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RF2172
0
Typical Applications * BluetoothTM PA * 2.4GHz to 2.5GHz ISM Band Systems * 902MHz to 928MHz ISM Band Systems Product Description
The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm QFN. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port.
BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed to RF Micro Devices, Inc.
0.10 C B
-B-
ISM BAND 3.6V, 250mW AMP WITH ANALOG GAIN CONTROL
* 3.6V Spread-Spectrum Cordless Phones * Portable Battery-Powered Equipment * Spread-Spectrum Systems
4.00
0.10 C B
2 PLCS
3.75
2 PLCS
2.00 0.80
TYP
2 A
1.60
2 PLCS
3.75 0.75 0.50
INDEX AREA Dimensions in mm.
1.50
SQ.
4.00
0.10 C A
2 PLCS
0.45 0.28 3.20
2 PLCS
2.00
0.10 C A
2 PLCS
Shaded pin is lead 1.
12 MAX 0.05 0.00
0.10 M C A B
1.00 0.90 0.75 0.65
C
0.05
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: QFN, 16-Pin, 4x4
Features * 23.5dBm Typical Output Power * 0dB to 28dB Variable Gain * 45% Efficiency at Max Output * On-Board Power Down Mode * 2.4GHz to 2.5GHz Operation * 902MHz to 928MHz Operation
GND
GND
GND 14
1 GND 2 RF IN 3 GND 4 5 GND
16
15
13 12 RF OUT 11 RF OUT
Bias 6 VPD 7 APC 8 GND
GND 10 GND 9 GND
VCC
Ordering Information
ISM Band 3.6V, 250mW Amp with Analog Gain Control RF2172PCBA411 Fully Assembled Evaluation Board 2.4 to 2.5GHz RF2172PCBA410 Fully Assembled Evaluation Board 908 to 928MHz RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com RF2172
Functional Block Diagram
Rev A11 030729
2-1
RF2172
Absolute Maximum Ratings Parameter
Supply Voltage (RF off) APC Current (Maximum) Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature
Rating
-0.5 to +6.0 +10 -0.5 to +6.0 +10 -40 to +85 -55 to +155
Unit
VDC mA VDC dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range Input Impedance Input VSWR Output Load VSWR
Specification Min. Typ. Max.
500 to 2500 50 1.8:1 <10:1 <6:1 2.4 to 2.5 +23.5 45 -25 -45 -40 -50 20-j4.5 0 to VCC
Unit
MHz
Condition
T=25C, V CC =3.6V, V PD =3.6V, VAPC =2.5V
2.45GHz Operation
Operating Frequency Maximum Output Power Total Efficiency Reverse Isolation Second Harmonic Third Harmonic All Other Spurious Output Load Impedance Gain Control Voltage High Gain Low Gain 22 24.5 GHz dBm % dB dBc dBc dBc
Without Input Match 0Present to part V dB dB MHz dBm % dB dBc dBc dBc V dB/V dB V mA 65 10 mA A mA mA VAPC =3.6V, V CC =3.6V, PIN =0dBm VAPC =0V, V CC =3.6V, PIN =0dBm Freq=902MHz to 928MHz, PIN =-3.0dBm
+22 -10 902 to 928 +24 58 -35 -40 -40 -50 20-j1.6 0 to VCC 20 0 to 28 3.6 145 35 2.8 4.5 2.25
902MHz Operation
Operating Frequency Maximum Output Power Total Efficiency Reverse Isolation Second Harmonic Third Harmonic All Other Spurious Output Load Impedence Gain Control Voltage Gain Control Slope Gain
Present to part
Power Supply
Power Supply Voltage Power Supply Current Idle Current V CC =3.6V, VAPC =3.6V, PIN =-3dBm, V PD =3.6V V PD =3.6V, VAPC =3.6V, RF PIN <-30dBm V CC =3.6V, VAPC =0V, V PD =0V total ICC V CC =3.6V, V PD =3.6V into PD pin V CC =3.0V, V PD =3.0V into PD pin
Power Down Current
I(PD) I(PD)
2-2
Rev A11 030729
RF2172
Pin 1 2 3 4 5 6 Function GND GND RF IN GND GND VPD Description
Ground connection. For best performance, keep traces physically short and connect immediately to the ground plane. Ground connection for the driver stage. For best performance, keep traces physically short and connect immediately to the ground plane. RF input. This is a 50 input. No external matching is needed. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 1. See pin 1. Power down pin. When this pin is 0V, the device will be in power down mode, dissipating minimum DC power. This pin also serves as the VCC supply pin for the bias circuitry. VPD should be at the supply voltage when the part is not in power down mode. Analog power control. Output power varies as a function of the voltage on this pin. See graph. This pin must be driven through a series resistor with a voltage between 0V and VCC. Series resistor determines dynamic range of power control. See plot "POUT versus Gain Control versus Gain Control Resistor".
