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| Semiconductor SUF620EF P-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * Low threshold voltage * Two STJ828 Chips in SOT-563F Package. Ordering Information Type NO. SUF620EF Marking X Package Code SOT-563F Outline Dimensions unit : mm 3 2 1 Q2 Q1 4 5 6 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 KST-J016-000 1 SUF620EF Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Q1,Q2 Common) (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings -20 7 -50 100 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Q1,Q2 Common) (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss tON tOFF Test Condition ID=-100A, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V Min. Typ. Max. -20 -0.5 -1.5 -1 1 40 15 10.4 8.4 2.8 0.15 0.13 Unit V V A A mS pF pF pF *. Switching Time Test Circuit = KST-J016-000 2 SUF620EF Electrical Characteristic Curves Fig1 ID - VDS Fig2 ID - VDS Fig3 IDR - VDS Fig4 ID - VGS 100 - Fig5 Yfs - ID Fig6 C - VDS KST-J016-000 3 SUF620EF Fig7 VDS(on) - ID Fig8 t - ID Fig9 PD - Ta KST-J016-000 4 |
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