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| T R I Q U I N T S E M I C ON D U C TO R, I N C. TGA9083-EEU Power Amplifier q q q q q q q PHOTO ENLARGEMENT 6.5 to 11.5- GHz Frequency Range 9083 5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias 19-dB Typical Small Signal Gain 40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias 12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss On-Chip Active Gate Bias Circuit Option Simplifies Biasing 4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.) The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to DESCRIPTION 11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts. Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40 percent. Typical small signal gain is 1 9-dB. In balanced configuration, 12 Watts of output power is achievable with 40 % PAE. The TGA9083-EEU is fabricated using TI's 0.25um T-gate power pHEMT process. This device offer s either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . The active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency over 6.5 to 11.5 GHz mak e it a viable power amp solution in applications such as point-to-point radio , phased-array radar, and telecommunications. Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment methods as well as with thermocompression and thermosonic wire -bonding processes. The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment. Ground is provided to the circuitr y through vias to the backside metallization. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGA9083-EEU TYPICAL OUTPUT POWER 40 38 36 34 PIN = 21 dBm ID = 1.1 A TA = 30 C Pout (dBm) 32 30 28 26 24 22 20 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 Drain Voltage: 7V 8V 9V Frequency (GHz) TYPICAL POWER-ADDED EFFICIENCY 50 45 40 35 PIN = 21 dBm ID = 1.1 A TA = 30 C PAE (%) 30 25 20 15 10 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 Drain Voltage: 7V 8V 9V Frequency (GHz) TYPICAL SMALL SIGNAL GAIN 40 35 ID = 1.1 A TA = 30 C Small Signal Gain (dB) 30 25 20 15 10 5 0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 Drain Voltage: 7V 8V 9V Frequency (GHz) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 2 TGA9083-EEU TYPICAL INPUT RETURN LOSS 0 ID = 1.1 A TA = 30 C 5 Input Return Loss (dB) 10 15 20 25 Drain Voltage: 7V 8V 9V 30 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 Frequency (GHz) TYPICAL OUTPUT RETURN LOSS 0 ID = 1.1 A TA = 30 C 5 Output Return Loss (dB) 10 15 20 25 Drain Voltage: 7V 8V 9V 30 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 Frequency (GHz) TYPICAL DRAIN CURRENT 3000 2500 PIN = 21 dBm ID = 1.0 to 1.1 A TA = 30 C 2000 Id (mA) 1500 1000 Drain Voltage: 500 7V 8V 9V 0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 Frequency (GHz) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 3 TGA9083-EEU ABSOLUTE MAXIMUM RATINGS Drain supply voltage, VD ...................................................................................................................... 10 V Negative supply voltage range, VG .............................................................................................. - 5 V to 0 V Drain supply current, ID ................................................................................................................ 3.5 A Power dissipation, PD, at (or below) 25 C base-plate temperature* ........................................................ 