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| Semiconductor SUF520J N-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * 2.5V Gate drive. * Low threshold voltage : Vth = 0.5~1.5V. * Two STK1828 Chips in SOT-363 Package. Ordering Information Type NO. SUF520J Marking H Package Code SOT-363 Outline Dimensions unit : mm 2.1 BSC 1.25 BSC 3 2 1 1 2 0.15~0.30 6 1.30 BSC 5 4 3 2.0 BSC Q2 Q1 4 5 6 0.90.1 0~0.1 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 0.1~0.25 0.25 Min. KST-6030-000 1 SUF520J Absolute maximum ratings ( Q1, Q2 Common) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Power dissipation Channel temperature Storage temperature range * : Total rating (Ta=25C) Symbol VDS VGSS ID PD* Tch Tstg Ratings 20 10 50 200 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss tON tOFF Test Condition ID=100A, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Min. Typ. Max. 20 0.5 1.5 1 1 20 20 5.5 6.5 1.6 0.14 0.14 40 Unit V V A A mS pF pF pF * Switching Time Test Circuit = KST-6030-000 2 SUF520J Electrical Characteristic Curves Fig.1 ID - VDS Fig.2 PD* - Ta Fig.3 IDR - VDS Fig.4 ID - VGS 100 - Fig.5 Yfs- ID Fig.6 C - VDS KST-6030-000 3 Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID SUF520J KST-6030-000 4 |
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