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| S T M9930A S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 6A R DS (ON) ( m W ) Max ID -5.3A R DS (ON) ( m W ) Max 35 @ V G S = 10V 54 @ V G S = 4.5V P1S 53 @ V G S = -10V 75 @ V G S = -4.5V P2S P2G P2G N2D/P2D P1S/P2S P1G N2G N1S/N2S N1D/P1D N1G P1G P1N1D P2N2D S O-8 N1G N1S N2S N2G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 30 20 6 4 20 1.7 2 1.44 -55 to 150 -30 20 -5.3 -3.5 -20 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M9930A N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 5A VGS =4.5V, ID= 3A VDS = 5V, VGS = 4.5V VDS = 10V, ID= 5A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 29 42 20 8 550 130 60 2.3 7 8 15 6 13 6.6 1.4 3.8 3 35 54 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =5A,VGS =10V VDS =15V, ID =5A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 5 A VGS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M9930A P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID= -5A VGS =-4.5V, ID= -3A VDS = -5V, VGS = -10V VDS = -10V, ID = -5A Min Typ C Max Unit -30 -1 V uA 100 nA -1 -1.5 44 62 -20 9 650 170 100 2.2 9 16 51 36 13 6.6 1.2 4.3 -3 53 75 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -15V ID = -1A VGS = -10V R GE N = 6 ohm VDS =-15V, ID =-5A,VGS =-10V VDS =-15V, ID =-5A,VGS =-4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =-15V, ID = -5 A VGS =-10V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M9930A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.82 -0.8 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR4 Board, tO10sec. b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 20 V G S =10V V G S =4.5V V G S =4V ID, Drain C urrent(A) 15 16 ID, Drain C urrent (A) 125 C 12 10 8 5 V G S =3V V G S =2.5V 4 0 25 C -55 C 0 0.8 1.6 2.4 3.2 4.0 4.8 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 50 F igure 2. Trans fer C haracteris tics 1.5 R DS (ON), On-R es is tance Normalized V G S =4.5V 1.4 1.3 1.2 1.1 1.0 0 V G S =4.5V ID=3A R DS (on) (m W) 40 30 V G S =10V ID=5A V G S =10V 20 10 0 0 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 S T M9930A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 ID=250uA 6 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 100 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=5A Is , S ource-drain current (A) 80 R DS (on) (m W) 125 C 60 75 C 40 25 C 10.0 125 C 25 C 75 C 20 0 0 2 4 6 8 10 1.0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M9930A V G S , G ate to S ource V oltage (V ) 1000 800 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VDS =15V ID=5A C , C apacitance (pF ) C is s 600 400 C os s 200 C rs s 0 6 0 5 10 15 20 25 30 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) 40 10 ID, Drain C urrent (A) R DS 100 60 Tr (O N) L im it 10m s 10 1s DC 0m s 10 T D(o ff) Tf T D(on) 11 1 1 V DS =15V ,ID=1A V G S = 10 V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T M9930A P-C hannel 20 V G S =-10V V G S =-4.5V V G S =-4V 20 -ID, Drain C urrent(A) -ID, Drain C urrent (A) 15 16 12 10 V G S =-3V 8 5 V G S =-2.5V 125 C 25 C 4 0 0 0.8 -55 C 2.4 3.2 4.0 4.8 0 0 0.5 1 1.5 2 2.5 3 1.6 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 100 F igure 2. Trans fer C haracteris tics 1.5 R DS (ON), On-R es is tance Normalized R DS (on) (m W) 80 V G S =-4.5V 60 40 20 0 1.4 1.3 1.2 1.1 1.0 V G S =-10V ID=-5A V G S =-10V V G S =-4.5V ID=-3A 0 4 8 12 16 20 0 25 50 75 100 125 -ID, Drain C urrent (A) 150 T j( C ) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T M9930A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 100 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=-5A -Is , S ource-drain current (A) 125 C 75 C 25 C 10.0 R DS (on) (m W) 80 60 40 20 0 25 C 125 C 75 C 1.0 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 -V G S , G ate- S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M9930A 1000 -V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) 800 C i ss VDS =-15 V ID=-5A C , C apacitance (pF ) 600 400 C oss 6 200 C rs s 0 0 5 10 15 20 25 30 -V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance 600 S witching T ime (ns ) -ID, Drain C urrent (A) F igure 10. G ate C harge 40 10 R DS 100 60 10 (O N) L im it 10m s T D (o ff) Tr Tf T D(on) 10 1s DC 0m s 11 1 1 V D S = -15V,I D=-1A V G S = -10 V 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance (W) -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 S T M9930A PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M9930A SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
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