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| RH27C Precision Operational Amplifier DESCRIPTIO ABSOLUTE AXI U RATI GS The RH27C combines very low noise with excellent precision and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nVHz 10Hz noise and low offset voltage make the RH27C an excellent choice for low frequency military instrumentation applications. The wafer lots are processed to LTC's in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet. Supply Voltage ..................................................... 22V Internal Power Dissipation ................................ 500mW Input Voltage ........................... Equal to Supply Voltage Output Short-Circuit Duration ......................... Indefinite Differential Input Current (Note 8) ..................... 25mA Operating Temperature Range ............. - 55C to 125C Junction Temperature Range ............... - 55C to 150C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec)................. 300C , LTC and LT are registered trademarks of Linear Technology Corporation. BUR -I CIRCUIT 10k 20V 20V 2 200 7 6 PACKAGE/ORDER I FOR ATIO TOP VIEW VOS TRIM 8 VOS TRIM 1 + TOP VIEW 7 - V+ 6 OUT VOS TRIM 1 -IN 2 +IN 3 V - - 8 7 6 5 J8 PACKAGE 8-LEAD CERDIP VOS TRIM V+ OUT NC OR 3 10k -20V +IN 4 V- 5 W PACKAGE 10-LEAD CERPAC TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS VOS Temp VOS Time IOS IB Input Offset Voltage Average Offset Drift Long-Term Input Offset Voltage Stability Input Offset Current Input Bias Current CONDITIONS NOTES 1 4, 7 2, 4 MIN (Preirradiation) (Note 9) SUBGROUP 4 - 55C TA 125C MIN TYP MAX 300 1.8 2 75 80 1 1 135 150 2, 3 2, 3 SUBGROUP 2, 3 UNITS V V/C V/Month nA nA TA = 25C TYP MAX 100 + -IN 3 - + + 3 4 - 2 7 8 +IN 3 4 V - (CASE) 5 NC 4 4 -20V H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW NC 1 VOS TRIM 2 10 NC 9 8 7 6 VOS TRIM V+ OUT NC + -IN 2 U U W WW U W U UU - 1 RH27C TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER en Input Noise Voltage Input Noise Voltage Density CONDITIONS 0.1Hz to 10Hz fO = 10Hz fO = 30Hz fO = 1000Hz fO = 1000Hz NOTES 4, 5 3 4 4 4, 6 2 4 VCM = 11V VCM = 10V VS = 4V to 18V VS = 4.5V to 18V RL 2k, VO = 10V RL 600, VO = 1V VS = 4V RL = 2k RL = 600 RL = 2k fO = 100kHz 4 4 11 100 94 700 200 11.5 10.0 1.7 5 70 170 1 1 94 1 86 4 300 2, 3 5, 6 2, 3 10.2 MIN (Preirradiation) (Note 9) SUBGROUP - 55C TA 125C MIN TYP MAX SUBGROUP UNITS VP-P nV/Hz nV/Hz nV/Hz pV/Hz G V dB dB dB dB V/mV V/mV V V V/s MHz mW TA = 25C TYP MAX 0.25 8.0 5.6 4.5 0.6 in Input Noise Current Density Input Resistance Common Mode Input Voltage Range CMRR PSRR AVOL Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain VOUT SR GBW ZO PD Maximum Output Voltage Swing Slew Rate Gain-Bandwidth Product Power Dissipation 4 4 7 10.5 5, 6 Open-Loop Output Resistance VO = 0, IO = 0 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS IOS IB Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Common Mode Input Voltage Range CMRR PSRR AVOL VOUT ZO PD Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Maximum Output Voltage Swing Power Dissipation VCM = 11V VS = 4V to 18V RL 2k, VO = 10V RL 10k RL 600 4 CONDITIONS NOTES 1 100 75 80 2 (Typ) 11 100 94 700 11.5 10.0 70 (Typ) 170 (Postirradiation) (Note 10) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 130 75 80 2 (Typ) 11 100 94 700 11.5 10.0 70 (Typ) 170 180 90 125 2 (Typ) 11 97 92 700 11.5 10.0 70 (Typ) 170 280 120 200 2 (Typ) 11 94 90 700 11.5 10.0 70 (Typ) 170 400 180 400 2 (Typ) 11 90 86 400 11.5 10.0 70 (Typ) 170 V nA nA G V dB dB V/mV V V mW Open-Loop Output Resistance VO = 0, IO = 0 2 RH27C TABLE 1A: ELECTRICAL CHARACTERISTICS Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Long-term input offset voltage stability refers to the averaged trend line of offset voltage vs time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5V. Refer to the typical performance curve. Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifications unnulled or when nulled with a pot having a range 8k to 20k. Note 8: The RH27C's inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds 0.7V, the input current should be limited to 25mA. Note 9: VS = 15V, VCM = 0V unless otherwise noted. Note 10: TA = 25C, VS = 15V, VCM = 0V, unless otherwise noted. TOTAL DOSE BIAS CIRCUIT 10k 15V -1F 8V TYPICAL PERFOR A CE CHARACTERISTICS Positive Slew Rate 4 VS = 15V RL = 2k 3 4 VS = 15V RL = 2k NEGATIVE SLEW RATE (V/s) POSITIVE SLEW RATE (V/s) 2 1 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH27C * TPC01 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. + -15V -1F 10k - UW Negative Slew Rate 3 2 1 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH27C * TPC02 3 RH27C TYPICAL PERFOR A CE CHARACTERISTICS Input Offset Voltage 150 100 VS = 15V VCM = 0V 170 160 INPUT OFFSET VOLTAGE (V) INPUT BIAS CURRENT (nA) OPEN-LOOP GAIN (dB) 50 0 -50 -100 -150 -200 1 100 TOTAL DOSE KRAD (Si) 10 1000 RH27C * TPC03 Common Mode Rejection Ratio 170 COMMON MODE REJECTION RATIO (dB) 160 150 140 130 120 110 100 1 POWER SUPPLY REJECTION RATIO (dB) VS = 15V VCM = 11V INPUT OFFSET CURRENT (nA) 100 TOTAL DOSE KRAD (Si) 10 RH27C * TPC06 TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3,4,5,6,7 1,2,3,4,5,6,7 1 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507q TELEX: 499-3977 q www.linear-tech.com q UW UW 1000 Open-Loop Gain VS = 15V RL = 2k VOUT = 10V 350 300 250 200 150 100 50 0 1 100 TOTAL DOSE KRAD (Si) 10 1000 RH27C * TPC04 Input Bias Current VS = 15V VCM = 0V 150 140 130 120 110 100 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH27C * TPC05 Input Offset Current 75 VS = 15V VCM = 0V 140 130 120 110 100 90 80 70 Power Supply Rejection Ratio VS = 4V TO 18V 50 25 0 -25 -50 1 100 10 TOTAL DOSE KRAD (Si) 1000 RH27C * TPC07 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH27C * TPC08 I.D. No. 66-10-0155 Rev. C 0398 RH27Cc LT/HP 0398 100 REV C * PRINTED IN USA (c) LINEAR TECHNOLOGY CORPORATION 1993 |
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