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| STF40NF06 N-CHANNEL 60V - 0.024 - 23A - TO-220FP STripFETTMII MOSFET Table 1: General Features TYPE STF40NF06 s s s s Figure 1: Package RDS(on) < 0.028 ID 23 A VDSS 60 V s TYPICAL RDS(on) = 0.024 EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100C APPLICATION ORIENTED CHARACTERIZATION 100% AVALANCHE TESTED 3 1 2 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS Table 2: Order Codes Part Number STF40NF06 Marking F40NF06 Package TO-220FP Packaging TUBE Rev.2 November 2004 1/9 STF40NF06 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature Value 60 60 20 23 16 92 30 0.2 10 250 2500 -55 to 175 Unit V V V A A A W W/C V/ns mJ V C (1) ISD 40A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.. (2) Starting Tj=25C, ID=20A, VDD=30V ( ) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Tl Thermal Resistance Junction-case Max Maximum Lead Temperature For Soldering Purpose 5.0 275 C/W C ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125C Gate-body Leakage Current (VDS = 0) VGS = 20V Table 6: On Symbol VGS(th) RDS(on) Parameter Static Drain-source On Resistance Test Conditions VGS = 10V, ID = 11.5 A Min. 2 0.024 Typ. Max. 4 0.028 Unit V Gate Threshold Voltage VDS = VGS, ID = 250A 2/9 STF40NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 30 V ID =11.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 12 920 225 80 Max. Unit S pF pF pF Table 8: Switching On Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30V, ID = 20A RG = 4.7 VGS = 10V (see Figure 16) VDD = 48V, ID = 10A, VGS = 10V Min. Typ. 27 11 32 6.5 15 43 Max. Unit ns ns nC nC nC Table 9: Switching Off Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 30V, ID = 20A, RG=4.7, VGS = 10V (see Figure 16) Min. Typ. 27 11 Max. Unit ns ns Table 10: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 23A, VGS = 0 ISD = 40A, di/dt = 100A/s, VDD = 10V, Tj = 150C (see test circuit, Figure 5) 63 150 4.8 Test Conditions Min. Typ. Max. 23 92 1.3 Unit A A V ns nC A (1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/9 STF40NF06 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/9 STF40NF06 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/9 STF40NF06 Figure 15: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Wafeform Figure 16: Switching Times Test Circuit For Resistive Load Figure 19: Gate Charge Test Circuit Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/9 STF40NF06 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 7/9 STF40NF06 Table 11: Revision History Date 07-Oct-2004 11-Nov-2004 Revision 1 2 First release Final datasheet Description of Changes 8/9 STF40NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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