Interface Schematic
See pin 15.
7
APC
APC Bias Network RF IN
1st Stage
8 9 10 11 12
GND GND GND RF OUT RF OUT
See pin 1. See pin 1. See pin 1. RF output. An external matching network is required to provide the opti- See pin 15. mum load impedance at this pin. RF output and power supply for the output stage. Bias voltage for the See pin 15. output stage is provided through this pin. A shunt cap resonating with the bond wire inductance at 2xf0 can also be used at this pin to provide a second harmonic trap. See pin 1. See pin 1. Power supply for driver stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage. Refer to the application schematic for the proper configuration. Note: Position and value of the components are important.
VCC
13 14 15
GND GND VCC
Inductor Pin 15 Bond Wire RF IN 1st Stage
External Cap
GND RF OUT RF OUT 2nd Stage
16 Pkg Base
GND GND
See pin 1. Ground connection for the output stage. This pad should be connected to the groundplane by vias directly under the device. A short path is required to obtain optimum performance, as well as provide a good thermal path to the PCB for maximum heat dissipation.
Rev A11 030729
2-3
RF2172
Application Schematic - 915MHz
VCC
22 nF
3.9 nH
1 2 22 nF RF IN 3 4 5
16
15
14
13 12
4 pF
22 nF
VCC
3.9 nH 11 Bias 6 7 8 10 9 2.7 nH 4 pF 22 nF RF OUT
RAPC 3 k
22 nF
22 nF
VPD VAPC
Application Schematic - 2.45GHz
VCC 22 nF 4 pF
10
1 2 22 nF RF IN 0.5 pF 3 4 5
16
15
14
13 12 1.5 nH 11
22 nF
VCC
22 nF RF OUT 1.5 pF
Bias 6 7 8
10 9
5 pF
5 pF
VCC
10
200 VAPC
22 nF
22 nF
2-4
Rev A11 030729
RF2172
Evaluation Board Schematic - 915MHz
VCC2 P1-1 22 nF L1 3.9 nH R1* OPEN P1 1 2 P1-3 3 CON3 VCC2 GND VCC3 P2-3 P2-1 P2 1 2 3 CON3 VAPC GND VCC1
1 C2 22 nF 2 3 4 5
16
15
14
13 12 11
C7 4 pF L3 3.9 nH L2 2.7 nH
C8 22 nF VCC3 C6 22 nF C5 4 pF 50 strip
J1 RF IN
50 strip
Bias 6 7 8
10 9
J2 RF OUT
R2 3 k VCC1 C3 22 nF C4 22 nF VAPC
Rev A11 030729
2-5
RF2172
Evaluation Board Schematic - 2.45GHz
VCC2 P1-1 C11 22 nF C10 4 pF 1 C2 22 nF C1 0.5 pF 2 3 4 5 C3 5 pF R1 10 VCC1 C4 22 nF C5 22 nF 6 Bias 7 8 C6 5 pF R2 200 VAPC 16 15 14 13 12 11 10 9 L1 1.5 nH VCC3 C9 22 nF C8 22 nF C7 1.5 pF 50 strip R3 10 P1 1 2 P1-3 3 CON3 VCC2 GND VCC3 P2-3 P2-1 P2 1 2 3 CON3 VAPC GND VCC1
J1 RF IN
50 strip
J2 RF OUT
2172401-
2-6
Rev A11 030729
RF2172
Evaluation Board Layout - 915MHz Board Size 0.80" x 0.85"
Board Thickness 0.031", Board Material FR-4
Evaluation Board Layout - 2.45GHz Board Size 0.800" x 0.924"
Board Thickness 0.031", Board Material FR-4
Rev A11 030729
2-7
RF2172
30.0
POUT versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz
Pout -40 Pout 25 Pout 85
30.0
POUT versus PIN VCC=3.0V, VAPC=3.0V, Freq=915MHz
Pout -40 Pout 25 Pout 85
25.0
25.0
20.0
20.0
15.0
15.0
POUT (dBm)
10.0
POUT (dBm)
-20.0 -15.0 -10.0 -5.0 0.0 5.0
10.0
5.0
5.0
0.0
0.0
-5.0
-5.0
-10.0 -25.0
