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| Advance Product Information May 23, 2002 10 GB/s Differential Transimpedance Amplifier Key Features * * * * * * TGA4805-EPU 0.25 um pHEMT Technology Frequency Range; 30 KHz to > 11GHz 1000 Differential Transimpedance Average Input Eq. Noise: 9 pA / Hz Single Supply Operation: +5V @ 45 mA Chip Size: 1.1 x 0.91 mm Primary Applications Description The TriQuint TGA4805-EPU is a wideband transimpedance amplifier with differential outputs that provides 500 Ohm single-ended transimpedance into a 50 Ohm termination (1000 Ohm differential into a 100 Ohm termination). Typical output return loss is > 15 dB and the average equivalent input noise current is 9 pA/ Hz (1 GHz to 10 GHz). Typical 3dB BW is 30 KHz to 11GHz with 0.2 pF of photodiode capacitance. The TGA4805 operates from a single +5V supply typically dissipating 225mW of DC power. The device is backside grounded with vias and requires no grounding bond wires. The TGA4805 requires off-chip decoupling and the RF ports are DC coupled. Each device is 100% RF tested on-wafer to ensure performance compliance. The device is available in die form. * OC192/STM-64 Fiber-Optic Systems Typical Measured Performance 63 Transimpedance (dB-Ohm) 0 -6 -9 -12 -15 -18 -21 CPD = 0.2 pF RPD = 10 Ohm 1 3 5 7 9 11 13 15 Output Return Loss (dB) 60 57 54 51 48 45 42 39 36 33 Frequency (GHz) Differential TZ (dB-Ohm) S22 Inverting Output S22 Noninverting Output -3 -24 -27 -30 60 Group Delay Ripple (ps) 50 40 30 20 10 0 -10 1 3 5 7 9 11 13 15 Frequency (GHz) CPD = 0.2 pF RPD = 10 Ohm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 23, 2002 TGA4805-EPU TABLE I MAXIMUM RATINGS Symbol V+ I+ PD PIN TCH TM TSTG 1/ 2/ 3/ 4/ Parameter 1/ Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value +6.0V 60 mA 360 mW +15 dBm 150 C 320 C -65 C to 150 C Notes 2/ 3/, 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) Vd = 5V P a ra m e te r T ra n s im p e d a n c e T ra n s im p e d a n c e R ip p le U p p e r 3 d B B a n d w id th L o w e r 3 d B B a n d w id th * G ro u p D e la y R ip p le ps E q . In p u t N o is e C u rre n t O u tp u t R e tu rn L o s s S u p p ly V o lta g e S u p p ly C u rre n t p A / H z dB V mA dBpp GHz kH z U n its dB C o n d itio n S in g le -e n d e d , R L = 5 0 1 G H z to 1 0 G H z C P D = 0 .2 p F , R P D = 1 0 C P D = 0 .2 p F , R P D = 1 0 C P D = 0 .2 p F , R P D = 1 0 1 G H z to 8 G H z C P D = 0 .2 p F , R P D = 1 0 A v e : 1 G H z to 1 0 G H z C P D = 0 .2 p F 3 0 K H z to 1 2 G H z T y p ic a l 54 2 11 30 +10 9 15 5 .0 45 * Set by off-chip capacitance Note: Electrical parameters are calculated for a photodiode equivalent circuit of 0.2pF and 10 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 23, 2002 TGA4805-EPU Measured Fixtured Data 63 Transimpedance (dB-Ohm) 0 -6 -9 -12 -15 -18 -21 CPD = 0.2 pF RPD = 10 Ohm 1 3 5 7 9 11 13 15 Output Return Loss (dB) 60 57 54 51 48 45 42 39 36 33 Frequency (GHz) Differential TZ (dB-Ohm) S22 Inverting Output S22 Noninverting Output -3 -24 -27 -30 60 Group Delay Ripple (ps) 50 40 30 20 10 0 -10 1 3 5 7 9 11 13 15 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 CPD = 0.2 pF RPD = 10 Ohm TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 23, 2002 TGA4805-EPU + 5V 0.1F RF IN - RF OUT + RF OUT 0.1F 0.1F Voffset Adjust Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information May 23, 2002 TGA4805-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information May 23, 2002 TGA4805-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 |
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