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| Final data SPD04N80C3 VDS RDS(on) ID 800 1.3 4 V A Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO252-3-1 Type SPD04N80C3 Package P-TO252-3-1 Ordering Code Q47040-S4563 Marking 04N80C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID Value 4 2.5 Unit A Pulsed drain current, t p limited by Tjmax Avalanche energy, single pulse ID=0.8A, VDD=50V ID puls EAS EAR IAR VGS Ptot Tj , Tstg 12 170 0.1 4 20 63 -55... +150 A V W C mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=4A, V DD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Power dissipation, TC = 25C Operating and storage temperature Page 1 2003-07-02 Final data Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 4 A, Tj = 125 C SPD04N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Tsold Symbol min. RthJC RthJA 75 50 260 C Values typ. max. 2 K/W Unit Electrical Characteristics Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=240, VGS=V DS V DS=800V, V GS=0V, Tj=25C, Tj=150C Values typ. 870 3 0.5 1.1 3 0.7 max. 3.9 800 2.1 - Unit V V(BR)DS VGS=0V, ID=4A A 10 100 100 1.3 nA Gate-source leakage current IGSS V GS=20V, V DS=0V V GS=10V, ID =2.5A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-07-02 Final data SPD04N80C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=2.5A VGS=0V, VDS=25V, f=1MHz Values typ. 3 570 240 12 15.6 33.7 25 15 65 12 max. 75 16 - Unit S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time VGS=0V, VDS=0V to 480V pF td(on) tr td(off) tf VDD=400V, VGS=0/10V, ID=4A, RG=22 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg V DD=640V, ID=4A - 2.4 11 20 6 26 - nC V DD=640V, ID=4A, V GS=0 to 10V V(plateau) VDD=640V, ID=4A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220C, reflow 4C 5C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-07-02 Final data SPD04N80C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt V GS=0V, IF=IS V R=640V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 520 4 12 300 max. 4 12 1.2 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.033 0.063 0.113 0.432 0.423 0.14 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00008691 0.0003336 0.0004755 0.001405 0.003503 0.036 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-07-02 Final data SPD04N80C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) 70 SPD04N80C3 ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 W A 60 55 50 10 1 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 10 -1 10 0 ID 45 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp) parameter: D = tp/T 10 1 ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 13 K/W A 11 10 0 10 9 20V 8V 7V ZthJC ID 8 7 6.5V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 5 4 3 2 1 6V 5.5V 5V 4V 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 4 8 12 16 20 26 V VDS Page 5 2003-07-02 Final data SPD04N80C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 6.5 RDS(on)=f(ID) parameter: Tj=150C, VGS 15 A 5.5 5 4.5 RDS(on) 20V 6.5V 6V 5.5V 13 12 11 10 9 8 5V 4V 4.5V ID 4 3.5 3 2.5 2 1.5 1 0.5 0 0 4 8 12 16 5V 7 6 5.5V 4.5V 5 4 6V 20V 4V 3 26 V VDS 2 0 1 2 3 4 5 20 A 6.5 ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) parameter : ID = 2.5 A, VGS = 10 V 7.5 SPD04N80C3 ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 13 A 11 25C 6 R DS(on) 10 9 5.5 ID 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 C 8 7 6 5 4 150C 98% typ 3 2 1 180 0 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2003-07-02 Final data SPD04N80C3 9 Typ. gate charge VGS = f (QGate) 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPD04N80C3 parameter: ID = 4 A pulsed 16 V SPD04N80C3 A 12 0.2 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0.8 VDS max 4 2 10 -1 0 0 0 4 8 12 16 20 24 28 nC 34 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) par.: Tj 150 C 4 EAS = f (Tj) par.: ID = 0.8 A, VDD = 50 V 180 A mJ 3 140 E AS Tj(START)=25C Tj(START)=125C IAR 120 100 2.5 2 80 1.5 60 40 20 0 25 1 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 4 50 75 100 C Tj 150 Page 7 2003-07-02 Final data SPD04N80C3 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 980 SPD04N80C3 14 Avalanche power losses PAR = f (f ) parameter: EAR =0.1mJ 100 V 940 W 80 70 60 50 40 30 20 10 04 10 5 6 V(BR)DSS 920 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 180 PAR 900 10 Hz f 10 Tj 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 Eoss=f(VDS) 4.5 pF J 10 3 Ciss E oss 3.5 3 2.5 C 10 2 2 Coss 10 1 1.5 1 0.5 Crss 10 0 0 100 200 300 400 500 600 800 V VDS 0 0 150 300 450 600 825 V VDS Page 8 2003-07-02 Final data SPD04N80C3 Definition of diodes switching characteristics Page 9 2003-07-02 Final data SPD04N80C3 P-TO-252-3-1 (D-PAK) Page 10 2003-07-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD04N80C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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