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| Rev. 2.0 SPN03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 0.7 SOT-223 4 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances V A 3 2 1 VPS05163 Type Package Ordering Code SPN03N60C3 SOT-223 Q67040S4552 Marking 03N60C3 Maximum Ratings Parameter Continuous drain current TA = 25 C TA = 70 C Pulsed drain current, tp limited by Tjmax TA = 25 C Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TA = 25C Symbol ID Value 0.7 0.4 Unit A ID puls 3 3.2 20 30 1.8 -55... +150 W C V Avalanche current, repetitive tAR limited by Tjmax IAR VGS VGS Ptot Tj , Tstg Operating and storage temperature Page 1 2004-03-01 Rev. 2.0 SPN03N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 3.2 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=135, VGS=V DS VDS=600V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJS RthJA - Values typ. 25 110 max. 70 Unit K/W Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=3.2A A 1 70 100 1.4 nA Gate-source leakage current IGSS VGS=30V, VDS=0V VGS=10V, ID=2A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2004-03-01 Rev. 2.0 SPN03N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=0.4A V GS=0V, V DS=25V, f=1MHz Values typ. 3.4 400 150 5 12 26 7 3 64 12 max. 100 20 - Unit S pF Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf V GS=0V, V DS=0V to 480V pF V DD=350V, V GS=0/10V, ID=0.7A, RG=20 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd VDD=420V, ID=0.7A - 2 6 13 5.5 17 - nC Gate charge total Gate plateau voltage Qg VDD=420V, ID=0.7A, VGS=0 to 10V V(plateau) VDD=420V, ID=0.7A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2004-03-01 Rev. 2.0 SPN03N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=420V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TA =25C Values typ. 1 250 1.8 15 max. 0.7 3 1.2 400 540 - Unit A V ns C A A/s Page 4 2004-03-01 Rev. 2.0 SPN03N60C3 1 Power dissipation Ptot = f (TA) 1.9 SPN03N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA=25C 10 1 W 1.6 1.4 A 10 0 Ptot 1 0.8 0.6 ID 10 -1 1.2 10 -2 0.4 0.2 0 0 10 -3 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 20 40 60 80 100 120 C TA 160 10 1 10 2 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 2 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 11 K/W 10 1 A 9 8 10 0 ID 7 6 5 4 3 2 1 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 20V 7V 6.5V 6V 5.5V 5V 4.5V 4V Z thJC 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 0 0 4 8 12 16 V 24 tp VDS Page 5 2004-03-01 Rev. 2.0 SPN03N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 6 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 10 A ID 4 20V 7V 6V 5.5V 5V 4.5V 4V 3.5V 8 7 6 5 4V 4.5V 5V 5.5V 6V 6.5V 8V 20V 3 RDS(on) V 2 4 3 1 2 0 0 1 0 4 8 12 16 24 1 2 3 4 5 6 VDS A ID 8 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.4 A, VGS = 10 V 8 SPN03N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 11 6 A 25C 9 RDS(on) 8 5 ID 7 6 150C 4 5 3 4 3 typ 1 2 1 -20 20 60 100 C 2 98% 0 -60 180 0 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2004-03-01 Rev. 2.0 SPN03N60C3 9 Typ. gate charge VGS = f (QGate) parameter: ID = 0.7 A pulsed 16 V SPN03N60C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 SPN03N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 0 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 16 nC 10 -2 0 10 4 2 0 0 2 4 6 8 10 12 14 20 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, ID=0.7A 1500 12 Typ. switching time t = f (RG ), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=0.7 A 500 A/s 1200 1050 ns 400 350 300 250 200 150 di/dt(on) di/dt 900 750 600 450 300 150 0 0 di/dt(off) t td(off) tf td(on) tr 100 50 0 0 40 80 120 160 220 RG 20 40 60 80 100 120 140 160 200 RG Page 7 2004-03-01 Rev. 2.0 SPN03N60C3 13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS=380V, VGS=0/+13V, RG =20 100 14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=0.7A 90 ns 80 70 60 50 V/ns 70 dv/dt 60 50 40 t 40 30 20 10 0 0 td(off) tf td(on) tr dv/dt(on) 30 20 dv/dt(off) 10 0 0 0.5 1 1.5 2 2.5 A ID 3.5 20 40 60 80 100 120 140 160 200 RG 15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =20 0.01 16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=0.7A 0.06 mWs 0.008 0.007 *) Eon includes SDP06S60 diode commutation losses. mWs 0.048 *) E on includes SDP06S60 diode commutation losses. Eoff 0.042 E 0.006 0.005 0.004 0.003 0.002 0.001 0 0 E Eon* 0.036 Eon* 0.03 Eoff 0.024 0.018 0.012 0.006 0 0 0.5 1 1.5 2 2.5 A ID 3.5 40 80 120 160 220 RG Page 8 2004-03-01 Rev. 2.0 SPN03N60C3 17 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPN03N60C3 18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 V pF V(BR)DSS 680 660 640 620 600 10 3 Ciss C 10 2 Coss 10 1 580 560 540 -60 10 0 0 Crss -20 20 60 100 C 180 100 200 300 400 V 600 Tj VDS 19 Typ. Coss stored energy Eoss=f(VDS) 2.5 J Eoss 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 9 2004-03-01 Rev. 2.0 SPN03N60C3 Definition of diodes switching characteristics Page 10 2004-03-01 Rev. 2.0 SPN03N60C3 SOT223 A 6.5 0.2 3 0.1 0.1 max 1.6 0.1 B 7 0.3 15max 4 1 0.7 0.1 2 3 2.3 4.6 0.5 min 0.28 0.04 0.25 M A 0.25 Page 11 M B 2004-03-01 3.5 0.2 +0.2 acc. to DIN 6784 Rev. 2.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPN03N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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