on) VGS 50 ID = -10 mA Drain-source ON resistance RDS(on) () 40 30 20 Ta = 85C 25C 10 -25C 0 0 -2 -4 -6 Gate-source voltage VGS (V) 4 SJJ00303AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
Price & Availability of UP04979
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |