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| Si7425DN New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.016 @ VGS = -4.5 V -12 0.022 @ VGS = -2.5 V 0.029 @ VGS = -1.8 V FEATURES ID (A) -12.6 -10.8 -3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package - Low Thermal Resistance, RthJC - Low 1.07-mm Profile APPLICATIONS D Load Switch D PA Switch D Battery Switch PowerPAKr 1212-8 S 3.30 mm S 1 2 S 3 S 3.30 mm 4 D 8 7 D 6 D 5 D G G D Bottom View Ordering Information: Si7425DN-T1--E3 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State -12 "8 Unit V -12.6 -9.1 -25 -3.0 3.6 1.9 -55 to 150 -8.3 -6.0 A -1.3 1.5 0.8 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72400 S-32411--Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 28 65 2.9 Maximum 35 81 3.8 Unit _C/W C/W 1 Si7425DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -300 mA VDS = 0 V, VGS = "8 V VDS = -12 V, VGS = 0 V VDS = -12 V, VGS = 0 V, TJ = 85_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -12.6 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -10.8 A VGS = -1.8 V, ID = -3.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -6 V, ID = -12.6 A IS = -3.0 A, VGS = 0 V -25 0.013 0.017 0.023 38 -0.7 -1.2 0.016 0.022 0.029 S V W -0.40 -1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -3.2 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W f = 1 MHz VDS = -6 V, VGS = -4.5 V, ID = -12.6 A 26 4.1 7.0 5.0 30 55 130 100 52 45 75 260 225 80 ns W 39 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 5 thru 2 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25 25 Transfer Characteristics 15 1.5 V 10 15 10 TC = 125_C 5 25_C -55_C 0 0.0 5 1V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 72400 S-32411--Rev. B, 24-Nov-03 www.vishay.com 2 Si7425DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.08 0.07 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 0 0 2 4 6 8 10 12 3200 Ciss 2400 Vishay Siliconix On-Resistance vs. Drain Current 4000 Capacitance 1600 Coss 800 Crss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 12.6 A Gate Charge 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 12.6 A 3 2 1 0 0 5 10 15 20 25 30 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance (W) (Normalized) 4 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.08 0.07 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.06 0.05 0.04 0.03 0.02 0.01 ID = 3.5 A ID = 12.6 A TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72400 S-32411--Rev. B, 24-Nov-03 www.vishay.com 3 Si7425DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 -0.1 -0.2 -50 10 ID = 300 mA 40 50 Single Pulse Power, Juncion-To-Ambient Power (W) 30 20 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72400 S-32411--Rev. B, 24-Nov-03 Si7425DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72400 S-32411--Rev. B, 24-Nov-03 www.vishay.com 5 |
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