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STGP12NB60K
N-CHANNEL 18A - 600V TO-220 SHORT CIRCUIT PROOF PowerMESHTM IGBT
TYPE STGP12NB60K
s s s s s s s
VCES 600 V
VCE(sat)
(Max) @25C
IC(#)
@ 100C
< 2.8 V
18 A
HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 10 MICROS
3 1 2
TO-220
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS s UPS
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STGP12NB60K MARKING GP12NB60K PACKAGE TO-220 PACKAGING TUBE
December 2003
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ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 30 18 60 10 125 1.0 -65 to 150 150 Unit V V V A A A
s
W W/C C C
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.0 62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 50 100 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A VGE = 15V, IC = 12 A VGE = 15V, IC = 12 A, Tj =125C Test Conditions VCE = 25 V , IC = 12 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Min. 5 2.2 1.7 Typ. Max. 7 2.8 Unit V V V
DYNAMIC
Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Twsc Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Short Circuit WITHSTAND Time Typ. 5 890 110 22 54 8 31 48 10 Max. Unit S pF pF pF nC nC nC A s
VCE = 480V, IC = 12 A, VGE = 15V Vclamp = 480 V , VGE =15V, Tj = 125C , RG = 10 VCE = 0.5 BVces , VGE = 15 V Tj = 125C , RG = 10
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 12 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 12 A RG=10 VGE = 15 V,Tj = 125C Min. Typ. 25 14.5 590 180 Max. Unit ns ns A/s J
SWITCHING OFF
Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 12 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 12 A, RGE = 10 , VGE = 15 V Min. Typ. 130 25 96 100 258 410 310 80 150 220 650 830 Max. Unit ns ns ns ns J J ns ns ns ns J J
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula: T JMAX - T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ - C x VCESAT ( MAX )(T C, I C)
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Output Characteristics Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
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Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
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Total Switching Losses vs Collector Current Turn-Off SOA
Thermal Impedance
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Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching
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TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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