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| SUD45N05-20L Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 50 rDS(on) (W) 0.018 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A)a "30 "30 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45N05-20L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 50 "20 "30 "30 "100 43 37 93 75 2.5a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Free Air, FR4 Board Mount Maximum Junction-to-Ambient Free Air, Vertical Mount Maximum Junction-to-Case Notes a. Package limited. b. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70271 S-57247--Rev. E, 23-Mar-98 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 60 110 2.0 Unit _C/W 2-1 SUD45N05-20L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 50 V, VGS = 0 V, TJ = 125_C VDS = 50 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A DiS OS Ri Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 43 A, TJ = 125_C VGS = 4.5 V, ID = 43 A Forward Transconductanceb gfs VDS = 15 V, ID = 43 A 20 43 0.018 0.036 0.040 0.020 S W 50 V 1.0 2.0 "100 1 50 150 A mA A nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 25 V, RL = 0 6 W V, 0.6 ID ^ 43 A, VGEN = 10 V RG = 2 5 W A V, 2.5 V, VDS = 25 V, VGS = 10 V ID = 43 A V VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 370 130 43 7 10 10 10 32 7 20 20 ns 60 15 60 nC C 3600 pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 43 A, VGS = 0 V IF = 43 A, di/dt = 100 A/ms 49 43 1.5 100 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70271 S-57247--Rev. E, 23-Mar-98 SUD45N05-20L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10, 9, 8, 7, 6 V 80 I D - Drain Current (A) 50 5V I D - Drain Current (A) 40 60 Transfer Characteristics 60 30 40 4V 20 TC = -125_C 25_C -55_C 0 20 3V 0 0 2 4 6 8 10 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 0.04 On-Resistance vs. Drain Current g fs - Transconductance (S) 60 25_C 40 125_C r DS(on) - On-Resistance ( ) TC = -55_C 0.03 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 60 0 0 20 40 60 ID - Drain Current (A) ID - Drain Current (A) Capacitance 3000 10 Gate Charge V GS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) Ciss 8 VDS = 25 V ID = 43 A 2000 6 1500 4 1000 Coss 500 Crss 2 0 0 10 20 30 40 50 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70271 S-57247--Rev. E, 23-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUD45N05-20L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.25 2.00 r DS(on) - On-Resistance ( ) (Normalized) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) I S - Source Current (A) TJ = 150_C VGS = 10 V ID = 20 A 100 Source-Drain Diode Forward Voltage TJ = 25_C 10 THERMAL RATINGS Maximum Drain Current vs. CaseTemperature 50 200 100 40 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 10 100 ms 1 ms Safe Operating Area 30 20 10 ms 1 TC = 25_C Single Pulse 100 ms dc, 1 s 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 0.02 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70271 S-57247--Rev. E, 23-Mar-98 |
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