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| Features * * * * * * * No External Components Except PIN Diode Supply-voltage Range: 2.7 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Automatic Supply Voltage Adaptation Enhanced Immunity against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode Fusing 2.5% * TTL and CMOS Compatible Applications * Audio Video Applications * Home Appliances * Remote Control Equipment Low-voltage IR Receiver ASSP T2526 Description The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram of Figure 1. The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the choosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present enviromental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. The T2526 operates in a supply-voltage range from 2.7 V to 5.5 V. By default, the T2526 is optimized for best performance within 2.7 V to 3.3 V. Figure 1. Block Diagram VS IN Input CGA and filter Demodulator OUT Microcontroller Oscillator Carrier frequency f0 AGC/ATC and digital control T2526 Modulated IR signal min 6 or 10 pulses GND Rev. 4597C-AUTO-11/03 Pin Configuration Figure 2. Pinning SO8 and TSSOP8 VS 1 8 NC NC 2 7 NC OUT 3 6 GND NC 4 5 IN Pin Description Pin 1 2 3 4 5 6 7 8 Symbol VS NC OUT NC IN GND NC NC Function Supply voltage Not connected Data output Not connected Input PIN-diode Ground Not connected Not connected Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Supply voltage Supply current Input voltage Input DC current at VS = 5 V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to 6 3 -0.3 to VS 0.75 -0.3 to VS 10 -25 to +85 -40 to +125 30 Unit V mA V mA V mA C C mW 2 T2526 4597C-AUTO-11/03 T2526 Thermal Resistance Parameter Junction ambient SO8 Junction ambient TSSOP8 Symbol RthJA RthJA Value 130 tbd Unit k/W K/W Electrical Characteristics, 3-V Operation Tamb = 25C, VS = 3 V unless otherwise specified. No. 1 1.1 1.2 Parameters Supply Supply-voltage range Supply current Test Conditions Pin 1 Symbol VS IS Min. 2.7 0.7 Typ. 3.0 0.9 Max. 3.3 1.3 Unit V mA Type* C B IIN =0 Tamb = 25C See Figure 12 on page 9 R2 = 2.4 kW See Figure 12 on page 9 R2 = 0 See Figure 12 on page 9 VIN = 0 See Figure 12 on page 9 VIN = 0; Vs = 3 V Tamb = 25C 1 2 2.1 2.2 2.3 2.4 Output Internal pull-up resistor(1) Output voltage low Output voltage high Output current clamping 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS - 0.25 8 30/40 250 Vs kW mV V mA A B B B 3 3.1 3.2 Input Input DC current Input DC current See Figure 5 on page 6 Minimum detection threshold current See Figure 3 on page 6 5 5 IIN_DCMAX IIN_DCMAX -150 -350 A A C B 3.3 3.4 Test signal: See Figure 11 on page 9 VS = 3 V Tamb= 25C, IIN_DC=1A Minimum detection square pp threshold current with AC burst N=16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 10 on page 8 3 A at 100 Hz BER = 50(2) Test signal: See Figure 11 on page 9 VS = 3 V, Tamb = 25C IIN_DC = 1 A square pp burst N = 16 f = f0; tPER = 10 ms Figure 10 on page 8 BER = 5%(2) 3 IEemin -700 pA B 3 IEemin -1500 pA C 3.5 Maximum detection threshold current with VIN > 0V 3 IEemax -200 A D *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 3 4597C-AUTO-11/03 Electrical Characteristics, 3-V Operation (Continued) Tamb = 25C, VS = 3 V unless otherwise specified. No. 