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| STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D2PAK MDmeshTM low voltage Power MOSFET TARGET SPECIFICATION General features Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2m 4.5m 4.5m ID 120A (1) 3 120A (1) 120A (1) 1 2 TO-220 TO-247 1. Current limited by package Ultra low on-resistance 100% Avalanche tested 3 1 DPAK Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature SizeTM"strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications Switching application Order codes Part number STB160N75F3 STP160N75F3 STW160N75F3 Marking 160N75F3 160N75F3 160N75F3 Package DPAK TO-220 TO-247 Packaging Tape & reel Tube Tube February 2007 Rev 1 1/13 www.st.com 13 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 75 20 120 96 480 315 2.1 Tbd Tbd -55 to 175 Unit V V A A A W W/C V/ns mJ C ID (1) IDM (2) PTOT (3) dv/dt EAS Tj Tstg Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. Rated according to Rthj-case Table 2. Symbol Rthj-case Rthj-amb Tl Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.48 62.5 300 Unit C/W C/W C 3/13 Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,@125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 60A DPAK 2 3.5 3.2 Min. Typ. Max Unit 75 10 100 200 V A A nA V m m IGSS VGS(th) RDS(on) 4 4.5 4.2 Table 4. Symbol gfs(1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15V, ID= 4.5A ID = 10A Min Typ Tbd 7000 1100 32 110 Tbd Tbd Tbd Max Unit S pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=44V, ID = 60A VGS =10V (see Figure 2) 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 4/13 STB160N75F3 - STP160N75F3 - STW160N75F3 Table 5. Symbol td(on) tr td(off) tf Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=35 V, ID= 60A, RG=4.7, VGS=10V, (see Figure 4) Min. Typ. Tbd Tbd Tbd Tbd Max. Unit ns ns ns ns Table 6. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, di/dt = 100A/s, VDD=30 V, Tj=150C (see Figure 3) 75 195 5 Test conditions Min. Typ. Max. Unit 120 480 1.5 A A V ns nC A 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/13 Test circuit STB160N75F3 - STP160N75F3 - STW160N75F3 3 Figure 1. Test circuit Switching times test circuit for resistive load Figure 2. Gate charge test circuit Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped inductive load test circuit Figure 5. Unclamped inductive waveform Figure 6. Switching time waveform 6/13 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/13 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 8/13 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 9/13 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/13 STB160N75F3 - STP160N75F3 - STW160N75F3 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/13 Revision history STB160N75F3 - STP160N75F3 - STW160N75F3 6 Revision history Table 7. Date 07-Feb-2007 Revision history Revision 1 First release Changes 12/13 STB160N75F3 - STP160N75F3 - STW160N75F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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