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| Small Signal Transistor Arrays UN216 Transistor array to drive the small motor s Features q q q q Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 6 elements incorporated. (SO-14) 1 6.50.3 14-0.40.1 Unit: mm 5.50.3 14 1.50.1 0.8 s Applications q q q q 0 to 0.1 0.5 6 7.70.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT* Tj Tstg (Ta=252C) Ratings 12 10 7 3 0.5 150 -55 to +150 Unit V V V A W C C 1 2 3 4 5 6 7 14 13 12 11 10 9 8 +0.1 45 0.50.2 0.2 -0.05 Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. 7 8 12 6 12 12-0.90.1 SO-14 Package Internal Connection Note: marks used above: +: NPN part, -: PNP part * TC = 25C only when the elements are active 1 Small Signal Transistor Arrays UN216 s Electrical Characteristics Parameter Collector cutoff current (Ta=252C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat)1 fT Cob VF Conditions (NPN) VCB = 10V (PNP) VCB = -10V (NPN) IC = 10A (PNP) IC = -10A (NPN) IC = 1mA (PNP) IC = -1mA (NPN) IE = 10A (PNP) IE = -10A (NPN) VCE = 1V, IC = 0.5A* (PNP) VCE = -1V, IC = - 0.5A* (NPN) IC = 2A, IB = 50mA (PNP) IC = -2A, IB = -50mA (NPN) VCB = 6V, IE = -50mA, f = 200MHz (PNP) VCB = -6V, IE = 50mA, f = 200MHz (NPN) VCB = 10V, IE = 0, f = 1MHz (PNP) VCB = 10V, IE = 0, f = 1MHz (NPN) IF = 1A (PNP) IF = -1A 150 150 50 65 1.5 1.5 12 -12 10 -10 7 -7 200 200 800 800 0.25 - 0.45 V min typ max 1 -1 Unit A Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Forward current transfer ratio Collector to emitter saturation voltage Transition frequency MHz Collector output capacitance pF Forward voltage (DC) *Pulse measurement V Characteristics charts of PNP transistor block PT -- Ta 0.6 -6 Ta=25C IC -- VCE -6 IC -- VBE VCE=-1V -5 Total power dissipation PT (W) 0.5 -5 Collector current IC (A) Collector current IC (A) 0.4 -4 -4 Ta=75C -3 25C -25C 0.3 -3 IB=-8mA -7mA -6mA 0.2 -2 -5mA -4mA -3mA -2mA -2 0.1 -1 -1mA -1 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) 2 Small Signal Transistor Arrays VCE(sat) -- IC -10 UN216 hFE -- IC Cob -- VCB VCE=-1V 320 Collector to emitter saturation voltage VCE(sat) (V) IC/IB=40 800 Collector output capacitance Cob (pF) -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -0.01 -0.03 -0.1 -0.3 Ta=75C 25C -25C Forward current transfer ratio hFE -3 700 600 500 400 300 200 100 0 -0.01 -0.03 -0.1 -0.3 Ta=75C 25C -25C 280 240 200 160 120 80 40 0 -0.1 -0.3 f=1MHz IE=0 Ta=25C -1 -3 -10 -1 -3 -10 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Characteristics charts of NPN transistor block PT -- Ta 0.6 IC -- VCE 3.0 Ta=25C 6 IC -- VBE VCE=1V 5 Total power dissipation PT (W) 0.5 2.5 Collector current IC (A) Collector current IC (A) 0.4 2.0 IB=8mA 1.5 7mA 6mA 5mA 4mA 3mA 0.5 2mA 1mA 4 Ta=75C 3 25C -25C 0.3 0.2 1.0 2 0.1 1 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=40 800 Cob -- VCB Collector output capacitance Cob (pF) VCE=1V 160 140 120 100 80 60 40 20 0 0.1 f=1MHz IE=0 Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C Forward current transfer ratio hFE 700 600 500 400 -25C 300 200 100 0 0.01 0.03 Ta=75C 25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 3 |
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