 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUD25N06-45L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.035 @ VGS = 10 V 0.045 @ VGS = 4.5 V ID (A) 25 22 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD25N06-45L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 60 "20 25 16 30 25 25 31 50 2.5a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Surface mounted on 1" x 1" FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70274 S-57253--Rev. E, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA RthJC Limit 60 3.0 Unit _C/W 2-1 SUD25N06-45L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10V VGS = 10 V, ID = 12 A DiS OS Ri Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 12 A, TJ = 125_C VGS = 10 V, ID = 12 A, TJ = 175_C VGS = 4.5 V, ID = 12 A Forward Transconductanceb gfs VDS = 15 V, ID = 12 A 15 20 0.025 0.045 0.058 0.036 25 0.035 0.063 0.081 0.045 S W 60 1.0 3.0 "100 1 50 150 A mA A nA V Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 1 2 W V, 1.2 ID ^ 25 A VGEN = 10 V RG = 7 5 W A, V, 7.5 VDS = 30 V VGS = 10 V ID = 25 A V, V, VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 1320 210 56 26 7.5 4.5 10 10 31 10 20 20 ns 45 20 40 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)a Pulsed Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISM VSD trr Qrr IF = 25 A, VGS = 0 V 60 IF = 25 A, di/dt = 100 A/ms 0.13 30 1.5 90 A V ns mC Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70274 S-57253--Rev. E, 24-Feb-98 SUD25N06-45L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5, 6, 7, 8, 9, 10 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 4V 12 18 12 TC = 125_C 6 25_C -55_C 0 6 1, 2, 3 V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 50 TC = -55_C r DS(on) - On-Resistance ( ) 40 g fs - Transconductance (S) 25_C 30 125_C 20 0.075 0.100 On-Resistance vs. Drain Current 0.050 VGS = 4.5 V VGS = 10 V 0.025 10 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1800 10 Gate Charge V GS - Gate-to-Source Voltage (V) 1500 C - Capacitance (pF) Ciss 1200 8 VDS = 30 V ID = 25 A 6 900 4 600 Coss 300 Crss 2 0 0 10 20 30 40 50 60 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70274 S-57253--Rev. E, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUD25N06-45L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 12 A r DS(on)- On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Drain Current vs. Case Temperature 30 50 Limited by rDS(on) 100 s Safe Operating Area 24 I D - Drain Current (A) I D - Drain Current (A) 10 18 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms dc, 1 s 12 6 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70274 S-57253--Rev. E, 24-Feb-98 |
Price & Availability of SUD25N06-45L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |