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| Preliminary data SPD11N10 SPU11N10 Product Summary VDS RDS(on) ID 100 170 10.5 P-TO252 SIPMOS Power-Transistor Feature N-Channel Enhancement mode 175C operating temperature Avalanche rated dv/dt rated P-TO251 V m A Type SPD11N10 SPU11N10 Package P-TO252 P-TO251 Ordering Code Q67042-S4121 Q67042-S4122 Marking 11N10 11N10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 10.5 7.8 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 20 50 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =10.5 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.5A, VDS =80V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-31 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPD11N10 SPU11N10 Values min. typ. max. 3 100 75 50 K/W Unit Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 21 A Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25C VDS =100V, VGS =0V, Tj =125C A 0.01 1 1 137 1 100 100 170 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID =7.8A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =7.8A SPD11N10 SPU11N10 Values min. typ. 5.8 320 72 43 8.2 46 29 23 max. 400 90 54 10 58 36 29 ns S pF Unit Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =50V, VGS=10V, ID =10.5A, RG =28 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =10.5A VR =50V, IF =lS , diF /dt=100A/s Qgs Qgd Qg VDD =80V, ID =10.5A VDD =80V, ID =10.5A, VGS =0 to 10V V(plateau) VDD =80V, ID=10.5A IS ISM TC=25C Page 3 Transconductance gfs VDS 2*ID *RDS(on)max , 2.6 - - 2.3 7.8 14.6 6.4 2.9 9.8 18.3 - nC V - 0.93 57 134 10.5 41.2 1.25 71 167 A V ns nC 2002-01-31 Preliminary data 1 Power dissipation Ptot = f (TC ) 55 SPD11N10 SPD11N10 SPU11N10 2 Drain current ID = f (TC ) parameter: VGS 10 V 12 SPD11N10 W 45 40 A 10 9 8 Ptot ID 35 30 7 6 25 5 20 15 10 5 0 0 20 40 60 80 100 120 140 160 C 190 4 3 2 1 0 0 20 40 60 80 100 120 140 160 C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 2 SPD11N10 tp = 4.9s 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD11N10 K/W /I D A DS on ) = V 10 s 10 0 ID R 10 1 Z thJC DS ( 10 -1 100 s 10 10 0 1 ms -2 10 ms single pulse 10 -3 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 VDS Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-01-31 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 25 h g SPD11N10 SPU11N10 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 400 VGS[V]= m a b c d e f A f 15 e a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 RDS(on) 300 ID 250 g 200 h 10 d c 150 100 VGS[V]= 5 b 50 a a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 0 0 2 4 6 8 10 V 13 0 0 4 8 12 16 20 A 28 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 12 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 7 A g fs 4 3 2 1 1 2 3 4 5 7 0 0 8 ID 6 4 2 0 0 S 5 V 1 2 3 4 5 6 7 8 A 10 VGS Page 5 ID 2002-01-31 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 7.8 A, VGS = 10 V SPD11N10 SPD11N10 SPU11N10 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 4 750 m V 600 RDS(on) ID =1mA 500 450 400 350 300 250 200 150 100 50 0 -60 -20 20 60 100 140 C VGS(th) 98% typ 550 3 2.5 2 ID =21A 1.5 -65 200 -35 -5 25 55 85 115 C 175 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 2 SPD11N10 A pF Ciss 10 1 C 10 2 Coss Crss 10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 10 -1 0 IF 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-01-31 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 60 SPD11N10 SPU11N10 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 10.5 A pulsed 16 SPD11N10 mJ V 50 45 40 35 30 25 6 20 15 10 2 5 0 25 45 65 85 105 125 145 4 8 12 VGS EAS C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPD11N10 120 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C 200 Tj Page 7 par.: ID = 10.5 A , VDD = 25 V, RGS = 25 0,2 VDS max 10 0,8 VDS max 0 0 4 8 12 16 nC 24 QGate 2002-01-31 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. SPD11N10 SPU11N10 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-31 |
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