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| SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure2. Fine adjustment of the oscillation wavelength is possible by controlling the temperature using the built-in TE cooler (Peltier element). 1 MOCVD: Metal Organic Chemical Vapor Deposition 2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features * High power Recommended optical power output: Po = 1.0W * Low operating current: Iop = 1.4A (Po = 1.0W) * Flat package with built-in photo diode, TE cooler, and thermistor Applications * Solid state laser excitation * Medical use * Material processes * Measurement Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 1.0W, Tth = 25C Absolute Maximum Ratings (Tth = 25C) * Optical power output Po * Reverse voltage VR LD PD * Operating temperature (Tth) Topr * Storage temperature Tstg Equivalent Circuit TE Cooler N P TH LD PD 1 2 3 4 5 6 7 8 Pin Configuration (Top View) No. 1 2 3 4 5 6 7 8 Function TE cooler (negative) Thermistor lead 1 Thermistor lead 2 Laser diode (anode) Laser diode (cathode) Photodiode (cathode) Photodiode (anode) TE cooler (positive) 1.1 2 15 -10 to +30 -40 to +85 W V V C C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E93208B02-PS SLD323XT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Monitor current Radiation angle Perpendicular Parallel Positional accuracy Differential efficiency Thermistor resistance Position Angle Symbol Ith Iop Vop p Imon // X, Y D Rth PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W VR = 10V PO = 1.0W Conditions (Tth: Thermistor temperature, Tth = 25C) Min. Typ. 0.3 1.4 2.1 790 0.3 20 4 1.5 30 9 Max. 0.5 2.0 3.0 840 6.0 40 17 100 3 PO = 1.0W Tth = 25C 0.5 0.9 10 Unit A A V nm mA degree degree m degree W/A k PO = 1.0W Wavelength Selection Classification Type SLD323XT-1 SLD323XT-2 SLD323XT-3 Type SLD323XT-21 SLD323XT-24 SLD323XT-25 Wavelength (nm) 795 5 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device -2- SLD323XT Example of Representative Characteristics Optical power output vs. Forward current characteristics 1500 Tth = 25C Tth = 15C Po - Optical power output [mW] Po - Optical power output [mW] 1200 Tth = 0C Tth = -10C 900 Tth = 25C Tth = 30C 1000 Tth = 0C Tth = -10C Tth = 30C Optical power output vs. Monitor current characteristics 600 500 300 0 400 800 1200 1600 2000 0 0 Imon - Monitor current [mA] 1.5 IF - Forward current [mA] Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (Parallel to junction) Tth = 25C Ith - Threshold current [mA] 500 Radiation intensity (optional scale) PO = 1000mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW 100 -10 0 10 20 30 -90 -60 -30 0 30 60 90 Tth - Thermistor temperature [C] Angle [degree] Power dependence of far field pattern (Perpendicular to junction) Tth = 25C Radiation intensity (optional scale) Tempareture dependence of far field pattern (Parallel to junction) PO = 1000mW Radiation intensity (optional scale) PO = 1000mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW Tth = 25C Tth = 10C Tth = -5C -90 -60 -30 0 30 60 90 -90 -60 -30 0 30 60 90 Angle [degree] Angle [degree] -3- SLD323XT Temperature dependence of far field pattern (Perpendicular to junction) PO = 1000mW Radiation intensity (optional scale) 820 Dependence of wavelength Po = 1000mW p - Wavelength [nm] Tth = 25C Tth = 10C Tth = -5C -60 -30 0 30 60 90 810 800 -90 790 -10 0 10 20 30 Angle [degree] Tth - Thermistor temperature [C] Thermistor characteristics Differential efficiency vs. Temperature characteristics 50 D - Differential efficiency [mW/mA] 1.0 Rth - Thermistor resistance [k] -10 0 10 20 30 Tth - Thermistor temperature [C] 10 0.5 5 0 1 -10 0 10 20 30 40 50 60 70 Tth - Thermistor temperature [C] TE cooler characteristics TE cooler characteristics 1 10 Tc = 33C 10 Tth = 25C TE cooler characteristics 2 IT = 2.5A T VS V Q - Absorbed heat [W] Q - Absorbed heat [W] VT - Pin voltage [V] 2.0A 5 5 4 5 1.5A 5 4 1.5A 1.0A 3 2 1.0A T VS 3 2 1 0 0.5A 0. 5A 2.0A 2. 5A 0.5A 1 0 0 0. 1. 1. 5A 0A 5A Q 2.0A 2. 5A 0 0 50 100 50 100 T - Temperature difference [C] T: Tc - Tth Tth: Thermistor temperature Tc: Case temperature T - Temperature difference [C] -4- VT - Pin voltage [V] T VS VT IT = 2.5A 2.0A T VS 5A 1. Q 1. 0A SLD323XT Power dependence of spectrum 1.0 Tth = 25C Po = 400mW 0.8 Relative rediant intensity Relative rediant intensity 1.0 Tth = 25C Po = 600mW 0.8 0.6 0.6 0.4 0.4 0.2 0.2 802 804 806 808 810 802 804 806 808 810 Wavelength [nm] Wavelength [nm] 1.0 Tth = 25C Po = 800mW 0.8 Relative rediant intensity Relative rediant intensity 1.0 Tth = 25C Po = 1000mW 0.8 0.6 0.6 0.4 0.4 0.2 0.2 802 804 806 808 810 802 804 806 808 810 Wavelength [nm] Wavelength [nm] -5- SLD323XT Temperature dependence of spectrum (Po = 1000mW) 1.0 Tth = -10C 0.8 Relative radiant intensity Relative radiant intensity 1.0 Tth = 0C 0.8 0.6 0.6 0.4 0.4 0.2 0.2 790 795 800 805 810 815 820 790 795 800 805 810 815 820 Wavelength [nm] Wavelength [nm] 1.0 Tth = 25C 0.8 Relative radiant intensity Relative radiant intensity 1.0 Tth = 30C 0.8 0.6 0.6 0.4 0.4 0.2 0.2 790 795 800 805 810 815 820 790 795 800 805 810 815 820 Wavelength [nm] Wavelength [nm] -6- SLD323XT Package Outline Unit: mm M - 273(LO - 10) + 0.05 4 - O3.0 0 33.0 0.05 14.0 O5.0 Window Glass 15.0 0.05 * 7.5 0.1 4 - R1.2 0.3 8 - O0.6 2.54 38.0 0.5 0.65MAX LD Chip 19.0 28.0 0.5 + 2.0 8.0 - 1.0 Reference Plane 28.0 0.5 7.5 0.2 11.35 0.1 10.4 *16.5 0.1 *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE EIAJ CODE JEDEC CODE M-273(LO-10) PACKAGE WEIGHT 43g -7- 3.0 Sony Corporation |
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