39 W Input continuous wave power, PIN .................................................................................................. 25.5 dBm Operating channel temperature, TCH** ......................................................... ..................................... 150 C Mounting temperature (30 sec), TM .................................................................................................. 320 C Storage temperature range, TSTG ............................................................................................ - 65 to 150 C Ratings over operating channel temperature range, TCH (unless otherwise noted) Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the de vice. These are stress ratings only, and functional operation of the de vice at these or an y other conditions beyond those indicated under "RF Characteristics" is not implied. E xposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25 C base -plate temperature, derate linearly at the rate of 73 mW/ C. ** Operating channel temperature directly affects the de vice MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. 4 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGA9083-EEU TYPICAL S-PARAMETERS Frequency (GHz) 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8.0 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 S11 dB -14.31 -13.64 -13.08 -12.72 -12.36 -12.15 -11.94 -11.81 -11.71 -11.62 -11.54 -11.48 -11.46 -11.49 -11.56 -11.64 -11.84 -12.00 -12.27 -12.59 -13.03 -13.55 -14.20 -15.00 -15.96 -16.95 -18.19 -19.31 -20.44 -21.28 -21.77 -21.75 -21.45 -20.72 -19.95 -19.15 -18.33 -17.51 -16.67 -15.95 -15.23 -14.62 -13.99 -13.41 -12.87 -12.39 -11.97 -11.57 -11.21 -10.91 -10.63 ANG() -78.1 -94.1 -107.7 -118.8 -128.4 -136.9 -144.3 -151.0 -157.2 -163.0 -168.6 -174.6 179.6 173.5 167.5 161.1 154.7 148.0 140.8 133.2 124.8 115.8 106.2 95.7 84.3 72.4 59.3 45.4 29.9 14.1 -3.6 -19.6 -35.6 -48.2 -58.9 -68.3 -76.7 -84.1 -91.4 -98.1 -104.5 -110.8 -117.4 -123.9 -130.8 -137.8 -145.6 -153.5 -162.1 -171.2 179.2 S21 dB 21.77 21.69 21.42 21.09 20.74 20.40 20.12 19.88 19.69 19.55 19.48 19.44 19.45 19.51 19.61 19.75 19.93 20.16 20.41 20.67 20.93 21.18 21.39 21.56 21.67 21.72 21.71 21.63 21.49 21.30 21.07 20.81 20.52 20.24 19.95 19.67 19.38 19.11 18.86 18.61 18.37 18.13 17.89 17.65 17.42 17.17 16.93 16.64 16.34 16.00 15.63 ANG() 168.2 146.0 125.7 107.0 89.7 73.4 57.9 43.1 28.9 14.9 1.3 -12.1 -25.4 -38.6 -51.8 -65.0 -78.4 -92.1 -106.1 -120.4 -135.0 -150.0 -165.3 179.2 163.6 147.9 132.2 116.7 101.3 86.3 71.4 56.8 42.5 28.3 14.3 0.4 -13.4 -27.2 -41.1 -55.0 -69.0 -83.0 -97.2 -111.8 -126.3 -141.0 -156.2 -171.4 173.1 157.3 141.4 S12 dB -64.33 -60.56 -58.66 -57.67 -57.01 -56.72 -56.97 -57.08 -57.77 -57.76 -57.76 -57.71 -58.13 -58.49 -58.82 -58.75 -59.10 -59.09 -59.22 -58.89 -58.80 -58.78 -58.42 -58.06 -57.95 -57.57 -57.49 -57.13 -57.62 -57.57 -57.59 -57.61 -57.36 -57.08 -56.69 -56.18 -55.71 -54.67 -54.34 -53.49 -53.00 -52.35 -51.80 -51.56 -51.12 -50.77 -50.69 -50.33 -50.57 -50.76 -50.93 ANG() 88.1 81.2 70.2 59.6 48.2 37.4 28.1 20.2 11.7 4.5 -5.0 -14.8 -28.3 -39.3 -50.7 -62.5 -79.3 -95.6 -113.4 -133.1 -149.5 -170.2 173.1 152.0 133.7 114.0 93.9 77.9 59.4 40.5 20.7 3.4 -15.4 -32.3 -51.1 -64.5 -80.0 -92.3 -106.2 -119.4 -133.6 -144.6 -155.4 -166.5 -178.6 170.8 159.1 147.9 136.5 124.9 112.2 S22 dB -14.44 -14.21 -14.24 -14.50 -14.91 -15.53 -16.28 -16.99 -17.83 -18.52 -19.16 -19.83 -20.05 -20.59 -20.68 -20.89 -20.52 -19.67 -18.60 -17.09 -15.59 -14.14 -12.89 -11.82 -10.98 -10.41 -9.98 -9.83 -9.84 -10.03 -10.44 -10.91 -11.62 -12.32 -13.23 -14.16 -15.11 -16.20 -17.11 -18.22 -19.22 -20.24 -21.37 -22.33 -23.12 -23.74 -23.25 -22.17 -20.63 -18.89 -17.29 ANG() 114.4 89.3 69.1 50.1 34.3 17.3 1.9 -14.2 -30.1 -46.3 -61.9 -75.8 -88.6 -98.0 -105.8 -108.7 -109.5 -108.5 -107.9 -109.5 -112.4 -117.2 -124.4 -132.0 -141.0 -150.3 -160.1 -170.4 179.4 168.5 158.1 147.1 136.0 124.6 112.1 100.1 86.9 73.2 59.2 43.6 28.4 11.4 -7.1 -26.6 -50.8 -75.6 -104.2 -131.1 -153.4 -174.0 168.8 TA = 25 C, VD= +8 V , ID= 1.1 A Reference planes for S -parameter data include bond wires as specified in the "Recom mended Assembly Diagram." TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 5 TGA9083-EEU RF CHARACTERISTICS GP IRL ORL PAE P2dB IP3 PARAMETER TEST CONDITIONS TYP UNIT Small Signal Power Gain Input Return Loss Output Return Loss Power Added Efficiency Output Power at 2-dB Gain Compression Output Third-order Intercept Point 6.5 to 11.5 GHz 6.5 to 11.5 GHz 6.5 to 11.5 GHz 6.5 to 11.5 GHz 6.5 to 11.5 GHz 6.5 to 11.5 GHz 9 12 9 40 37 44 dB dB dB % dBm dBm VD =+7 V, ID=1.5 A, TA = 25 C unless stated THERMAL INFORMATION PARAMETER RJC Thermal resistance, channel to backside TEST CONDITIONS 25C Base, VD=9 V, ID=1.2 A, PD=6 W NOM 10 UNIT C/W EQUIVALENT SCHEMATIC -5V (opt) G1 G2 Gnd D2 active bias Q1 2.5mm resistive divider Q2 11.36mm Gnd -5V (opt) G1 G2 D2 Gnd TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 6 TGA9083-EEU RECOMMENDED ASSEMBLY DIAGRAM VG .01uF Vd 100pF 100pF 100pF RF Input RF Output 100 pF 100 pF 100 pF .01uF VG Vd Bond using three (four at RFOUT) 1.0-mil diameter, 25 to 30-mil length gold bond wires at RF Input and RF Output for optimum performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in drawing. Close placement of exter nal components is essential to stability. Gate bias ( V G ) voltage can be applied from either side of MMIC. Drain bias ( VD) voltage should be connected to both sides of MMIC. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 7 TGA9083-EEU RECOMMENDED ASSEMBLY DIAGRAM USING ACTIVE GATE BIAS CIRCUIT -5 V .01uF 100pF 100pF Vd 100pF On-chip wire bond E A B C D RF Input RF Output 100pF 100pF Vd Bond using three (four at RFOUT) 1.0-mil diameter, 25 to 30-mil length gold bond wires at RF Input and RF Output for optimum performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in dra wing. Close placement of exter nal components is essential to stability. Drain bias ( VD) voltage should be connected to both sides of MMIC. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 8 TGA9083-EEU 3 120.0 115.5 112.0 104.5 97.9 89.5 89.2 86.0 4 5 168.4 MECHANICAL DRAWING 14.5 41.7 6 110.0 A B C E D 51.5 1 2 53.5 8.1 9 5.4 0.0 7 0.0 5.9 14.5 8 169.0 178.0 41.7 9.7 Units: millimeters (inches) Thickness: 0,1016 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size +/- 0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond pad #1 pad #2 pad #3 pad #4, #7 pad #5, #8 pad #6, #9 pads A,B,C,D,E (RF Input) (RF Output) (-VAGB ) (-VG) (VD1) (VD2) Center two bond wires equal distance from center line Center two bond wires equal distance from center line 0,120 x 0,120 (.0047 x .0047) 0,120 x 0,120 (.0047 x .0047) 0,240 x 0,120 (.0094 x .0047) 0,275 x 0,340 (.0108 x .0134) 0,120 x 0,120 (.0047 x .0047) 9 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com |
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