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  Datasheet File OCR Text:
 SDBS12 THRU SDBS110
1.0 AMP. Schottky Barrier Rectifiers
Voltage Range 20 to 100 Volts Current 1.0 Ampere
Features
Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature soldering: o 260 C/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208
DB
DBS
.047(1.20) .040(1.02) .205(5.2) .195(5.0)
Mechanical Data
Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band
.404(10.3) .386(9.80) .335(8.51) .320(8.13) 45 0 .255(6.5) .245(6.2) .013(0.33) .0088(0.22)
.130(3.30) .120(3.05)
.060(1.53) .040(1.02)
.013(0.33) .003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SDB SDB SDB Type Number
SDB SDB SDB SDB 12 13 14 15 16 19 110 SDBS SDBS SDBS SDBS SDBS SDBS SDBS 12 13 14 15 16 19 110
Units
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum DC Reverse Current @ TA =25 at Rated DC Blocking Voltage @ TA=100 Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 )
VRRM VRMS VDC I(AV) IFSM VF IR
20 14 20
30 21 30
40 28 40
50 35 50 1.0 30
60 42 60
90 63 90
100 70 100
V V V A A
0.5 0.4 10
0.75 5.0
0.80 0.05 0.5
V mA mA pF /W /W
Cj 50 RJL 28 88 RJA Operating Temperature Range TJ -65 to +125 -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.5 x 0.5"(12 x 12mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- 50 -
RATINGS AND CHARACTERISTIC CURVES (SDBS12 THRU SDBS110)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
1.0 50 RESISTIVE OR INDUCTIVE LOAD SDBS12- SDBS14 SDBS15-SDBS110
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
40
AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method
30
0.5
20
10
PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 130
o
0 140 150 160 170 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
Tj=25 0C
INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A)
10.0 100
SDBS12-SDBS14
SDBS12-SDBS14
SDBS15-SDBS16
Tj=100 0C
10
1 SDBS19-SDBS110
SDBS15-SDBS16
1
SDBS19-SDBS110
0.1
Tj=25 0C
0.1
PULSE WIDTH=300 S 1% DUTY CYCLE
SDBS12-SDBS14
0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) 0.01 0 20 40 60 80
SDBS15-SDBS110
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
400
Tj=25 0C f=1.0MHz Vsig=50mVp-p
JUNCTION CAPACITANCE.(pF)
100
10
.1
1.0 REVERSE VOLTAGE. (V)
10
100
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