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| SFH 214 SFH 214 FA Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 214) und bei 880 nm (SFH 214 FA) q Kurze Schaltzeit (typ. 5 ns) q 5 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" q Schnelle Lichtschranken fur Gleich- und Features q Especially suitable for applications from 400 nm to 1100 nm (SFH 214) and of 880 nm (SFH 214 FA) q Short switching time (typ. 5 ns) q 5 mm LED plastic package q Also available on tape Applications q q q q Wechsellichtbetrieb q LWL Industrial electronics For control and drive circuits Photointerrupters Fiber optic transmission systems Typ Type SFH 214 SFH 214 FA Bestellnummer Ordering Code Q62702-P922 Q62702-P1672 Semiconductor Group 1 03.96 feof6652 feo06652 SFH 214 SFH 214 FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Wert Value - 55 ... + 100 300 Einheit Unit C C Top; Tstg TS VR Ptot 50 100 V mW Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 870 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Symbol Symbol SFH 214 Wert Value SFH 214 FA Einheit Unit S S S max 45 ( 30) - 850 - 25 ( 20) 900 nA/Ix A nm nm 400 ... 1100 750 ... 1100 A LxB LxW H 1 1x1 1 1x1 mm2 mm x mm 3.4 ... 4.0 3.4 ... 4.0 mm Semiconductor Group 2 SFH 214 SFH 214 FA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Halbwinkel Half angle Dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 870 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 870 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 20 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 80 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 870 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit Symbol Symbol SFH 214 40 1 ( 5) 0.62 0.89 Wert Value SFH 214 FA 40 1 ( 5) 0.59 0.86 Grad deg. nA A/W Electrons Photon Einheit Unit IR S VO VO 380 ( 300) - - 340 ( 290) mV mV ISC ISC tr, tf 42 - 5 - 12 5 A A ns VF C0 TCV TCI 1.3 11 - 2.6 1.3 11 - 2.6 V pF mV/K %/K 0.18 - - 0.2 W Hz cm * Hz W NEP 2.9 x 10- 14 2.9 x 10- 14 D* 3.5 x 1012 3.5 x 1012 Semiconductor Group 3 SFH 214 SFH 214 FA Relative spectral sensitivity SFH 214 Srel = f () Relative spectral sensitivity SFH 214 FA Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) SFH 214 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) SFH 214 FA Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Directional characteristics Srel = f () Semiconductor Group 4 |
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