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RPT-37PB3F Sensors Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. It is possible to distinguish the polarity by the shape of ramp type. !Applications Optical control equipment Receiver for sensors !External dimensions (Units : mm) 3.80.3 3.10.2 5.20.3 1.3 !Features 1) High sensitivity. 2) Almost no effect from stray light. Notes : 1. Unspecfied tolerance shall be 0.2. 2. Measurement in the bracket are that of lead pin at base the mold. 3. Dimension in parenthesis are show for reference. Max.1 2 4-0.6 2- 0.5 1 (2.5) 2.51 Min.24 Internal connection diagram 1 2 Emitter Collector !Absolute maximum ratings (Ta = 25C) Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Limits 32 5 30 150 -25~+85 -30~+100 Unit V V mA mW C C !Electrical and optical characteristics (Ta = 25C) Parameter Light current Dark current Peak sensitivity wavelength Collector-emitter saturation voltage Half-angle Response time Symbol IC ICEO Min. 2.0 - - - - - Typ. - - 800 - 36 10 Max. - 0.5 - 0.4 - - Unit mA A nm V deg s Conditions VCE=5V, E=500LX VCE=10V(Black box) - IC=1mA, E=500LX - VCC=5V, IC=1mA, RL=100 P VCE(sat) 1 / 2 tr*tf 1/2 RPT-37PB3F Sensors !Electrical and optical characteristic curves 1000 8 RELATIVE LIGHT CURRENT : IC (%) VCE=5V DARK CURRENT : ICEO (nA) 1000 500 LIGHT CURRENT : IC (mA) 6 100 VCE=10V VCE=20V VCE=30V 200 100 50 10 4 1 20 10 -25 0 25 50 75 100 2 0.1 -25 0 25 50 75 100 0 250 500 750 1000 1250 AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) ILLUMINANCE : E (Lx) Fig.1 Dark current vs. ambient temperature Fig.2 Relative output vs. ambient temperature Fig.3 Light current vs. irradiance 100 10 RELATIVE SENSITIVITY : IC (%) LIGHT CURRENT : IC (mA) COLLECTOR DISSIPATION : PC (mW) 160 8 E=1000Lux 750Lux 75 120 6 50 4 80 500Lux 250Lux 25 2 0 0 40 2 4 6 8 10 12 14 16 0 400 600 800 1000 1200 1600 0 -25 0 25 50 75 100 COLLECTOR-EMITTER VOLTAGE : VCE (V) OPTICAL WAVELENGTH : (nm) AMBIENT TEMPERATURE : Ta (C) Fig.4 Output characteristics Fig.5 Spectral sensitivity Fig.6 Collector dissipation vs. ambient temperature 1000 30 40 80 100 RL=1k RL=500 50 60 60 40 70 80 90 100 20 10 RL=100 1 0.1 1 10 80 60 40 20 0 10 20 30 40 50 60 70 80 90 ANGULAR DISPLACEMENT (deg) COLLECTOR CURRENT : IC (mA) RELATIVE LUMINOUS INTENSITY (%) Fig.7 Response time vs. collector current Fig.8 Directional pattern RELATIVE LUMINOUS INTENSITY (%) Ta=25C VCE=5V 20 10 0 100 RESPONSE TIME : tr (s) 2/2 |
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