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 Parameters Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(3) Center frequency fusing accuracy of bandpass Overall accuracy center frequency of bandpass Overall accuracy center frequency of bandpass BPF bandwidth Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter GVARMAX GVARMIN GMAX VS = 3 V, Tamb = 25C f03V_FUSE f03V Tamb = 0 to 70C -3 dB; f0 = 38 kHz; See Figure 9 on page 8 f03V B -2.5 -5.5 -4.5 51 -5 71 f0 f0 f0 3.8 +2.5 +3.5 +3.0 dB dB dB % % % kHz D D D A C C C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage Electrical Characteristics, 5-V Operation Tamb = 25C, VS = 5 V unless otherwise specified. No. 5 5.1 5.2 Parameters Supply Supply-voltage range Supply current Test Conditions Pin 1 Symbol VS IS Min. 4.5 0.9 Typ. 5.0 1.2 Max. 5.5 1.6 Unit V mA Type* C B IIN =0 Tamb = 25C See Figure 12 on page 9 R2 = 2.4 kW See Figure 12 on page 9 R2 = 0 See Figure 12 on page 9 VIN = 0 See Figure 12 on page 9 VIN = 0; Vs = 5 V Tamb = 25C 1 6 6.1 6.2 6.3 6.4 Output Internal pull-up resistor(1) Output voltage low Output voltage high Output current clamping 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS - 0.25 8 30/40 250 Vs kW mV V mA A B B B 7 7.1 7.2 Input Input DC current Input DC-current See Figure 6 on page 7 5 5 IIN_DCMAX IIN_DCMAX -400 -700 A A C B *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 4 T2526 4597C-AUTO-11/03 T2526 Electrical Characteristics, 5-V Operation (Continued) Tamb = 25C, VS = 5 V unless otherwise specified. No. 7.3 Parameters Min. detection threshold current See Figure 4 on page 6 Test Conditions Pin 3 Symbol IEemin Min. Typ. -890 Max. Unit pA Type* B 7.4 Test signal: See Figure 11 on page 9 VS = 5 V Tamb = 25C IIN_DC = 1A Min. detection threshold square pp current with AC current burst N = 16 disturbance IIN_AC100 = f = f0; tPER = 10 ms 3 A at 100 Hz Figure 10 on page 8 BER = 50(2) Test signal: See Figure 11 on page 9 VS = 5 V, Tamb = 25C IIN_DC = 1A square pp burst N = 16 f = f0; tPER = 10 ms Figure 10 on page 8 BER = 5%(2) 3 IEemin -2500 pA C 7.5 Max. detection threshold current with VIN > 0V 3 IEemax -500 A D 8 8.1 8.2 8.3 Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(3) Resulting center frequency fusing accuracy f0 fused at VS = 3 V VS = 5 V, Tamb = 25C GVARMAX GVARMIN GMAX f05V 51 -5 71 f03V-FUSE + 0.5 dB dB dB D D D 8.4 % A *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage ESD Reliability All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 Electrical qualification (1000h) in molded SO8 plastic package 5 4597C-AUTO-11/03 Typical Electrical Curves at Tamb = 25C Figure 3. IEemin versus IIN_DC , VS = 3 V 100.0 VS = 3 V f = f0 10.0 Eemin (nA) 1.0 I 0.1 0.1 1.0 10.0 100.0 1000.0 I IN_DC (A) Figure 4. IEemin versus IIN_DC , VS = 5 V 100.0 VS = 5 V f = f0 10.0 I Eemin (nA) 1.0 0.1 0.1 1.0 10.0 100.0 1000.0 I IN_DC (A) Figure 5. VIN versus IIN_DC, VS = 3 V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 1.0 10.0 IN_DC VS = 3 V f = f0 V IN (V) 100.0 1000.0 I (A) 6 T2526 4597C-AUTO-11/03 T2526 Figure 6. VIN versus IIN_DC, VS = 5 V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 1.0 10.0 IN_DC