-10.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN (dBm)
PIN (dBm)
70.0
Efficiency versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz
Eff (%) -40
0.18
ICC versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz
Icc -40 Icc 25 Icc 85
60.0
Eff (%) 25 Eff (%) 85
0.16
0.14 50.0
Efficiency (%)
0.12
ICC (A)
-20.0 -15.0 -10.0 -5.0 0.0 5.0
40.0
0.10
30.0 0.08 20.0 0.06 10.0
0.04
0.0 -25.0
0.02 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
PIN (dBm)
PIN (dBm)
30.0
POUT versus VAPC VCC=3.6V, Freq=915MHz, PIN=-3dBm
Pout -40 Pout 25 Pout 85
0.16 0.15 0.14 0.13 0.12
ICC versus VAPC VCC=3.6V, Freq=915MHz, PIN=-3dBm
Icc -40 Icc 25 Icc 85
25.0
20.0 0.11
15.0
POUT (dBm)
ICC (A)
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
0.10 0.09 0.08
10.0
5.0
0.07 0.06
0.0 0.05 -5.0 0.04 0.03 -10.0 0.02 0.00 0.30 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60
VAPC (V)
VAPC (V)
2-8
Rev A11 030729
RF2172
0.6
IAPC versus VAPC VCC=3.6V, VPD=3.6V, Freq=915MHz
Iapc[mA] -40
30.0
POUT versus Gain Control versus RAPC VCC=3.6V, PIN=-3dBm, Freq=915MHz
Rapc (3k) Rapc (3.5k) Rapc (4k)
0.4
Iapc[mA] 25 Iapc[mA] 85
25.0
20.0 0.2 15.0 0.0
POUT (dBm)
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
IAPC (mA)
10.0
-0.2
5.0 -0.4 0.0 -0.6
-5.0
-0.8
-10.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
VAPC (V)
VAPC (V)
30.0
POUT versus PIN versus RAPC VCC=3.6V, VAPC=3.6V, Freq=915MHz
Rapc (3k)
30.0
POUT versus PIN VCC = VAPC = 3.6V, Freq = 2.45 GHz
Pout@-40C Pout@+25C Pout@+85C
25.0
Rapc (3.5k) Rapc (4k)
25.0
20.0 20.0
15.0
POUT (dBm)
-20.0 -15.0 -10.0 -5.0 0.0 5.0
15.0
POUT (dBm)
10.0
10.0
5.0 5.0 0.0 0.0
-5.0
-5.0 -25.0
-10.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN (dBm)
PIN (dBm) ICC versus PIN VCC = VAPC = 3.6 V, Freq = 2.45 GHz
Icc@-40C Icc@+25C 0.20 Icc@+85C
50.0 45.0 40.0 35.0
Efficiency versus PIN VCC = VAPC = 3.6 V, Freq = 2.45 GHz
Eff@-40C Eff@+25C Eff@+85C
0.25
Efficiency (%)
30.0 25.0 20.0 15.0 10.0 5.0 0.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
0.15
ICC (A)
0.10 0.05 0.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
PIN (dBm)
PIN (dBm)
Rev A11 030729
2-9
RF2172
25.0
POUT versus VAPC VCC = 3.6 V, Freq = 2.45 GHz, PIN = 0 dBm
Pout@-40C Pout@+25C Pout@+85C
0.18 0.16 0.14 0.12
POUT versus VAPC VCC = 3.6 V, Freq = 2.45 GHz, PIN = 0 dBm
Icc@-40C Icc@+25C Icc@+85C
20.0
15.0
POUT (dBm)
POUT (dBm)
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
10.0
0.10 0.08 0.06
5.0
0.0
-5.0
0.04 0.02 0.00 0.00 0.40 0.80 1.20 1.60 2.00 2.40 2.80 3.20 3.60
-10.0
-15.0
VAPC(V)
VAPC (V) POUT versus PIN VCC - VAPC = 3.0 V, Freq = 2.45 GHz
Pout@-40C Pout@+25C Pout@+85C 15.0
30.0 20.0
f0, 2f0 over Frequency VCC = VAPC = 3.6 V, PIN = 0 dBm
0.0
25.0
-10.0 10.0 0.0 -20.0
20.0
POUT (dBm)
-10.0 -20.0 -30.0 -40.0
f0@ -40C f0@ +85C 2f0@ +25C
f0@ +25C 2f0@ -40C 2f0@ +85C -40.0 -30.0
