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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFRC9130S.5B 10 AMP /100 Volts 300 m Radiation Tolerant P-Channel MOSFET Features: 2/ DESIGNER'S DATA SHEET POWERShield Technology SFRC9130 __ B__ TM PS-Hard Radiation Hardened MOSFETs Screening __ = Commercial TX = TX Level TXV = TXV Level S = S Level Package: S.5 = SMD.5 * * * * * * * Advanced POWERShieldTM Technology TID 100K Rad Excellent high temperature stability Hermetically Sealed Power Package Low Total Gate Charge Fast Switching Replacement for IRHNJ9130 and F9130 types Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) Max. Avalanche current Repetitive Avalanche Energy Single Pulse Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) PACKAGE OUTLINE: SMD.5 PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE .408 .392 .304 .288 3x .020 .010 Symbol VDSS VGS @ TC = 25C @ TC = 100C @ L= 5.0 mH @ L= 5.0 mH @ L= 5.0 mH @ TC = 25C ID1 ID2 IAR EAR EAS PD TOP & TSTG R0JC Value -100 20 10 7 9.8 5.2 320 75 -55 to +150 1.65 .103 .087 Units V V A A mJ mJ W C C/W .030 MIN 2x .030 MIN .128 .112 .233 .217 2x .010 MAX .304 .288 .145 .115 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FR0016A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFRC9130S.5B Symbol VGS = 0V, ID =0.25 mA BVDSS Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source Breakdown Voltage Temperature Coefficient Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Min -100 -- -- -- -2.0 -- -- -- 4 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max -- -0.1 240 300 -- 5 0.01 1 5.2 30 5.5 1.5 15 25 45 25 2.00 120 0.55 800 160 60 -- -- 300 -- -4.0 100 10 100 -- 38 -- -- 35 55 100 60 4.00 350 2.5 1035 240 90 Units V V/ oC m V nA A A Mho nC VGS = 0V, ID =0.25 mA dBVDSS/dT VGS = 10V, ID = 5A, Tj= 25oC VGS = 10V, ID = 10A, Tj= 25oC VDS = 5 V, ID = 250A VGS = 20V VDS = -100V, VGS = 0V, Tj = 25oC VDS = -80V, VGS = 0V, Tj = 125oC VDS = 40V, ID = 5A, Tj = 25oC VGS = 10V VDS = 80V ID = 10A VGS = 10V VDS = 50V ID = 10A RG = 12 IF = 10A, VGS = 0V IF = 10A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Qrr Ciss Coss Crss nsec V nsec C pF NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FR0016A DOC |
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