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| STC08DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBTTM 1500 V - 8 A - 0.075 W PRELIMINARY DATA Table 1: General Features VCS(ON) 0.6 V n n n n Figure 1: Package RCS(ON) 0.075 W IC 8A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 W 2 3 4 APPLICATION n SINGLE SWITCH SMPS BASED ON THREE PHASE MAINS DESCRIPTION The STC08DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150 is designed for use in aux flyback smps for any three phase application. TO247-4L 1 Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STC08DE150 Marking C08DE150 Package TO247-4L Device Structure Packaging TUBE January 2005 Rev. 1 1/9 STC08DE150 Table 3: Absolute Maximum Ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 1500 30 9 20 8 15 4 8 155 -65 to 125 125 Unit V V V V A A A A W C C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max 0.64 Unit o C/W Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICS(SS) IBS(OS) ISB(OS) Parameter Collector-Source Current (VBS = VGS = 0 V) Base-Source Current (IC = 0 , VGS = 0 V) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage (VBS = 0 V) VCS(ON) Collector-Source ON Voltage hFE DC Current Gain VGS = 10 V IC = 8 A VGS = 10 V IC = 5 A IC = 8 A IC = 5 A VBS(ON) Base-Source ON Voltage VGS(th) Ciss Gate Threshold Voltage Input Capacitance VCS = 1 V VCS = 1 V IB = 1.6 A IB = 0.5 A VGS = 10 V VGS = 10 V IB = 1.6 A IB = 0.5 A IB = 250 mA VGS = VCB =0 VGS = 10 V VCB = 0 RG = 47 W tp = 4 ms IB = 0.5 A hFE = 5 A IC = 8 A 15 526 8.5 ns ns V 1.5 4.5 8 0.6 0.6 7.5 10 1.5 1 2.2 750 12.5 3 2 V V V pF nC 1.4 V V VGS = 20 V 500 nA VSB(OS) = 9 V 100 mA Test Conditions VCS(SS) = 1500 V VBS(OS) = 30 V Min. Typ. Max. 100 10 Unit mA mA VGS = 10 V IC = 8 A VGS = 10 V IC = 5 A VBS = VGS VCS = 25 V f = 1 MHz IC = 8 A VCS = 25 V VGS = 10 V VClamp = 1200 V IC = 5 A QGS(tot) Gate-Source Charge INDUCTIVE LOAD ts tf VCSW Storage Time Fall Time Maximum Collector-Source RG = 47 W Voltage Switched Without Snubber 2/9 STC08DE150 Symbol Parameter RG = 47 W IB = 0.8 A IBpeak = 8 A (2 IC) VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 300 V RG = 47 W IB = 0.8 A IBpeak = 8 A (2 IC) VGS = 10 V IC = 4 A tpeak = 500 ns 2.2 V Test Conditions VCC = VClamp = 300 V VGS = 10 V IC = 4 A tpeak = 500 ns Min. Typ. 6 Max. Unit V VCS(dyn) Collector-Source Dynamic Voltage (500 ns) 3/9 STC08DE150 Figure 3: Output Characteristics Figure 6: Dynamic Collector-Emitter Saturation Voltage Figure 4: Reverse Biased Safe Operating Area Figure 7: Gate Threshold Voltage vs Temperature Figure 5: DC Current Gain 4/9 STC08DE150 Figure 8: Collector-Source On Voltage Figure 11: Collector-Source On Voltage Figure 9: Base-Source On Voltage Figure 12: Base-Source On Voltage Figure 10: Inductive Load Switching Time Figure 13: Inductive Load Switching Time 5/9 STC08DE150 Figure 14: Enlargement FBSOA Circuit Table 6: Components, Values VB1 = 4.16 V D1 = BA157 R1 = 1 W R2 = 100 W R3 = 180 W Rg = 47 W C1 = 4700 F C2 1000 pF VCC = 1500 V Vg = 10 V Pulse Time = 5 s 6/9 STC08DE150 TO247-4L MECHANICAL DATA DIM. MIN. A A1 b b1 b2 c D E e e1 L L1 L2 OP OR S 3.55 4.50 5.50 14.20 3.70 18.50 3.65 5.50 4.85 2.20 0.95 1.30 2.50 0.40 19.85 15.45 2.54 5.08 14.80 4.30 1.10 mm TYP. MAX. 5.15 2.60 1.30 1.70 2.90 0.80 20.15 15.75 7536918A 7/9 STC08DE150 Table 7: Revision History Date 20-Jan-2005 Release 1 First Release. Change Designator 8/9 STC08DE150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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