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| Advance Product Information February 7, 2006 4 Watt Ka Band Packaged Amplifier * * * * * * TGA4905-CP 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25m pHEMT Technology Bias Conditions: 6 V, 2.1 A (Quiescent) up to 4 A under RF drive Package Dimensions: 13.34 x 9.65 x 1.85 mm (0.525 x 0.380 x 0.073 in) Key Features and Performance Primary Applications Product Description The TriQuint TGA4905-CP is a compact 4 Watt High Power Amplifier Packaged MMIC for Ka-band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. The TGA4905 provides a nominal 36 dBm of output power at an input power level of 18 dBm from 25-31 GHz with a small signal gain of 22 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and LMDS. Pout @ Pin=18dBm (dBm) Gain (dB) * * Satellite Ground Terminals Point to Point Measured Performance 30 Bias Conditions: Vd=6 V Idq=2.1 A 30 25 Gain Input RL Output RL 20 20 10 15 0 10 -10 5 -20 0 25 26 27 28 29 30 31 -30 Frequency (GHz) 40 The TGA4905-CP is 100% RF tested to ensure performance compliance. 38 36 34 32 30 28 26 24 22 20 25 26 27 28 29 30 31 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 1 Return Loss (dB) Advance Product Information February 7, 2006 TGA4905-CP TABLE I MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG Drain Voltage Gate Voltage Range Drain Current (Quiescent) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter 1/ Value 8V -5 V to 0 V 3.0 A 62 mA 24 dBm 16.8 W 150 C 320 C -65 to 150 C 0 0 0 Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/ 1/ 2/ 3/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. PD is the power dissipation allowed in order to reach a channel temperature of 150C with a package base temperature of 70C. When operated at this power dissipation with a baseplate temperature of 70C, the MTTF is 1.0E+6 hours. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ 5/ TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 2 Advance Product Information February 7, 2006 TGA4905-CP TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 6 V, Idq = 2.1 A) SYMBOL Gain PARAMETER Small Signal Gain TEST CONDITION F = 25 - 31GHz TYPICAL 22 UNITS dB IRL Input Return Loss F = 25 - 31GHz 10 dB ORL Output Return Loss F = 25 - 31GHz 8 dB PWR Output Power @ Psat F = 25 - 31GHz 36 dBm TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 6 V ID = 2.1 A (Quiescent) PDISS = 12.6 W TCH (qC) R4JC (qC/W) 4.63 TM (hrs) 128.35 6.9 E+6 Note: Backside of package is at 70 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 23 W with 4 W RF power delivered to load. Power dissipated is 19 W and the temperature rise in the channel is 88 C. Baseplate temperature must be reduced to 62 C to remain below the 150 C maximum channel temperature. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 3 Advance Product Information February 7, 2006 TGA4905-CP Measured Fixtured Performance 30 VD = 6 V Idq = 2.1 A Gain Input RL Output RL 30 25 20 20 10 15 0 10 -10 5 -20 0 20 22 24 26 28 30 32 34 36 -30 Frequency (GHz) 40 38 Pout @ Pin=18dBm (dBm) 36 34 32 30 28 26 24 22 20 25 26 27 28 29 30 31 Frequency (GHz) Return Loss (dB) 4 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com Gain (dB) Advance Product Information February 7, 2006 TGA4905-CP Measured Fixtured Performance VD = 6 V Idq = 2.1 A 40 4.2 3.9 Pout Pout (dBm) & Power Gain (dB) 35 30 25 20 15 10 5 0 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 Ids Gain 3.6 3 2.7 2.4 2.1 1.8 Pin (dBm) Ids (A) 5 3.3 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com Advance Product Information February 7, 2006 TGA4905-CP Package Pinout Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 6 Advance Product Information February 7, 2006 TGA4905-CP Mechanical Drawing 9.65 (0.380) 9.48 (0.373) 8.98 (0.353) 8.47 (0.334) 7.93 (0.312) 2 3 4 6.42 (0.253) 5.24 (0.206) 4.83 (0.190) 4.38 (0.172) Hole Diameter = 1.98 (0.078), 4x 1 5 3.16 (0.124) 1.72 (0.068) 1.16 (0.046) 0.64 (0.025) 0.11 (0.004) 8 7 6 8.46 (0.333) 1.73 (0.068) 10.19 (0.401) 11.66 (0.459) 13.20 (0.520) 13.34 (0.525) 3.21 (0.126) 6.68 (0.263) 0.15 (0.006) 2.52 (0.099) 4.14 (0.163) 4.92 (0.193) 0.00 (0.000) 0 00 ( 0. 0) . 0 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 0.00 (0.000) Units: millimeters (inches) Tolerance: +/-0.08 (0.003) RF Ground through Backside Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 Bond Pad #8 (RF Input) (Vg) (Vd1) (Vd2) (RF Output) (N/C) (N/C) (N/C) 2.03 x 0.57 1.02 x 1.03 1.02 x 1.03 1.02 x 1.03 2.66 x 0.61 1.02 x 1.05 1.02 x 1.05 1.02 x 1.05 (0.080 x 0.022) (0.044 x 0.040) (0.044 x 0.040) (0.044 x 0.040) (0.105 x 0.240) (0.044 x 0.041) (0.044 x 0.041) (0.044 x 0.041) Top View 0.073 +/- 0.005 LID 1.8542 .005 SUBSTRATE STACK . 0. 8153 0.0028/ 0.0 0 24 0.000 0.032 +0.003/-0.002 0.0000 DIMENSIONS IN INCHES Side View 7 Advance Product Information February 7, 2006 TGA4905-CP Bias Schematic GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 8 Advance Product Information February 7, 2006 TGA4905-CP Assembly of a TGA4905-CP into a Module Manual Assembly for Prototypes 1. Clean the module with Acetone. Rinse with alcohol and DI water. Allow the module to fully dry. 2. To improve the thermal and RF performance, TriQuint recommends attaching a heatsink to the bottom of the package. If the TGA4905 is mounted to the heatsink with mounting screws, an indium shim or other compliant material should be inserted between the TGA4905 and the heatsink to reduce thermal contact resistance due to air gaps. The TGA4905 may also be mounted with DieMat DM6030HK conductive epoxy or an equivalent high thermal conductivity epoxy. 3. The DC and RF interconnects may be gold bondwires or gold ribbons. The RF interconnects should be as short as possible. A minimum of two 1 mil wires are recommended for the RF Input, RF Output, Vg, and Vd1. Six bondwires are recommended for Vd2. ORDERING INFORMATION PART TGA4905-CP PACKAGE STYLE CARRIER PLATE TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 9 |
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