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| Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF130/5 8 AMP / 100 Volts 0.18 N-Channel Power MOSFET Features: * * * * * * * * * * * * Rugged Construction with Poly Silicon Gate Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package Available in both hot case and isolated versions Ideal for low power applications TX, TXV, Space Level Screening Available 2/ Replacement for IRFF130 Types DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFF130 __ __ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level Package /5= TO-5 TO-5 Maximum Ratings 3/ Drain - Source Voltage Gate - Source Voltage Continuous Collector Current Power Dissipation Operating & Storage Temperature Thermal Resistance Junction to Case Single Pulse Avalanche Energy NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25C. TO-5 Case Outline: Symbol VDS VGS TC = 25C TC = 100C TC = 25C TA = 25C ID PD Top & Tstg RJC EAS Value 100 20 8 5 25 19 -55 to +150 5 75 Units Volts Volts Amps Watts C C/W mJ NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF130/5 Symbol BVDSS BVDSS Tj ID=5A ID=8A RDS(on) VGS(th) gfs Electrical Characteristics @ TJ = 25C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 A) Temperature Coefficient of Breakdown Voltage Drain to Source On State Resistance (VGS=10 V ) Gate Threshold Voltage (VDS=VGS, ID=250 A ) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 9A) Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25C) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ=25C IF=10A Di/dt=100A/sec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 50% rated VDS Rated ID VDD=50% Rated VDS ID = 8A RG= 7.5 Min 100 -- -- 2.0 3 -- -- -- -- 12 1 3.8 -- -- -- -- -- -- -- -- -- -- Typ -- 100 0.13 0.14 2.8 7 -- -- -- -- 17 3.7 7.0 9.5 42 22 25 1 120 0.7 650 250 44 Max -- -- 0.18 0.21 4.0 -- 25 250 +100 -100 28 6.3 16.6 30 75 40 45 1.5 300 3 -- -- -- Units Volts mV/ C V mho A IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VSD trr QRR Ciss Coss Crss nA nC nsec V nsec nC pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Number: SFF130/5 PIN ASSIGNMENT (Standard) Package TO-5 Drain Pin 3 Source Pin 1 Gate Pin 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D DOC |
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