2f0 (dBc)
f0 (dBm)
10.0
5.0
0.0
-50.0 -50.0 -60.0 2400.0 2420.0 2440.0 2460.0 2480.0 -60.0 2500.0
-5.0
-10.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
Frequency (MHz)
PIN (dBm) Efficiency versus PIN VCC = VAPC = 3.0 V, Freq = 2.45 GHz
Eff@-40C 45.0 40.0 35.0 Eff@+25C Eff@+85C
0.16
ICC versus PIN VCC = VAPC = 3.0 V, Freq = 2.45 GHz
Icc@-40C Icc@+25C Icc@+85C
50.0
0.14
0.12
Efficiency (%)
-20.00 -15.00 -10.00 -5.00 0.00 5.00
0.10
30.0 25.0 20.0 15.0
ICC (A)
0.08
0.06
0.04 10.0 0.02 5.0 0.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
0.00 -25.00
PIN (dBm)
PIN (dBm)
2-10
Rev A11 030729
RF2172
25.0
POUT versus VAPC VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm
Pout@-40C Pout@+25C Pout@+85C
0.14
ICC versus VAPC VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm
Icc@-40C Icc@+25C Icc@+85C
20.0
0.12
15.0 0.10
POUT (dBm)
10.0
5.0
ICC (A)
0.08
0.06
0.0 0.04 -5.0 0.02
-10.0
-15.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.00 0.00 0.50 1.00 1.50 2.00 2.50 3.00
VAPC (V) POUT versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz
Pout(100) Pout(200) Pout(300) Pout(400)
VAPC (V) ICC versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz
Icc(100) Icc(200) Icc(300) 0.20 Icc(400)
30.0
0.25
25.0
20.0
POUT (dBm)
15.0
0.15
10.0
ICC (A)
0.10 0.05 0.00 -20.0 -15.0 -10.0 -5.0 0.0 5.0 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
5.0
0.0
-5.0
-10.0 -25.0
PIN (dBm) Efficiency versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz
Eff(100) 45.0 40.0 35.0 Eff(200) Eff(300) Eff(400) 0.008 0.010
PIN (dBm) IAPC versus VAPC over R2 VCC = 3.6 V, PIN = 0 dBm, Freq = 2450 MHz
Iapc(100) Iapc(200) Iapc(300) Iapc(400)
50.0
0.012
Efficiency (%)
30.0
0.006
IAPC (A)
25.0 20.0 15.0
0.004
0.002
0.000 10.0 5.0 0.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 -0.002
-0.004 0.000 0.400 0.800 1.200 1.600 2.000 2.400 2.800 3.200 3.600
PIN (dBm)
VAPC (V)
Rev A11 030729
2-11
RF2172
PCB Design Requirements
PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Pattern
A = 0.51 x 0.89 (mm) Typ. B = 0.89 x 0.51 (mm) Typ. C = 1.52 (mm) Sq.
Dimensions in mm.
3.20 Typ. 0.81 Typ.
Pin 1
A
A
A
A
A
1.73 Typ. 0.81 Typ.
B B B C
B 0.81 Typ. B B 1.60 Typ.
0.94 Typ. A A A A A
1.60 Typ. 1.73 Typ.
Figure 1. PCB Metal Land Pattern (Top View)
2-12
Rev A11 030729
RF2172
PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier.
A = 0.51 x 0.89 (mm) Typ. B = 0.89 x 0.51 (mm) Typ. C = 1.52 (mm) Sq.
Dimensions in mm.
3.20 Typ. 0.81 Typ.
Pin 1
A 1.73 Typ. 0.81 Typ. B B 0.94 Typ. A
A
A
A
A
B C
B 0.81 Typ. B B 1.60 Typ.
A
A
A
A
1.60 Typ. 1.73 Typ.
Figure 2. PCB Solder Mask (Top View) Thermal Pad and Via Design The PCB metal land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results.
Rev A11 030729
2-13
RF2172
2-14
Rev A11 030729

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