VS = 5 V f = f0 V IN (V) 100.0 1000.0 I (A) Figure 7. Data Transmission Rate, VS = 3 V 5000 4500 4000 3500 3000 VS = 3 V Short burst Bits/s 2500 Standard type 2000 1500 Lamp type 1000 500 0 25.0 35.0 45.0 55.0 65.0 75.0 85.0 f 0 (kHz) Figure 8. Data Transmission Rate, VS = 5 V 5000 4500 4000 3500 3000 Standard type VS = 5 V Short burst Bits/s 2500 2000 1500 1000 500 0 25.0 Lamp type 35.0 45.0 55.0 65.0 75.0 85.0 f 0 (kHz) 7 4597C-AUTO-11/03 Figure 9. Typical Bandpass Curve 1.10 VS = 3 V 1.00 Relative amplitude 0.90 0.80 Bandwidth (-3 dB) 0.70 0.60 0.50 0.40 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f 0 Q = f/f0/B; B => -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11 Figure 10. Illustration of Used Terms Example: f = 30 kHz, burst with 16 pulses, 16 periods 1066 s IN 1 533 s 7 16 Period (P = 16) Burst (N = 16 pulses) 7 7 OUT tDON tDOFF Envelope 1 33 s 533 s Envelope 16 17056 s/data word OUT Data word 17 ms TREF = 62 ms Telegram pause Data word 8 T2526 4597C-AUTO-11/03 T2526 Figure 11. Test Circuit IEe = DU1/400k DU1 IEe 1 nF 400k IIN_DC VDD = 3 V to 5 V R1 = 220 20k IIN_AC100 IIN VPulse 1 nF DU2 IN VS T2526 GND OUT 20k f0 16 DC + tPER = 10 ms IIN_DC = DU2/40k C1 4.7 F Figure 12. Application Circuit VDD = 3 V to 5 V *) optional R1 = 220 R2* > 2,4k IS VS RPU IOCL IIN IN T2526 GND Microcontroller OUT C1 4.7 F VIN VO IIN_DC IEe C2* = 470 pF 9 4597C-AUTO-11/03 Chip Dimensions Figure 13. Chip Size in m 1210, 1040 GND 336, 906 IN 783, 887 Scribe VS Length 55, 652 T2526 55, 62 OUT 0, 0 FUSING Width Note: Pad coordinates are given for lower left corner of the pad in m from the origin 0,0 Dimensions Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads 1.15 mm 1.29 mm 290 5% 90 90 70 70 AlCu/AlSiTi(1) 0.8 m Si3N4/SiO2 0.7/0.3 m Pad metallurgy Material Thickness Finish Material Thickness Note: 1. Value depends on manufacture location. 10 T2526 4597C-AUTO-11/03 T2526 Ordering Information Delivery: unsawn wafers (DDW) in box, SO8 (150 mil) and TSSOP8 (3 mm body). Extended Type Number PL(2) RPU(3) D(4) Type Standard type: 10 pulses, enhanced sensibility, high data rate Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: 6 pulses, enhanced data rate T2526N0xx(1)-yyy(5) T2526N1xx(1)-DDW T2526N2xx(1)-yyy(5) T2526N3xx -DDW T2526N6xx(1)-yyy(5) T2526N7xx(1)-DDW Notes: 1. 2. 3. 4. 5. (1) 2 1 2 1 2 1 30 30 40 40 30 30 2179 2179 1404 1404 3415 3415 xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request) Two pad layout versions (see Figure 14 and Figure 15) available for different assembly demand Integrated pull-up resistor at pin OUT (see electrical characteristics) Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 10 on page 8) yyy means kind of packaging: .................... .......DDW -> unsawn wafers in box .................... .......6AQ -> (only on request, TSSOP8 taped and reeled) Pad Layout Figure 14. Pad Layout 1 (DDW only) GND IN OUT T2526 VS FUSING Figure 15. Pad Layout 2 (DDW, SO8 or TSSOP8) (6) (1) VS T2526 GND (5) IN (3) OUT FUSING 11 4597C-AUTO-11/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c) Atmel Corporation 2003. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4597C-AUTO-11/03 |
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