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| SLD104AV GaAlAs Laser Diode Description The SLD104AV is a low noise GaAlAs laser diode developed for CD. Features * High temperature operation * Low noise * Small package ( 5.6 mm) Applications * Pickup for CD players Structure * GaAlAs double hetero structured laser diode * Pin photodiode for optical power output monitor M-260 Absolute Maximum Ratings (Ta=25 C) * Optical power output PO 5 mV * Reverse voltage VR LD 2 V PD 15 V * Operating temperature Topr -10 to +60 C * Storage temperature Tstg -40 to +85 C Connection Diagram Pin Configuration COMMON 3 2 1 PD 2 1 LD 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E96Y23-TE SLD104AV Optical and Electrical Characteristics Item Threshold current Operating current Operating voltage Oscillation wavelength Monitor current Parallel radiation angle Perpendicular radiation angle Parallel radiation angle symmetry Perpendicular radiation angle accuracy Positional accuracy Differential efficiency Astigmatism S/N ratio PD dark current PD capacitance between pins Symbol Ith Iop Vop Im // SR 1 (TC=25 C) Conditions (Tc=25 C) PO=3 mW PO=3 mW PO=3 mW PO=3 mW Vr (Pin)=5 V PO=3 mW 1.7 760 0.08 9 20 Min. Typ. 45 52 1.9 780 0.15 18 35 TC : Case temperature Max. 60 65 2.5 800 0.4 25 45 20 3 150 0.7 -20 Unit mA mA V nm mA deg deg % deg m mW/mA m dB 150 30 nA pF PO=3 mW CW, PO=3 mW X, Y, Z D As S/N ID Cr PO=3 mW PO=3 mW fc=720 kHz f=30 kHz PO=4 mW Vr (Pin)=5 V Vr (Pin)=5 V, f=1 MHz 0.2 -34 0.45 -27 88 Power SR SR = SL SR | SL - SR | SL + SR -7 0 7 || --2-- SLD104AV Example of Representative Characteristics Threshold current vs. Temperature characteristics 100 1.0 PO=3mW 50 45 Far field pattern (FFP) Ith-Threshold current (mA) Relative radiant intensity 0.5 // 10 -10 0 25 50 Tc-Case temperature (C) 100 0 -40 -20 0 20 Angle (degree) 40 PIN diode voltage current characteristics 0.25 (mA) I Tc=25C PO=3mW Optical power output vs. Forward current characteristics 5 Tc=25C 4 Tc=50C PO-Optical power output V 3 -1.0 0 1.0 (V) 2 1 -0.25 0 20 40 60 80 IF-Forward current (mA) 100 Relative radiant intensity vs. Wavelength characteristics PO=3mW Relative radiant intensity vs. Wavelength characteristics PO=5mW Relative radiant intensity 778 779 780 781 -Wavelength (nm) 782 Relative radiant intensity 780 781 782 783 -Wavelength (nm) 784 --3-- SLD104AV Package Outline Unit : mm M-260 Reference Slot 0.5 1.0 3 90 2 1 0 5.6 - 0.05 4.4 MAX 3.7 MAX 0.5 MIN 0.4 23 1 3 - 0.45 PCD 2.0 LD Chip & Photo Diode Optical Distance = 1.35 0.15 SONY CODE EIAJ CODE JEDEC CODE M-260 6.5 1.2 0.1 Reference Plane 2.6 MAX 1.26 0.25 PACKAGE WEIGHT 0.3g --4-- |
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