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| Semiconductor SUR503EF Epitaxial Planar Type NPN Silicon Transistor Description * Digital transistor Features * Two SRC1206 chips in SOT-563F package * With built-in bias resistors Ordering Information Type NO. SUR503EF Marking HH Package Code SOT-563F Outline Dimensions 3 R2 unit : 2 R1 mm 1 Tr2 R2 R1 Tr1 4 5 6 R1 Tr1 Tr2 4.7K 4.7K R2 47K 47K PIN Connections 1. Emitter 1 2. Base 1 3. Collector 2 4. Emitter 2 5. Base 2 6. Collector 1 KST-J003-003 1 SUR503EF Absolute maximum ratings (Tr1, Tr2) Characteristic Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature Ta=25C Symbol VO VI IO PD TJ TSTG Ratings 50 20 100 100 150 -55 ~ 150 Unit V V mA mW C C Electrical Characteristics(Tr1, Tr2 : PNP) Characteristic Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current Ta=25C Symbol IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * Test Condition VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V Min. Typ. Max. 80 0.5 200 0.1 0.9 0.65 200 500 0.3 1.3 1.8 Unit nA V V V MHz mA II * : Characteristic of Transistor Only KST-J003-003 2 SUR503EF Electrical Characteristic Curves Tr1, Tr2 : NPN Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KST-J003-003 3 |
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